Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR645CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 40 V/ 45 V a2 3 a1 1 IO(AV) = 6 A VF ≤ 0.6 V k 2 GENERAL DESCRIPTION PINNING Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. PIN The PBYR645CTD series is supplied in the SOT428 surface mounting package. SOT428 DESCRIPTION 1 anode 1 2 cathode1 3 anode 2 tab cathode tab 2 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR6 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature MAX. UNIT - 40CTD 40 45CTD 45 V - 40 45 V Tmb ≤ 113 ˚C - 40 45 V square wave; δ = 0.5; Tmb ≤ 134 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 6 A - 6 A - 65 70 A A - 1 A - 150 ˚C - 65 175 ˚C 1 it is not possible to make connection to pin 2 of the SOT428 package September 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CTD series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb per diode both diodes pcb mounted, minimum footprint, FR4 board Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient MIN. - TYP. MAX. UNIT 50 4 3.5 - K/W K/W K/W ELECTRICAL CHARACTERISTICS All characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Cd Junction capacitance September 1998 CONDITIONS MIN. IF = 3 A; Tj = 125˚C IF = 6 A; Tj = 125˚C IF = 6 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C 2 - TYP. MAX. UNIT 0.55 0.67 0.77 0.1 5 96 0.6 0.72 0.94 0.4 15 - V V V mA mA pF Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CTD series Forward dissipation, PF (W) PBYR645CTD Tmb(max) / C 138 D = 1.0 Vo = 0.48 V 3 100mA PBYR645CTD Reverse current, IR (A) Rs = 0.04 Ohms 2.5 0.5 10mA 2 142 0.2 125 C 0.1 1.5 1mA 100 C 75 C 1 tp I D= 146 tp T 100uA 0.5 0 0 1 Tj = 25 C t T 150 5 2 3 4 Average forward current, IF(AV) (A) 10uA 0 Fig.1. Maximum forward dissipation per diode PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 2.5 Forward dissipation, PF (W) 25 Reverse voltage, VR (V) 50 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj PBYR645CTD Tmb(max) / C Vo = 0.48 V Rs = 0.04 Ohms 50 C 1000 PBYR645CTD Junction capacitance, Cd (pF) a = 1.57 2 142 1.9 2.2 2.8 1.5 4 100 146 1 0.5 0 0 0.5 150 3 1 1.5 2 2.5 Average forward current, IF(AV) (A) 10 Fig.2. Maximum forward dissipation per diode PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 12 10 10 Reverse voltage, VR (V) 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR645CTD Forward current, IF (A) 1 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C typ 1 8 max 6 0.1 4 PD tp D= tp T 2 T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VR (V) 1.2 1.4 Fig.3. Typical and maximum forward characteristic per diode IF = f(VF); parameter Tj September 1998 1us 10us 100us t 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR645CTD Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CTD series MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g seating plane 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.7. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.8. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CTD series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 5 Rev 1.100