IRF AUIRF3805STRL

PD - 96319
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
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AUIRF3805
AUIRF3805S
AUIRF3805L
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
55V
RDS(on) typ.
max.
3.3mΩ
ID (Silicon Limited)
210A c
G
S
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
G
TO-220AB
AUIRF3805
Absolute Maximum Ratings
ID (Package Limited) 160A
D
D
D
2.6mΩ
S
G
D
S
G
D2Pak
AUIRF3805S
D
S
TO-262
AUIRF3805L
G
D
S
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
210
150
160
890
300
2.0
± 20
650
940
See Fig.12a, 12b, 15, 16
d
d
h
i
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
e
k
i
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
i
j
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
e
Units
c
c
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
10 lbf in (1.1N m)
y
y
Typ.
Max.
Units
–––
0.50
–––
–––
0.5
–––
62
40
°C/W
l
1
07/20/10
AUIRF3805/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
75
–––
–––
–––
–––
–––
0.051
2.6
–––
–––
–––
–––
–––
–––
–––
–––
3.3
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 75A **
V VDS = VGS, ID = 250µA
V VDS = 25V, ID = 75A **
VDS = 55V, VGS = 0V
µA
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
190
52
72
150
20
93
87
290
–––
–––
–––
–––
–––
–––
–––
4.5
–––
nC
ns
nH
–––
7.5
–––
–––
–––
–––
–––
–––
–––
7960
1260
630
4400
980
1550
–––
–––
–––
–––
–––
–––
pF
ID = 75A **
VDS = 44V
VGS = 10V
VDD = 28V
ID = 75A**
RG = 2.6 Ω
VGS = 10V
Between lead,
f
f
D
6mm (0.25in.)
from package
G
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
g
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Note
2
c
Min. Typ. Max. Units
–––
–––
c
210
–––
–––
890
–––
–––
–––
–––
36
47
1.3
54
71
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A** , VGS = 0V
TJ = 25°C, IF = 75A** , VDD = 28V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
∗ ∗ are on page 3
 through Š ,,
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AUIRF3805/S/L
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments:
This
part
number(s)
passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
3L-D2 PAK
Moisture Sensitivity Level
MSL1 , 260°C
3L-TO-262
3L-TO-220
Machine Model
ESD
††
N/A
Class M4(+/-425V)
(per AEC-Q101-002)
Class H3A(+/-4000V)
Human Body Model
(per AEC-Q101-001)
Class C5 (+/-1000V)
Charged Device Model
(per AEC-Q101-005)
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:

Calculated continuous current based on maximum
allowable junction temperature. Bond wire current
limit is 160A. Note that current limitations arising from
heating of the device leads may occur with some lead
ƒ
mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
This value determined from sample failure population ,
„
VGS =10V.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
…
Coss eff. is a fixed capacitance that gives the same
‚
starting T J = 25°C, L = 0.23mH RG = 25Ω, I AS = 75A,
†
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡
This is only applied to TO-220AB pakcage.
ˆ
This is applied to D2Pak, when mounted on 1" square PCB
(FR- 4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
‰
Rθ is measured at TJ of approximately 90°C.
Š TO-220 device will have an Rth of 0.45°C/W.
* * All AC and DC test condition based on former Package limitated
current of 75A.
charging time as Coss while VDS is rising from 0 to
80% VDSS .
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3
AUIRF3805/S/L
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
BOTTOM
100
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
10
1
0.1
1
10
0.1
100
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
TJ = 175°C
100.0
10.0
TJ = 25°C
1.0
VDS = 20V
≤ 60µs PULSE WIDTH
TJ = 25°C
160
TJ = 175°C
120
80
40
VDS = 10V
380µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
VDS, Drain-to-Source Voltage (V)
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current(Α)
1
≤ 60µs PULSE WIDTH
Tj = 175°C
VDS, Drain-to-Source Voltage (V)
1000.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0
0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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AUIRF3805/S/L
14000
VGS, Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
8000
6000
4000
Coss
2000
Crss
16
12
8
4
10
0
100
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000.0
TJ = 175°C
100.0
10.0
TJ = 25°C
1.0
VGS = 0V
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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150
200
250
300
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
10msec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.8
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.4
50
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
0.0
VDS = 44V
VDS= 28V
0
0
1
ID= 75A
2.4
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3805/S/L
240
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
LIMITED BY PACKAGE
ID , Drain Current (A)
200
160
120
80
40
0
25
50
75
100
125
150
ID = 75A
VGS = 10V
1.5
1.0
0.5
175
-60 -40 -20
T C , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τ
Ri (°C/W)
0.2653
0.2347
τi (sec)
0.001016
0.012816
Ci= τi/Ri
Ci i/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
VGS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
AUIRF3805/S/L
2000
I D
15A
20A
BOTTOM 75A
TOP
1600
1200
800
400
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
4.5
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
VGS(th) Gate threshold Voltage (V)
10 V
4.0
ID = 250µA
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
VGS
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage Vs. Temperature
7
AUIRF3805/S/L
10000
Avalanche Current (A)
Duty Cycle = Single Pulse
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
800
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
175
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF3805/S/L
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
P.W.
Period
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
• dv/dt controlled by R G
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

RG
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3805/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3805
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF3805/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF3805S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF3805/S/L
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRF3805L
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF3805/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
www.irf.com
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
13
AUIRF3805/S/L
Ordering Information
Base part
AUIRF3805
AUIRF3805L
AUIRF3805S
14
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
50
800
800
AUIRF3805
AUIRF3805L
AUIRF3805S
AUIRF3805STRL
AUIRF3805STRR
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AUIRF3805/S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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and applications using IR components. To minimize the risks with customer products and applications, customers should
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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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15