BSO303P H OptiMOS®-P Small-Signal-Transistor Product Summary Features V DS • Dual P-Channel in SO8 R DS(on),max • Enhancement mode • Logic level -30 V V GS =-10V 21 mΩ V GS =-4.5V 32 ID -8.2 A • 150°C operating temperature • Qualified according JEDEC for target applications SO 8 • Halogen-free according to IEC61249-2-21 Type Package BSO303P H PG-DSO- 8 Marking 303P Lead free Halogen free Yes Packing Yes dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) ID steady state T C=25 °C -8.2 -7.0 T C=70 °C -6.6 -5.8 I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-8.2 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C JESD22-A114 HBM A -32.8 97 mJ ±20 V 2 W -55 ... 150 °C 1B (500V - 1kV) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.3 Unit 10 secs Pulsed drain current2) ESD class Value Symbol Conditions page 1 2010-02-10 BSO303P H Parameter Values Symbol Conditions Unit min. typ. max. - - 50 Thermal characteristics Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA minimal footprint, t< 10s 110 minimal footprint, steady state 150 6 cm2 cooling area1) t<10s - - 62.5 6 cm2 cooling area1), steady state - - 80 -30 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA Gate threshold voltage V GS(th) V DS=V GS, I D=-100 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-30 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-6.6 A - 25 32 mW V GS=-10 V, I D=-8.2 A - 17 21 |V DS|>2|I D|R DS(on)max, I D=-6.6 A 11 27 - Transconductance g fs S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t≤10 sec. 2.) Rev. 1.3 See figure3 for more detailed information page 2 2010-02-10 BSO303P H Parameter Values Symbol Conditions Unit min. typ. max. - 1785 2678 - 510 765 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 425 638 Turn-on delay time t d(on) - 11 17 Rise time tr - 13 20 Turn-off delay time t d(off) - 55 83 Fall time tf - 39 59 Gate to source charge Q gs - -5 -6 Gate to drain charge Q gd - -14 -20 Gate charge total Qg - -36 -49 Gate plateau voltage V plateau - -2.7 - V - - -2.2 A - - -32.8 V GS=0 V, V DS=-25 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-1 A, R G=6 Ω pF ns Gate Charge Characteristics 3) V DD=-24 V, I D=-8.2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode direct current, pulsed I SM Diode forward voltage V SD V GS=0 V, I F=-8.2 A, T j=25 °C - -0.9 -1.3 V Reverse recovery time t rr V R=-15 V, I F=|I S|, di F/dt =100 A/µs - 24 36 ns Reverse recovery charge Q rr - 13 19 nC Rev. 1.3 T C=25 °C page 3 2010-02-10 BSO303P H 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 2.5 8 2 6 -I D [A] P tot [W] 1.5 4 1 2 0.5 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 1000 100 0.5 102 100 101 10 µs 0.2 10 0.1 100 µs 0.05 10 1 ms 10 ms 0 0.02 100 1 0.01 1 limited by on-state resistance 10-1 0.1 10-2 0.01 0.1 10 Rev. 1.3 Z thJS [K/W] 10 -I D [A] 101 DC 1 -1 10 10 0 -V DS [V] 10 100 1 10 2 page 4 single pulse 10-1 0.1 10-2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] 10 101 2010-02-10 BSO303P H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 70 60 -6 V -10 V -4.5 V 60 -4.0 V 50 -5 V 50 R DS(on) [mΩ] -I D [A] 40 -3.5 V 30 -3 V 40 -3.5 V 30 -4 V -4.5 V 20 -5 V -6 V 20 -3.0 V 10 -8 V -10 V 10 -2.5 V 0 0 0 2 4 6 8 0 10 10 -V DS [V] 20 30 40 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 30 20 g fs [S] -I D [A] 30 20 10 10 150 °C 25 °C 0 0 0 1 2 3 4 0 Rev. 1.3 10 20 30 -I D [A] -V GS [V] page 5 2010-02-10 BSO303P H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-8.2 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-100 µA 30 2.5 28 26 2 24 22 -V GS(th) [V] R DS(on) [mΩ] max. 98 % 20 18 16 1.5 typ. 1 min. typ. 14 0.5 12 10 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 102 10000 150 °C, 98% 10 1 25 °C, typ 103 I F [A] C [pF] Ciss 1000 150 °C, typ Coss 100 Crss 25 °C, 98% 102 10-1 100 0 8 16 24 0 Rev. 1.3 0.5 1 1.5 2 2.5 3 -V SD [V] -V DS [V] page 6 2010-02-10 BSO303P H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-8.2 A pulsed parameter: T j(start) parameter: V DD 102 10 8 -6 V -15 V 101 -V GS [V] -I AV [A] 6 25 °C -24 V 4 100 °C 125 °C 2 100 0 100 101 102 103 t AV [µs] 0 10 20 30 40 -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 35 34 33 -V BR(DSS) [V] 32 31 30 29 28 27 26 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 page 7 2010-02-10 BSO303P H Package Outline PG-DSO-8: Outline Rev. 1.3 page 8 2010-02-10 BSO303P H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 2010-02-10