HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BFY 196 (ql) - see below C Micro-X1 E B E (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1684 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request (see Chapter Order Instructions for ordering example) Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Collector-emitter voltage VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg 12 V 20 V 20 V 2 V 100 mA 12 1) mA 700 mW 200 °C - 65 É + 200 °C - 65 É + 200 °C Rth JS < 135 K/W Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 104 °C 2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) The maximum permissible base current for VFBE measurements is 50 mA (spot measurement duration < 1 s). 2) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Draft A03 1998-04-01 BFY 196 Electrical Characteristics Table 2 DC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Collector-base cutoff current VCB = 20 V, IE = 0 ICBO - - 100 mA Collector-emitter cutoff current VCE = 12 V, IB = 1 mA 3) ICEX - - 1000 mA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 25 mA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 0.5 mA Base-emitter forward voltage IE = 50 mA, IC = 0 VFBE - - 1 V DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 175 - 3) This test assures V(BR)CE0 > 12 V. Semiconductor Group 2 Draft A03 1998-04-01 BFY 196 Table 3 AC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. 6 6.5 - GHz Collector-base capacitance CCB VCB = 10 V, VBE = vbe = 0, f = 1 MHz - 1 1.3 pF Collector-emitter capacitance CCE VCE = 10 V, VBE = vbe = 0, f = 1 MHz - 0.44 - pF Emitter-base capacitance CEB VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz - 3.6 4.3 pF Noise figure IC = 20 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 3 3.5 dB Power gain IC = 70 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Gma 4) 10 11 - dB Transducer gain IC = 70 mA, VCE = 5 V, f = 2 GHz, ZS = ZL = 50 W ½S21e½2 4 5 - dB Output power IC = 80 mA, VCE = 5 V, f = 2 GHz, PIN = 15 dBm, ZS = ZL = 50 W Pout 18.5 19.5 - dBm fT Transition frequency IC = 70 mA, VCE = 5 V, f = 500 MHz 4) 2 S21 G ma = S21 ----------- ( k Ð k Ð 1 ), G ms = ----------S12 Semiconductor Group S12 3 Draft A03 1998-04-01 BFY 196 Order Instructions Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: QÉ BFY196 (x) (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1684 BFY196 P For BFY196 in Professional Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: [email protected] Semiconductor Group 4 Draft A03 1998-04-01 BFY 196 1.05 ±0.25 1.02 ±0.1 0.76 3 ø1.65 ±0.1 1 XY 4.2 -0.2 0.5 ±0.1 2 4 0.1 +0.05 -0.03 1.78 GXM05552 Figure 1 Micro-X1 Package Semiconductor Group 5 Draft A03 1998-04-01