Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery FEATURES BY329 series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 800 V/ 1000 V/ 1200 V k 1 IF(AV) = 8 A a 2 IFSM ≤ 75 A trr ≤ 135 ns GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. PINNING PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package. 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. BY329 VRSM VRRM VRWM Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage IF(AV) Average forward current1 IF(RMS) IFRM IFSM I2t Tstg Tj square wave; δ = 0.5; Tmb ≤ 122 ˚C sinusoidal; a = 1.57; Tmb ≤ 125 ˚C RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 122 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature MAX. UNIT - -800 800 -1000 -1200 1000 1200 V - 800 600 1000 800 V V 1200 1000 - 8 A - 7 A - 11 16 A A - 75 82 A A -40 - 28 150 150 A2s ˚C ˚C 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air. MIN. TYP. MAX. UNIT - - 2.0 K/W - 60 - K/W MIN. TYP. MAX. UNIT - 1.5 0.1 1.85 1.0 V mA MIN. TYP. MAX. UNIT - 100 0.5 50 135 0.7 60 ns µC A/µs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF IR Forward voltage Reverse current IF = 20 A VR = VRWM; Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS trr Qs dIR/dt Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs IF = 2 A; -dIF/dt = 20 A/µs September 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery I dI F BY329 series 100 F IFS (RMS) / A BY329 90 dt 80 IFSM 70 trr 60 time 50 40 Qs I 30 100% 25% 20 10 I R 0 1ms rrm Fig.1. Definition of trr, Qs and Irrm 20 30 110 15 10s BY229F Tj = 150 C Tj = 25 C 120 0.5 20 0.2 10 1s IF / A D = 1.0 Vo = 1.25 V Rs = 0.03 Ohms 0.1s tp / s Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. Tmb(max) / C BY329 PF / W 10ms 130 0.1 tp I D= 5 tp T 2 4 6 IF(AV) / A 8 typ 10 150 12 0 0 Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T. 15 BY329 PF / W Tmb(max) / C Vo = 1.25 V 0.5 1 VF / V 10 120 2 BY329 Qs / uC Tj = 150 C Tj = 25 C a = 1.57 IF = 10 A 1.9 2.2 1.5 Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj Rs = 0.03 Ohms 10 max t T 0 0 10 140 10 A 130 2A 2.8 4 1A 2A 1 1A 140 5 0 0 2 4 IF(AV) / A 6 0.1 150 8 1 Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV). September 1998 10 -dIF/dt (A/us) 100 Fig.6. Maximum Qs at Tj = 25˚C and 150˚C 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329 series BY329 trr / ns 1000 10 Transient thermal impedance, Zth j-mb (K/W) IF = 10 A 1 10A 1A 1A 0.1 100 PD 0.01 tp D= Tj = 150 C Tj = 25 C 0.001 1us 10 1 10 -dIF/dt (A/us) 100 Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C 100 T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229 10s Fig.9. Transient thermal impedance Zth = f(tp) BY329 Cd / pF 10 1 1 10 VR / V 100 1000 Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C September 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.200