INFINEON CFY25-20

CFY25
HiRel X-Band GaAs Low Noise / General Purpose MESFET
•
HiRel Discrete and Microwave
Semiconductor
•
For professional pre- and driver-amplifiers
•
For frequencies from 500 MHz to 20 GHz
•
Hermetically sealed microwave package
•
Low noise figure, high gain, moderate power
•
4
3
1
2
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 01 to 05
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY25-P (ql)
Marking
-
Ordering Code Pin Configuration
see below
1
2
3
4
G
S
D
S
Package
Micro-X
CFY25-23 (ql)
CFY25-23P (ql)
CFY25-20 (ql)
CFY25-20P (ql)
CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
Q62703F120
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62703F119
(see order instructions for ordering example)
Semiconductor Group
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Draft D, Sep. 0000
CFY25
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
5
V
Drain-gate voltage
VDG
7
V
Gate-source voltage (reverse / forward)
VGS
- 5... + 0.5
V
Drain current
ID
80
mA
Gate forward current
IG
1.5
mA
RF Input Power, C- and X-Band 1)
PRF,in
+ 17
dBm
Junction temperature
TJ
175
°C
Storage temperature range
Tstg
- 65... + 175
°C
Total power dissipation 2)
Ptot
250
mW
Soldering temperature 3)
Tsol
230
°C
Rth JS
≤ 410
K/W
Thermal Resistance
Junction-soldering point
Notes.:
1) For VDS ≤ 3 V. For VDS > 3 V, derating is required.
2) At TS = + 72.5 °C. For TS > + 72.5 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
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Draft D, Sep. 0000
CFY25
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
VDS = 3 V, VGS = 0 V
IDss
15
30
60
mA
Gate threshold voltage
VDS = 3 V, ID = 1 mA
-VGth
0.3
1.0
3.0
V
Drain current at pinch-off
VDS = 3 V, VGS = - 4 V
IDp
-
< 100
-
µA
Gate leakage current at pinch-off
VDS = 3 V, VGS = - 4 V
-IGp
-
< 100
200
µA
Transconductance
VDS = 3 V, ID = 15 mA
gm15
35
40
-
mS
Gate leakage current at operation
VDS = 3 V, ID = 15 mA
-IG15
-
<1
2
µA
Thermal resistance
junction to soldering point
Rth JS
-
370
-
K/W
Semiconductor Group
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Draft D, Sep. 0000
CFY25
Electrical Characteristics (continued)
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Noise figure 1)
NF
dB
VDS = 3 V, ID = 15 mA, f = 12 GHz
CFY25-P
-
< 2.3
-
CFY25-20, -20P
-
1.9
2.1
CFY25-23, -23P
-
2.2
2.4
Associated gain. 1)
Ga
dB
VDS = 3 V, ID = 15 mA, f = 12 GHz
CFY25-P
-
> 8.5
-
CFY25-20, -20P
8.5
9
-
CFY25-23, -23P
8.0
8.7
-
Output power at 1 dB gain compression 2) P1dB
dBm
VDS = 3 V, ID(RF off) = 20 mA, f = 12 GHz
CFY25-20, -23
-
15
-
CFY25-20P, 23P, -P
14
15
-
Linear power gain 2)
Glp
dB
VDS = 3 V, ID = 20 mA, f = 12 GHz,
Pin = 0 dBm
CFY25-20
-
9.2
-
CFY25-23
-
8.5
-
CFY25-20P, -P
8.5
9.2
-
CFY25-23P
8.0
8.5
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
Semiconductor Group
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Draft D, Sep. 0000
CFY25
Typical Common Source S-Parameters CFY25-20
f
|S11| <S11
[GHz] [magn [angle
]
]
0,5
0,958
-22
1,0
0,931
-28
1,5
0,901
-36
2,0
0,875
-45
2,5
0,858
-56
3,0
0,838
-67
3,5
0,815
-78
4,0
0,794
-88
4,5
0,776
-98
5,0
0,760 -108
5,5
0,746 -117
6,0
0,732 -126
6,5
0,718 -135
7,0
0,703 -143
7,5
0,689 -150
8,0
0,674 -158
8,5
0,661 -166
9,0
0,650 -174
9,5
0,640
178
10,0 0,629
170
10,5 0,620
162
11,0 0,613
153
11,5 0,607
145
12,0 0,600
137
12,5 0,593
130
13,0 0,587
122
13,5 0,580
114
14,0 0,575
106
14,5 0,572
98
15,0 0,568
90
15,5 0,565
82
16,0 0,565
73
16,5 0,564
65
17,0 0,564
57
17,5 0,564
51
18,0 0,567
47
Semiconductor Group
V D S = 3 V, ID = 15 mA, Zo = 50 ?
|S21| <S21 |S12| <S12 |S22| <S22 k-Fact.
[magn [angle [magn [angle [magn [angle [magn]
]
]
]
]
]
]
3,301
160 0,0170
71
0,683
-14
0,44
3,208
155 0,0287
64
0,673
-18
0,50
3,107
148 0,0398
59
0,660
-23
0,54
3,016
139 0,0502
53
0,648
-29
0,56
2,950
130 0,0602
47
0,635
-35
0,55
2,877
120 0,0691
42
0,621
-41
0,56
2,795
111 0,0767
36
0,603
-48
0,58
2,708
102 0,0834
31
0,590
-54
0,61
2,621
93
0,0893
25
0,573
-60
0,64
2,537
84
0,0939
20
0,562
-67
0,66
2,451
76
0,0975
15
0,549
-73
0,69
2,365
68
0,1000
10
0,539
-80
0,72
2,281
60
0,1017
5
0,529
-86
0,77
2,202
52
0,1035
1
0,521
-91
0,81
2,133
45
0,1049
-3
0,511
-96
0,87
2,072
38
0,1056
-6
0,504 -101
0,92
2,020
30
0,1063 -10
0,495 -106
0,97
1,976
23
0,1068 -13
0,484 -111
1,02
1,933
16
0,1076 -16
0,474 -116
1,06
1,896
9
0,1080 -20
0,463 -121
1,11
1,859
2
0,1084 -23
0,452 -127
1,16
1,826
-5
0,1090 -26
0,443 -133
1,19
1,797
-13 0,1097 -29
0,436 -140
1,22
1,767
-20 0,1105 -33
0,431 -147
1,24
1,738
-27 0,1114 -36
0,426 -153
1,27
1,708
-34 0,1125 -40
0,421 -159
1,30
1,678
-41 0,1138 -43
0,419 -166
1,32
1,651
-49 0,1149 -47
0,417 -172
1,34
1,627
-56 0,1161 -51
0,413 -178
1,36
1,607
-63 0,1180 -55
0,410
176
1,37
1,589
-70 0,1198 -59
0,408
170
1,37
1,570
-78 0,1219 -64
0,404
164
1,37
1,552
-86 0,1242 -69
0,402
157
1,36
1,548
-92 0,1266 -74
0,398
152
1,35
1,554
-98 0,1292 -78
0,396
147
1,32
1,562 -102 0,1319 -81
0,394
143
1,28
5 of 8
S 21 / S 12 MAG
[dB]
[dB]
22,9
20,5
18,9
17,8
16,9
16,2
15,6
15,1
14,7
14,3
14,0
13,7
13,5
13,3
13,1
12,9
12,8
12,7
12,5
12,4
12,3
12,2
12,1
12,0
11,9
11,8
11,7
11,6
11,5
11,3
11,2
11,1
11,0
10,9
10,8
10,7
11,7
11,0
10,4
9,9
9,6
9,3
9,1
8,8
8,5
8,3
8,1
7,9
7,7
7,6
7,5
7,4
7,4
7,4
7,6
Draft D, Sep. 0000
CFY25
Typical Common Source S-Parameters CFY25-20 (continued)
f
[GHz]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
|S11|
[mag]
0,953
0,921
0,892
0,861
0,836
0,814
0,790
0,768
0,749
0,731
0,714
0,699
0,683
0,669
0,657
0,645
0,632
0,620
0,609
0,600
0,592
0,586
0,579
0,574
0,571
0,566
0,563
0,561
0,559
0,556
0,556
0,556
0,557
0,559
0,561
0,565
<S11
[ang]
-24
-30
-39
-49
-60
-72
-83
-94
-104
-114
-124
-133
-141
-149
-157
-165
-173
179
171
163
154
146
138
130
123
115
107
99
91
83
75
66
58
50
45
40
Semiconductor Group
V D S = 3 V, ID = 30 mA, Zo = 50 ?
|S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S 21 / S 12 MAG
[mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB]
[dB]
3,987
159 0,0140
74
0,657
-15
0,49
24,5
3,858
153 0,0246
67
0,647
-18
0,53
22,0
3,714
146 0,0346
60
0,634
-23
0,56
20,3
3,583
138 0,0444
55
0,621
-28
0,59
19,1
3,484
128 0,0543
49
0,608
-35
0,58
18,1
3,374
118 0,0621
43
0,594
-41
0,60
17,4
3,254
108 0,0684
38
0,576
-47
0,63
16,8
3,129
99
0,0736
32
0,557
-53
0,67
16,3
3,007
90
0,0779
27
0,541
-59
0,70
15,9
2,890
82
0,0810
22
0,527
-65
0,74
15,5
2,776
73
0,0844
18
0,515
-72
0,78
15,2
2,662
65
0,0863
14
0,505
-78
0,83
14,9
2,556
57
0,0880
10
0,498
-84
0,88
14,6
2,458
50
0,0893
6
0,492
-89
0,93
14,4
2,374
42
0,0904
3
0,486
-94
0,98
14,2
2,299
35
0,0918
0
0,480
-99
1,02
14,0
13,1
2,233
28
0,0933
-2
0,474 -103
1,07
13,8
12,2
2,174
21
0,0945
-5
0,467 -108
1,11
13,6
11,6
2,120
14
0,0960
-8
0,459 -112
1,15
13,4
11,1
2,071
7
0,0976 -10
0,453 -118
1,18
13,3
10,7
2,026
0
0,0990 -13
0,446 -123
1,21
13,1
10,4
1,984
-7
0,1006 -16
0,441 -129
1,23
12,9
10,1
1,947
-14 0,1026 -19
0,436 -136
1,24
12,8
9,8
1,910
-21 0,1047 -22
0,432 -142
1,25
12,6
9,6
1,876
-29 0,1066 -25
0,428 -149
1,26
12,5
9,4
1,842
-36 0,1088 -28
0,425 -155
1,27
12,3
9,2
1,806
-43 0,1108 -32
0,424 -161
1,28
12,1
9,0
1,774
-50 0,1140 -35
0,422 -167
1,27
11,9
8,8
1,745
-57 0,1170 -39
0,421 -173
1,26
11,7
8,7
1,719
-64 0,1199 -43
0,419 -179
1,26
11,6
8,5
1,698
-72 0,1229 -48
0,417
175
1,24
11,4
8,4
1,676
-79 0,1257 -53
0,414
168
1,23
11,2
8,3
1,653
-87 0,1286 -58
0,412
162
1,23
11,1
8,2
1,646
-93 0,1320 -63
0,410
157
1,20
11,0
8,3
1,649
-99 0,1350 -67
0,409
152
1,16
10,9
8,4
1,656 -103 0,1376 -71
0,407
148
1,13
10,8
8,6
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Draft D, Sep. 0000
CFY25
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY25- (nnl) (ql)
(nnl):
Noise/Gain/Power Level
(ql): Quality Level
Ordering Example:
Ordering Code: Q62703F119
CFY25-20P
For CFY25, Noise/Gain/Power Level 20P:
NF < 2.1dB, Ga > 8.5 dB, P1dB > 14 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
- HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
Semiconductor Group
++89 6362 4480
++89 6362 5568
[email protected]
Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
7 of 8
Draft D, Sep. 0000
CFY25
Micro-X Package
Published by Siemens Semiconductors, High
Frequency Products Marketing, P.O.Box 801709, D81617 Munich.
 Siemens AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and
shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany
or the Siemens Companies and Representatives
woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens Semiconductors is a certified CECC and QS9000
manufacturer (this includes ISO 9000).
Semiconductor Group
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Draft D, Sep. 0000