DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA06 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose transistor PZTA06 PINNING FEATURES • High current (max. 500 mA) PIN • Low voltage (max. 80 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • Medium power switching in e.g. telephony and professional communication. 4 handbook, halfpage DESCRIPTION 2, 4 NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. 1 3 1 2 3 Top view MAM287 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 80 V IC collector current (DC) − 500 mA Ptot total power dissipation Tamb ≤ 25 °C − 1.2 W hFE DC current gain IC = 100 mA; VCE = 1 V 100 − fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − 1997 Jul 14 2 MHz Philips Semiconductors Product specification NPN general purpose transistor PZTA06 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 500 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA − 1.2 W Tamb ≤ 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE UNIT 103 K/W 22 K/W note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 80 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 5 V − 50 nA hFE DC current gain IC = 10 mA; VCE = 1 V 100 − IC = 100 mA; VCE = 1 V 100 − − 250 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA VBE base-emitter voltage IC = 100 mA; VCE = 1 V − 1.2 V fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − MHz 1997 Jul 14 3 mV Philips Semiconductors Product specification NPN general purpose transistor PZTA06 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1997 Jul 14 EUROPEAN PROJECTION 4 Philips Semiconductors Product specification NPN general purpose transistor PZTA06 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 14 5 Philips Semiconductors Product specification NPN general purpose transistor PZTA06 NOTES 1997 Jul 14 6 Philips Semiconductors Product specification NPN general purpose transistor PZTA06 NOTES 1997 Jul 14 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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