DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL • Interchangeability of drain and source connections DESCRIPTION 1 g gate • Low RDSon at zero gate voltage (<8 Ω for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. s MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS V J108 −3 −10 V J109 −2 −6 V −0.5 −4 V 80 − mA VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 5 V J110 drain current VGS = 0; VDS = 5 V J108 1996 Jul 30 UNIT ±25 drain-source voltage Ptot MAX. − VDS IDSS MIN. J109 40 − mA J110 10 − mA − 400 mW total power dissipation up to Tamb = 50 °C 2 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V VGSO gate-source voltage open drain − −25 V VGDO gate-drain voltage open source − −25 V IG forward gate current (DC) − 50 mA Ptot total power dissipation up to Tamb = 50 °C − 400 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE UNIT 250 K/W STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 VGSoff gate-source cut-off voltage ID = 1 µA; VDS = 5 V IDSS MIN. − TYP. − MAX. −25 UNIT V V J108 −3 − −10 V J109 −2 − −6 V J110 −0.5 − −4 V J108 80 − − mA J109 40 − − mA J110 10 − − mA drain current VGS = 0; VDS = 15 V IGSS gate leakage current VGS = −15 V; VDS = 0 − − −3 nA IDSX drain-source cut-off current VGS = −10 V; VDS = 5 V − − 3 nA RDSon drain-source on-state resistance VGS = 0; VDS = 100 mV J108 − − 8 Ω J109 − − 12 Ω J110 − − 18 Ω 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 DYNAMIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL Cis PARAMETER CONDITIONS input capacitance reverse transfer capacitance Crs TYP. MAX. UNIT VDS = 0; VGS = −10 V; f = 1 MHz 15 30 pF VDS = 0; VGS = 0; f = 1 MHz; Tamb = 25 °C 50 85 pF VDS = 0; VGS = −10 V; f = 1 MHz 8 15 pF Switching times; see Fig.2 td delay time 2 − ns ton turn-on time 4 − ns ts storage time 4 − ns toff turn-off time 6 − ns note 1 Note 1. Test conditions for switching times are as follows: VDD = 1.5 V; VGS = 0 to VGSoff (all types) VGSoff = −12 V; RL = 100 Ω (J108) VGSoff = −7 V; RL = 100 Ω (J109) VGSoff = −5 V; RL = 100 Ω (J110). 0.1 µF 50 Ω handbook, halfpage VDD 10 nF 10 µF RL DUT SAMPLING SCOPE 50 Ω 50 Ω MGE773 Fig.2 Switching circuit. 1996 Jul 30 4 Philips Semiconductors Product specification N-channel silicon junction FETs handbook, full pagewidth VGS = 0 V J108; J109; J110 10% Vi VGS off 90% toff ts ton td tf tr 90% Vo 10% MGE774 Fig.3 Input and output waveforms. 1996 Jul 30 5 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 PACKAGE OUTLINE andbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 5.2 max 12.7 min 0.48 0.40 1 4.8 max 2.54 2 3 0.66 0.56 2.0 max Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. Fig.4 TO-92 (SOT54). 1996 Jul 30 6 (1) MBC014 - 1 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 7