DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34 FEATURES PINNING • High current (max. 2 A) PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-current switching, e.g. inverters and switching regulators. 1 handbook, halfpage DESCRIPTION 3 2 NPN switching transistor in a TO-39 metal package. 2 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 120 V VCEO collector-emitter voltage open base − 60 V IC collector current (DC) − 2 A Ptot total power dissipation Tcase ≤ 25 °C − 5 W hFE DC current gain IC = 2 A; VCE = 2 V 40 150 fT transition frequency IC = 0.5 A; VCE = 5 V; f = 100 MHz 70 − MHz toff turn-off time ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A − 1.2 µs 1997 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor BFX34 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 120 V VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 2 A ICM peak collector current − 5 A IBM peak base current − 1.5 A Ptot total power dissipation Tcase ≤ 25 °C − 5 W Tamb ≤ 25 °C − 0.87 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 200 K/W Rth j-c thermal resistance from junction to case 35 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 60 V − − 10 µA emitter cut-off current IC = 0; VEB = 4 V − − 10 µA DC current gain IC = 1 A; VCE = 2 V − 130 − IC = 1.5 A; VCE = 0.6 V − 60 − ICBO collector cut-off current IEBO hFE IC = 2 A; VCE = 2 V 40 110 150 VCEsat collector-emitter saturation voltage IC = 5 A; IB = 0.5 A − 0.77 1 V VBEsat base-emitter saturation voltage IC = 5 A; IB = 0.5 A − 1.43 1.8 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 36 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 440 − pF fT transition frequency IC = 0.5 A; VCE = 5 V; f = 100 MHz 70 100 − MHz ICon = 5 A; IBon = 0.5 A; IBoff = − 0.5 A − 0.2 0.6 µs − 0.34 1.2 µs Switching times (between 10% and 90% levels) ton turn-on time toff turn-off time 1997 Apr 22 3 Philips Semiconductors Product specification NPN switching transistor BFX34 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 Apr 22 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 4 Philips Semiconductors Product specification NPN switching transistor BFX34 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Apr 22 5 Philips Semiconductors Product specification NPN switching transistor BFX34 NOTES 1997 Apr 22 6 Philips Semiconductors Product specification NPN switching transistor BFX34 NOTES 1997 Apr 22 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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