Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION QUICK REFERENCE DATA VR = 40 V/ 45 V k tab a 3 IF(AV) = 10 A VF ≤ 0.57 V PINNING Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. PIN The PBYR1045D series is supplied in the surface mounting SOT428 package. SOT428 DESCRIPTION 1 no connection 2 cathode1 3 anode tab 2 tab cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR10 VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature MAX. UNIT - 40D 40 45D 45 V - 40 45 V Tmb ≤ 113 ˚C - 40 45 V square wave; δ = 0.5; Tmb ≤ 134 ˚C - 10 A square wave; δ = 0.5; Tmb ≤ 134 ˚C - 20 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 100 110 A A - 1 A - 150 ˚C - 65 175 ˚C 1 It is not possible to make connection to pin 2 of the SOT428 package. July 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1045D series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, minimum footprint, FR4 board TYP. MAX. UNIT - - 2 K/W - 50 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Cd Junction capacitance July 1998 CONDITIONS MIN. IF = 10 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C 2 - TYP. MAX. UNIT 0.5 0.74 0.65 0.2 22 350 0.57 0.8 0.84 1.3 35 - V V V mA mA pF Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 10 PBYR1045D series Forward dissipation, PF (W) Tmb(max) (C) PBYR1045D 130 0.5 8 125 C 134 10 0.2 100 C 0.1 6 138 75 C 1 142 4 tp I D= 50 C tp T 0.1 146 2 t T 0 0 150 15 5 10 Average forward current, IF(AV) (A) Forward dissipation, PF (W) PBYR1045D Tmb(max) (C) Vo = 0.34 V Rs = 0.023 Ohms 8 4 6 2.8 2.2 Tj = 25 C 0.01 0 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 10 PBYR1045 Reverse current, IR (mA) 100 D = 1.0 Vo = 0.34 V Rs = 0.023 Ohms 25 Reverse voltage, VR (V) 50 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj PBYR1045 Cd / pF 130 1000 a = 1.57 134 1.9 138 100 4 142 2 146 0 0 2 10 150 10 4 6 8 Average forward current, IF(AV) (A) 1 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 50 100 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR1045 Forward current, IF (A) 10 VR / V 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 40 1 30 typ max 20 0.1 PD 10 0 tp D= T 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 0.01 1.4 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj July 1998 1us 10us 100us tp T t 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1045 Fig.6. Transient thermal impedance; Zth j-mb = f(tp). 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1045D series MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g seating plane 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.7. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.8. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". July 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1045D series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 5 Rev 1.100