BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit; typical values Mode of operation VDS (V) PL (W) Gp (dB) ηD (%) ACPR400 (dBc) ACPR600 (dBc) EVMrms (%) CW 28 100 13.4 49 - - - 38.5 −61 [1] −74 [2] 2.1 GSM EDGE 28 48 (AV) [1] ACPR400 at 30 kHz resolution bandwidth. [2] ACPR600 at 30 kHz resolution bandwidth. 13.8 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: ◆ Load power = 48 W (AV) ◆ Gain = 13.8 dB (typ) ◆ Efficiency = 38.5 % (typ) ◆ ACPR400 = −61 dBc (typ) ◆ ACPR600 = −74 dBc (typ) ◆ EVMrms = 2.1 % (typ) ■ Easy power control ■ Excellent ruggedness ■ High efficiency ■ Excellent thermal stability ■ Designed for broadband operation (1800 MHz to 2000 MHz) ■ Internally matched for ease of use BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 1.3 Applications ■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2: Pinning Pin Description 1 drain 2 gate 3 Simplified outline Symbol 1 1 3 [1] source 2 2 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Type number BLF4G20LS-110B Package Name Description Version - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C PL = 40 W - 0.62 0.71 K/W PL = 100 W - 0.52 0.61 K/W 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 2 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 2.5 3.1 3.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 2.7 3.2 3.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 27 30 - A IGSS gate leakage current VGS = ±15 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 10 A - 9.0 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A - 90 - mΩ Crs feedback capacitance - 2.5 - pF VGS = 0 V; VDS = 28 V; f = 1 MHz 7. Application information Table 7: Application information Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 48 W 13 13.8 - IRL input return loss PL(AV) = 48 W - −10 −6.5 dB ηD drain efficiency dB PL(AV) = 48 W 36 38.5 - % ACPR400 adjacent channel power ratio (400 kHz) PL(AV) = 48 W - −61 −58 dBc ACPR600 adjacent channel power ratio (600 kHz) PL(AV) = 48 W - −74 −71 dBc EVMrms rms EDGE signal distortion error PL(AV) = 48 W - 2.1 3.3 % EVMM peak EDGE signal distortion error PL(AV) = 48 W - 7.0 10 % 7.1 Ruggedness in class-AB operation The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 650 mA; PL = 110 W (CW); f = 1990 MHz. 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 3 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 001aac387 15 60 Gp Gp (dB) ηD (%) 13 001aac388 15 50 Gp (dB) 14 Gp ηD (%) 40 13 ηD 30 40 ηD 11 12 20 11 10 20 0 160 9 0 40 80 120 10 0 20 40 60 PL (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 001aac389 0 0 80 100 PL(AV) (W) IMD (dBc) Fig 2. Two-tone CW power gain and drain efficiency as functions of average load power; typical values 001aac390 0 IMD3 (dBc) −20 IMD3 -20 −40 IMD5 IMD7 -40 −60 1 2 3 4 -60 −80 -80 0 20 40 60 80 100 PL(AV) (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz 0 20 40 60 80 100 PL(AV) (W) VDS = 28 V; Tcase = 25 °C; f = 1990 MHz (1) IDq = 550 mA (2) IDq = 650 mA (3) IDq = 750 mA (4) IDq = 850 mA Fig 3. Intermodulation distortion as a function of average load power; typical values Fig 4. Third order intermodulation distortion as a function of average load power; typical values 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 4 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 001aac391 15 Gp (dB) 14 50 ηD (%) 40 Gp 001aac392 −50 ACPR (dBc) −60 30 13 ACPR400 −70 ηD 12 20 11 10 ACPR600 −80 0 10 0 20 40 −90 60 80 PL(AV) (W) 0 VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values 001aac393 12 20 Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as a function of average load power; typical values 001aac394 −56 4 ACPR (dBc) EVM (%) EVM (%) −60 3 −64 2 EVMM 8 ACPR 400 4 −68 1 EVMrms EVMrms −72 0 0 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz 0 0 20 30 40 ηD (%) 50 VDS = 28 V; IDq = 650 mA; Tcase = 25 °C; f = 1990 MHz Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as functions of drain efficiency; typical values 9397 750 14548 Product data sheet 10 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 5 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 8. Test information VDD C11 C8 C3 R1 + VG input 50 Ω C9 C10 C4 C2 output 50 Ω C6 C1 C5 C7 001aad664 See Table 8 for list of components. Fig 9. Test circuit for operation at 1990 MHz C11 C8 VDD C9 C3 W1 12.5 mm R1 C2 12.0 mm C10 17.6 mm C4 C5 C6 15.2 mm C7 C1 B L F 4 G 2 0 − 1 1 0 B I n p u t − P C S − R ev 2 B L F 4 G 2 0 − 1 1 0 B O u t p u t − P C S − R ev 2 001aac395 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 10. Component layout for 1990 MHz test circuit 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 6 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor Table 8: List of components (see Figure 10). Component Description Value C1 multilayer ceramic chip capacitor [1] C2, C4, C8 multilayer ceramic chip capacitor [1] C3, C10 tantalum capacitor 0.1 pF 11 pF 10 µF C5 multilayer ceramic chip capacitor [1] C6 multilayer ceramic chip capacitor [1] 8.2 pF C7 multilayer ceramic chip capacitor [1] 0.2 pF C9 multilayer ceramic chip capacitor 1 µF C11 Philips electrolytic capacitor 220 µF; 35 V R1 Philips chip resistor 5.6 Ω W1 hand made wire [1] 0.5 pF 1812X7R105KL2AB 0603 5 mm American Technical Ceramics type 100B or capacitor of same quality. 9397 750 14548 Product data sheet Dimensions Catalogue number © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 7 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502B Fig 11. Package outline SOT502B 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 8 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 9: Abbreviations Acronym Description ACPR Adjacent Channel Power Ratio CDMA Code Division Multiple Access CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution EVM Error Vector Magnitude GSM Global System for Mobile communications IDq quiescent drain current LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency VSWR Voltage Standing Wave Ratio 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 9 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 11. Revision history Table 10: Revision history Document ID Release date BLF4G20LS-110B_1 20060110 Data sheet status Change notice Doc. number Supersedes Product data sheet - 9397 750 14548 - 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 10 of 12 BLF4G20LS-110B Philips Semiconductors UHF power LDMOS transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14548 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 11 of 12 Philips Semiconductors BLF4G20LS-110B UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14548 Published in The Netherlands