PD - 94449 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF7Y1405CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF7Y1405CM 55V RDS(on) ID 0.0153Ω 18A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 18* 18* 72 100 0.8 ±20 308 18 10 1.8 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 05/31/02 IRF7Y1405CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Typ Max Units Test Conditions 55 — — V VGS = 0V, ID = 250µA — 0.057 — V/°C Reference to 25°C, ID = 1.0mA — — 0.0153 Ω 2.0 36 — — — — — — 4.0 — 25 250 V S( ) Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 100 -100 200 40 80 20 90 250 150 — Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5080 1300 300 — — — VGS = 10V, ID = 18A ➃ VDS = VGS, ID = 250µA VDS =15V, IDS = 18A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ=125°C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 44V Ω BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 28V, ID = 18A, VGS = 10V, RG = 2.5Ω ns nH pF Measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units — — — — — — — — — — 18* 72 1.3 100 350 Test Conditions A V ns nC Tj = 25°C, IS = 18A, VGS = 0V ➃ Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.25 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7Y1405CM 1000 1000 VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V VGS 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 1 100 10 3.7V 3.7V 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 Tj = 150°C 1 0.1 100 Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α ) T J = 150°C 10 T J = 25°C 1 VDS = 25V 15 20µs PULSE WIDTH 0.1 4.0 4.2 4.4 4.6 4.8 5.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 3.8 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 3.6 1 5.2 ID = 18A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7Y1405CM C, Capacitance (pF) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 4000 C oss 2000 Crss 20 VGS , Gate-to-Source Voltage (V) 8000 0 1 10 ID = 18A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 60 VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current ( Α ) 100 ID, Drain-to-Source Current (A) T J = 150°C 10 T J = 25°C 1 VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 180 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 0.2 120 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 VDS = 44V VDS = 27V VDS = 11V 1.8 OPERATION IN THIS AREA LIMITED BY RDS(on) 100µs 10 1ms 10ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7Y1405CM 70 RD V DS LIMITED BY PACKAGE VGS 60 D.U.T. I D , Drain Current (A) RG + -V DD 50 VGS 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7Y1405CM 1 5V D R IV E R L VD S D .U .T. RG + V - DD IA S VGS 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S EAS , Single Pulse Avalanche Energy (mJ) 800 ID 8.0A 11.4A BOTTOM 18A TOP 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ .2µF 12V .3µF QG 10V D.U.T. QGS + V - DS QGD VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF7Y1405CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 18A, di/dt ≤ 230 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L= 1.9 mH Peak IAS = 18A, VGS =10V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 55V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA 0.13 [.005] A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 10.92 [.430] 10.42 [.410] 1 2 1.14 [.045] 0.89 [.035] B 3 0.71 [.028] MAX. C 15.88 [.625] 12.70 [.500] 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] Ø 0.50 [.020] C A NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA. 3.05 [.120] B P IN AS S IGNME NT S 1 = GAT E 2 = DRAIN 3 = S OURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/02 www.irf.com 7