IRF AUIRF2805

PD - 97690A
AUTOMOTIVE GRADE
AUIRF2805
Features
l Advanced Planar Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
V(BR)DSS
D
G
S
55V
RDS(on) typ.
max
ID (Silicon Limited)
3.9m
4.7m
175A
ID (Package Limited)
75A
Description
D
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF2805
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
175
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
120
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
75
Units
A
c
700
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
330
2.2
± 20
W
W/°C
V
mJ
IDM
Pulsed Drain Current
d
EAS
Single Pulse Avalanche Energy (Thermally Limited)
450
EAS (tested)
Single Pulse Avalanche Energy Tested Value
1220
c
i
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
h
See Fig. 12a, 12b, 15, 16
-55 to + 175
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Max.
–––
0.45
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Junction-to-Case
RCS
RJA
j
Parameter
y
Typ.
RJC
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
12/14/11
AUIRF2805
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
2.0
91
–––
–––
–––
–––
–––
0.06
3.9
–––
–––
–––
–––
–––
–––
–––
–––
4.7
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 104A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 104A
μA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
150
38
52
14
120
68
110
4.5
230
57
78
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5110
1190
210
6470
860
1600
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
nC
ns
nH
g
pF
ID = 104A
VDS = 44V
VGS = 10V
VDD = 28V
ID = 104A
RG = 2.5 
VGS = 10V
Between lead,
f
f
D
G
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
175
ISM
(Body Diode)
Pulsed Source Current
–––
–––
700
VSD
trr
Qrr
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
80
290
1.3
120
430
(Body Diode)c
Conditions
MOSFET symbol
A
V
ns
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 104A, VGS = 0V
TJ = 25°C, IF = 104A
di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.08mH
RG = 25, IAS = 104A. (See Figure 12).
ƒ ISD  104A, di/dt  240A/μs, VDD V(BR)DSS,
TJ  175°C
„ Pulse width  400μs; duty cycle  2%.
2
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population, starting
TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A.
ˆ Ris measured at TJ of approximately 90°C.
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AUIRF2805
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M4 (+/- >800V)†††
AEC-Q101-002
ESD
Human Body Model
Class H3A (+/- 5000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- >2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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3
AUIRF2805
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
10
20μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
4.5V
20μs PULSE WIDTH
Tj = 175°C
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 175°C
100
VDS = 25V
20μs PULSE WIDTH
10
4.0
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10.0
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current A)
T J = 25°C
160
T J = 175°C
120
T J = 25°C
80
40
VDS = 25V
20μs PULSE WIDTH
0
0
40
80
120
160
200
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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ance
AUIRF2805
10000
Crss
Coss
= Cgd
= Cds + Cgd
6000
Ciss
4000
2000
Coss
1
16
12
8
4
0
Crss
0
10
0
100
1000.0
10000
ID, Drain-to-Source Current (A)
T J = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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80
120
160
200
240
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
40
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100.0
VDS= 44V
VDS= 28V
ID= 104A
VGS , Gate-to-Source Voltage (V)
8000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
1000
100
100μsec
1msec
10
1
1.8
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2805
3.0
180
I D = 175A
LIMITED BY PACKAGE
2.5
ID , Drain Current (A)
120
90
60
30
0
25
50
75
100
125
150
2.0
(Normalized)
RDS(on) , Drain-to-Source On Resistance
150
1.5
1.0
0.5
V GS = 10V
0.0
-60
175
-40
-20
0
20
40
60
80
100 120 140 160 180
( ° C)
TJ , Junction Temperature
TC , Case Temperature ( °C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
(Z thJC )
1
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
t1/ t
2
J = P DM x Z thJC
+T C
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2805
15V
1000
DRIVER
L
VDS
D.U.T
+
V
- DD
IAS
VGS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
800
RG
ID
43A
87A
TOP
BOTTOM
104A
600
400
200
0
25
50
75
100
125
Starting Tj, Junction Temperature
150
175
( ° C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
VGS(th) Gate threshold Voltage (V)
VG
ID = 250μA
3.0
2.0
.3F
D.U.T.
+
V
- DS
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2805
10000
Avalanche Current (A)
Duty Cycle = Single Pulse
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming  Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
500
TOP
Single Pulse
BOT TOM 10% Duty Cycle
ID = 104A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF2805
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
P.W.
Period
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
V DD
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VGS=10V
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG
Period
P.W.
+
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple  5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width µs
Duty Factor 
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF2805
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF2805
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2805
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF2805
TO-220
Form
Tube
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Complete Part Number
Quantity
50
AUIRF2805
11
AUIRF2805
IMPORTANT NOTICE
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subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
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applications, customers should provide adequate design and operating safeguards.
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WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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