INFINEON BSO303PH

BSO303P H
OptiMOS®-P Small-Signal-Transistor
Product Summary
Features
V DS
• Dual P-Channel in SO8
R DS(on),max
• Enhancement mode
• Logic level
-30
V
V GS =-10V
21
mΩ
V GS =-4.5V
32
ID
-8.2
A
• 150°C operating temperature
• Qualified according JEDEC for target applications
SO 8
• Halogen-free according to IEC61249-2-21
Type
Package
BSO303P H
PG-DSO- 8
Marking
303P
Lead free
Halogen free
Yes
Packing
Yes
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current 1)
ID
steady state
T C=25 °C
-8.2
-7.0
T C=70 °C
-6.6
-5.8
I D,pulse
T C=25 °C
Avalanche energy, single pulse
E AS
I D=-8.2 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
JESD22-A114 HBM
A
-32.8
97
mJ
±20
V
2
W
-55 ... 150
°C
1B (500V - 1kV)
260 °C
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
Rev. 1.3
Unit
10 secs
Pulsed drain current2)
ESD class
Value
Symbol Conditions
page 1
2010-02-10
BSO303P H
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
50
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJS
SMD version, device on PCB:
R thJA
minimal footprint, t<
10s
110
minimal footprint,
steady state
150
6 cm2 cooling area1)
t<10s
-
-
62.5
6 cm2 cooling area1),
steady state
-
-
80
-30
-
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250µA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-100 µA
-1
-1.5
-2
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-30 V, V GS=0 V,
T j=150 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5 V, I D=-6.6 A
-
25
32
mW
V GS=-10 V, I D=-8.2 A
-
17
21
|V DS|>2|I D|R DS(on)max,
I D=-6.6 A
11
27
-
Transconductance
g fs
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t≤10 sec.
2.)
Rev. 1.3
See figure3 for more detailed information
page 2
2010-02-10
BSO303P H
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1785
2678
-
510
765
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
425
638
Turn-on delay time
t d(on)
-
11
17
Rise time
tr
-
13
20
Turn-off delay time
t d(off)
-
55
83
Fall time
tf
-
39
59
Gate to source charge
Q gs
-
-5
-6
Gate to drain charge
Q gd
-
-14
-20
Gate charge total
Qg
-
-36
-49
Gate plateau voltage
V plateau
-
-2.7
-
V
-
-
-2.2
A
-
-
-32.8
V GS=0 V, V DS=-25 V,
f =1 MHz
V DD=-15 V, V GS=10 V, I D=-1 A, R G=6 Ω
pF
ns
Gate Charge Characteristics 3)
V DD=-24 V, I D=-8.2 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode direct current, pulsed
I SM
Diode forward voltage
V SD
V GS=0 V, I F=-8.2 A,
T j=25 °C
-
-0.9
-1.3
V
Reverse recovery time
t rr
V R=-15 V, I F=|I S|,
di F/dt =100 A/µs
-
24
36
ns
Reverse recovery charge
Q rr
-
13
19
nC
Rev. 1.3
T C=25 °C
page 3
2010-02-10
BSO303P H
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); |V GS|≥10 V
2.5
8
2
6
-I D [A]
P tot [W]
1.5
4
1
2
0.5
0
0
0
40
80
120
0
160
40
80
T A [°C]
120
160
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
102
1000
100
0.5
102
100
101
10 µs
0.2
10
0.1
100 µs
0.05
10
1 ms
10 ms
0
0.02
100
1
0.01
1
limited by on-state
resistance
10-1
0.1
10-2
0.01
0.1
10
Rev. 1.3
Z thJS [K/W]
10
-I D [A]
101
DC
1
-1
10
10
0
-V DS [V]
10
100
1
10
2
page 4
single pulse
10-1
0.1
10-2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10-5
10-4
10-3
10-2
10-1
100
t p [s]
10
101
2010-02-10
BSO303P H
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
70
60
-6 V
-10 V
-4.5 V
60
-4.0 V
50
-5 V
50
R DS(on) [mΩ]
-I D [A]
40
-3.5 V
30
-3 V
40
-3.5 V
30
-4 V
-4.5 V
20
-5 V
-6 V
20
-3.0 V
10
-8 V
-10 V
10
-2.5 V
0
0
0
2
4
6
8
0
10
10
-V DS [V]
20
30
40
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
40
30
20
g fs [S]
-I D [A]
30
20
10
10
150 °C
25 °C
0
0
0
1
2
3
4
0
Rev. 1.3
10
20
30
-I D [A]
-V GS [V]
page 5
2010-02-10
BSO303P H
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-8.2 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-100 µA
30
2.5
28
26
2
24
22
-V GS(th) [V]
R DS(on) [mΩ]
max.
98 %
20
18
16
1.5
typ.
1
min.
typ.
14
0.5
12
10
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
102
10000
150 °C, 98%
10
1
25 °C, typ
103
I F [A]
C [pF]
Ciss
1000
150 °C, typ
Coss
100
Crss
25 °C, 98%
102
10-1
100
0
8
16
24
0
Rev. 1.3
0.5
1
1.5
2
2.5
3
-V SD [V]
-V DS [V]
page 6
2010-02-10
BSO303P H
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-8.2 A pulsed
parameter: T j(start)
parameter: V DD
102
10
8
-6 V
-15 V
101
-V GS [V]
-I AV [A]
6
25 °C
-24 V
4
100 °C
125 °C
2
100
0
100
101
102
103
t AV [µs]
0
10
20
30
40
-Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=-250 µA
35
34
33
-V BR(DSS) [V]
32
31
30
29
28
27
26
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.3
page 7
2010-02-10
BSO303P H
Package Outline
PG-DSO-8: Outline
Rev. 1.3
page 8
2010-02-10
BSO303P H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.3
page 9
2010-02-10