DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. • Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS d handbook, halfpage • UHF and VHF applications such as: 4 3 – UHF/VHF television tuners g 2 g1 – Professional communication equipment • Especially intended for use in pre-amplifiers in CATV tuners with a large tuning range up to 500 MHz. 1 2 s,b PINNING Top view PIN SYMBOL 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 MAM039 DESCRIPTION source Marking code: MKp. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 30 mA Ptot total power dissipation − 200 mW Tj junction temperature up to Tamb = 60 °C − 150 °C 18 − mS input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 2.5 − pF Crs feedback capacitance f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 25 − fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 15 V; VG2-S = 4 V − dB Y fs Cig1-s April 1991 transfer admittance f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 2 1 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current (DC) − 30 mA ID(AV) average drain current − 30 mA IG1-S gate 1-source current − ±10 mA IG2-S gate 2-source current − ±10 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Tamb = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to ambient Rth j-a in free air; note 1 Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. MGE792 200 handbook, halfpage Ptot (mW) 100 0 0 100 Tamb (°C) 200 Fig.2 Power derating curve. April 1991 3 VALUE UNIT 460 K/W Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER IG1-SS gate 1 cut-off current IG2-SS gate 2 cut-off current CONDITIONS VG1-S = ±5 V; VG2-S = VDS = 0 MIN. − MAX. ±50 UNIT nA VG2-S = ±5 V; VG1-S = VDS = 0 − ±50 nA V(BR)G1-SS gate 1-source breakdown voltage IG1-SS = ±10 mA; VG2-S = VDS = 0 ±6 ±20 V V(BR)G2-SS gate 2-source breakdown voltage IG2-SS = ±10 mA; VG1-S = VDS = 0 ±6 ±20 V V(P)G1-S gate 1-source cut-off voltage ID = 20 µA; VDS = 15 V; VG2-S = 4 V − −2.5 V V(P)G2-S gate 2-source cut-off voltage ID = 20 µA; VDS = 15 V; VG1-S = 0 − −2 V IDSS drain-source cut-off voltage VDS = 15 V; VG2-S = 4 V; VG1-S = 0 2 20 mA DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 °C. SYMBOL Y fs PARAMETER CONDITIONS MIN. TYP. UNIT transfer admittance f = 1 kHz 15 18 mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.5 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.2 pF Crs feedback capacitance f = 1 MHz − 25 fF Cos output capacitance f = 1 MHz − 1 pF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt − 1 dB Gp power gain f = 200 MHz; GS = 2 mS; BS = BSopt; GL = 0.5 mS; BL = BLopt − 25 dB April 1991 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 PACKAGE OUTLINE handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. See also Soldering recommendations. Fig.3 SOT143. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 5