PD -96379
AUTOMOTIVE GRADE
AUIRF2903Z
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
V(BR)DSS
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
30V
RDS(on) typ.
max.
2.4mΩ
ID (Silicon Limited)
260Ak
ID (Package Limited)
160A
G
S
1.9mΩ
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF2903Z
Absolute Maximum Ratings
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
k
180k
160k
IDM
Pulsed Drain Current
1020
PD @TC = 25°C
Power Dissipation
290
W
Linear Derating Factor
2.0
W/°C
± 20
V
290
mJ
260
c
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy (Thermally limited)
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
c
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
h
d
A
820
See Fig.12a, 12b, 15, 16
g
A
mJ
-55 to + 175
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
300 (1.6mm from case )
y
y
10 lbf in (1.1N m)
Thermal Resistance
Parameter
j
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
i
i
Typ.
Max.
–––
0.51
0.50
–––
–––
62
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
AUIRF2903Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units
30
–––
–––
2.0
120
–––
–––
–––
–––
–––
0.021
1.9
–––
–––
–––
–––
–––
–––
–––
–––
2.4
4.0
–––
20
250
200
-200
V
V/°C
mΩ
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A **
VDS = VGS, ID = 250μA
VDS = 10V, ID = 75A**
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
160
51
58
24
100
48
37
240
–––
–––
–––
–––
–––
–––
nC
ns
–––
4.5
–––
–––
7.5
–––
–––
–––
–––
–––
–––
–––
6320
1980
1100
5930
2010
3050
–––
–––
–––
–––
–––
–––
pF
Min.
Typ.
Max.
Units
nH
ID = 75A**
VDS = 24V
VGS = 10V
VDD = 15V
ID = 75A**
RG = 3.2 Ω
VGS = 10V
e
e
D
Between lead,
6mm (0.25in.)
G
from package
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
f
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
k
–––
–––
160
–––
–––
1020
–––
–––
–––
–––
34
29
1.3
51
44
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A**, VGS = 0V
TJ = 25°C, IF = 75A**, VDD = 15V
di/dt = 100A/μs
D
e
S
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.10mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
2
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB pakcage.
Rθ is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 160A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
** All AC and DC test condition based on former Package limited
current of 75A.
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AUIRF2903Z
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
3L-TO-220
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
Human Body Model
Class H2(+/- 4000V )
(per AEC-Q101-001)
Charged Device Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
†††
ESD
†††
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRF2903Z
1000
1000
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
10
4.5V
TOP
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
100
4.5V
10
1
1
100
≤ 60μs PULSE WIDTH
Tj = 175°C
≤ 60μs PULSE WIDTH
Tj = 25°C
0.1
BOTTOM
0.1
1000
Fig 1. Typical Output Characteristics
10
100
1000
Fig 2. Typical Output Characteristics
240
100.0
Gfs, Forward Transconductance (S)
1000.0
ID, Drain-to-Source Current(Α)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 25V
≤ 60μs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 25°C
200
TJ = 175°C
160
120
80
40
VDS = 10V
380μs PULSE WIDTH
0.1
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10.0
0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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AUIRF2903Z
12000
VGS, Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Ciss
6000
4000
Coss
2000
Crss
ID= 75A
16
12
8
4
0
0
1
10
0
100
40
120
160
200
240
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
ID, Drain-to-Source Current (A)
1000.0
TJ = 175°C
100.0
80
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
VDS = 24V
VDS= 15V
10.0
TJ = 25°C
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
1msec
100μsec
100
LIMITED BY PACKAGE
10
1
VGS = 0V
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.4
0.1
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2903Z
300
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
LIMITED BY PACKAGE
ID , Drain Current (A)
250
200
150
100
50
0
25
50
75
100
125
150
ID = 75A
VGS = 10V
1.5
1.0
0.5
175
-60 -40 -20 0
TC , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
R3
R3
τ3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.08133 0.000044
0.2408
0.000971
0.18658 0.008723
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
DRIVER
L
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS, Single Pulse Avalanche Energy (mJ)
AUIRF2903Z
1200
I D
26A
42A
BOTTOM 75A
TOP
1000
800
600
400
200
0
25
V(BR)DSS
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
VGS(th) Gate threshold Voltage (V)
4.5
QG
10 V
QGS
QGD
VG
Charge
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 150μA
4.0
3.5
3.0
2.5
2.0
1.5
Fig 13a. Basic Gate Charge Waveform
1.0
-75 -50 -25
Current Regulator
Same Type as D.U.T.
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
50KΩ
12V
Fig 14. Threshold Voltage Vs. Temperature
.2μF
.3μF
D.U.T.
+
V
- DS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2903Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ΔTj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF2903Z
D.U.T
Driver Gate Drive
P.W.
+
-
-
-
Reverse
Recovery
Current
+
RG
V DD
• dv/dt controlled by R G
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
D.U.T. ISD Waveform
+
D=
VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET®
Power MOSFETs
RD
V DS
V GS
D.U.T.
RG
+
- V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF2903Z
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUF2903Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2903Z
Ordering Information
Base part
AUIRF2903Z
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Package Type
TO-220
Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRF2903Z
11
AUIRF2903Z
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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and applications using IR components. To minimize the risks with customer products and applications, customers should
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