PHILIPS BFX34

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFX34
NPN switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specification
NPN switching transistor
BFX34
FEATURES
PINNING
• High current (max. 2 A)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• High-current switching, e.g. inverters and switching
regulators.
1
handbook, halfpage
DESCRIPTION
3
2
NPN switching transistor in a TO-39 metal package.
2
3
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
120
V
VCEO
collector-emitter voltage
open base
−
60
V
IC
collector current (DC)
−
2
A
Ptot
total power dissipation
Tcase ≤ 25 °C
−
5
W
hFE
DC current gain
IC = 2 A; VCE = 2 V
40
150
fT
transition frequency
IC = 0.5 A; VCE = 5 V; f = 100 MHz
70
−
MHz
toff
turn-off time
ICon = 5 A; IBon = 0.5 A;
IBoff = −0.5 A
−
1.2
µs
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN switching transistor
BFX34
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
120
V
VCEO
collector-emitter voltage
open base
−
60
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
2
A
ICM
peak collector current
−
5
A
IBM
peak base current
−
1.5
A
Ptot
total power dissipation
Tcase ≤ 25 °C
−
5
W
Tamb ≤ 25 °C
−
0.87
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
200
K/W
Rth j-c
thermal resistance from junction to case
35
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 60 V
−
−
10
µA
emitter cut-off current
IC = 0; VEB = 4 V
−
−
10
µA
DC current gain
IC = 1 A; VCE = 2 V
−
130
−
IC = 1.5 A; VCE = 0.6 V
−
60
−
ICBO
collector cut-off current
IEBO
hFE
IC = 2 A; VCE = 2 V
40
110
150
VCEsat
collector-emitter saturation voltage
IC = 5 A; IB = 0.5 A
−
0.77
1
V
VBEsat
base-emitter saturation voltage
IC = 5 A; IB = 0.5 A
−
1.43
1.8
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
36
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
−
440
−
pF
fT
transition frequency
IC = 0.5 A; VCE = 5 V;
f = 100 MHz
70
100
−
MHz
ICon = 5 A; IBon = 0.5 A;
IBoff = − 0.5 A
−
0.2
0.6
µs
−
0.34
1.2
µs
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN switching transistor
BFX34
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 Apr 22
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
4
Philips Semiconductors
Product specification
NPN switching transistor
BFX34
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 22
5
Philips Semiconductors
Product specification
NPN switching transistor
BFX34
NOTES
1997 Apr 22
6
Philips Semiconductors
Product specification
NPN switching transistor
BFX34
NOTES
1997 Apr 22
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 22
Document order number:
9397 750 01951