DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. PIN SYMBOL 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION source d 3 4 g2 DESCRIPTION g1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. 2 1 s,b Top view MAM198 CAUTION Marking code: MD. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 12 V ID drain current − − 40 mA Ptot total power dissipation − − 300 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 800 MHz − 1.5 2.5 dB 1995 Apr 25 2 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 40 mA IG1 gate 1 current − ±10 mA IG2 gate 2 current − ±10 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C up to Tamb = 45 °C; see Fig.2; note 1 Note 1. Device mounted on a printed-circuit board. MLD154 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb ( oC) Fig.2 Power derating curve. 1995 Apr 25 3 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 350 K/W Rth j-s thermal resistance from junction to soldering point Ts = 87 °C; note 2 210 K/W Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8 − 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8 − 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 µA − − −2 V V(P)G2-S gate 2-source cut-off voltage VG1-S = 4 V; VDS = 8 V; ID = 20 µA − − −1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3 15 27 mA IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V − − 50 nA IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V − − 50 nA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj = 25 °C 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF Cos drain-source capacitance f = 1 MHz 1.2 1.7 2.2 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt − 0.6 1.2 dB f = 800 MHz; GS = GSopt; BS = BSopt − 1.5 2.5 dB 1995 Apr 25 4 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR MRC281 40 handbook, halfpage ID (mA) MRC282 30 handbook, halfpage VG2-S = 4 V VG1-S = 0.3 V ID (mA) 3V 30 0.2 V 2V 20 0.1 V 1.5 V 20 1V 0V 10 –0.1 V 0.5 V 10 –0.2 V –0.3 V 0V 0 –0.6 0 –0.4 –0.2 0 0.2 0.4 0.6 VG1-S (V) VDS = 8 V. Tj = 25 °C. 0 4 8 12 16 VDS (V) VG2-S = 4 V. Tj = 25 °C. Fig.3 Transfer characteristics; typical values. Fig.4 Output characteristics; typical values. MRC280 50 Yfs (mS) 40 MRC276 60 4V 3V 2V Yfs (mS) 1.5 V 40 30 1V 20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 40 25 I D (mA) 0 40 80 120 160 T j (o C) VDS = 8 V. Tj = 25 °C. Fig.5 Forward transfer admittance as a function of drain current; typical values. 1995 Apr 25 Fig.6 5 Forward transfer admittance as a function of junction temperature; typical values. Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR PACKAGE OUTLINE 1.00 max 0.2 M A 0.1 max 0.4 0.2 0.2 M B 0.2 3 4 A 1.35 1.15 2.2 2.0 2 0.3 0.1 1 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.7 SOT343R. 1995 Apr 25 6 MSB367 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 25 7