DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY78; BCY79 PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59. 2 3 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS −32 V − −45 V BCY78 − −32 V BCY79 − −45 V collector-emitter voltage open base − −100 mA Tamb ≤ 45 °C − 340 mW Tcase ≤ 45 °C − 1 W BCY78/VII; BCY79/VII 120 220 BCY78/VIII; BCY79/VIII 180 310 IC collector current (DC) Ptot total power dissipation DC current gain IC = −2 mA; VCE = −5 V BCY78/IX; BCY79/IX 250 460 BCY78/X 380 630 100 − MHz 400 ns fT transition frequency IC = −10 mA; VCE = −5 V toff turn-off time ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA − 1997 Jun 18 UNIT − BCY79 hFE MAX. open emitter BCY78 VCEO MIN. 2 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCY78 − −32 V BCY79 − −45 V BCY78 − −32 V BCY79 − −45 V −5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation Tamb ≤ 45 °C − 340 mW Tcase ≤ 45 °C − 1 W open collector Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 Jun 18 CONDITIONS in free air 3 VALUE UNIT 450 K/W 150 K/W Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER − −2 −15 nA − − −10 µA IE = 0; VCB = −45 V − −2 −15 nA IE = 0; VCB = −45 V; Tamb = 150 °C − − −10 µA − − −20 nA BCY78/VII; BCY79/VII − 140 − BCY78/VIII; BCY79/VIII 30 200 − IC = 0; VEB = −5 V hFE DC current gain IC = −10 µA; VCE = −5 V VCEsat UNIT IE = 0; VCB = −32 V; Tamb = 150 °C emitter cut-off current hFE MAX. IE = 0; VCB = −32 V IEBO hFE TYP. collector cut-off current BCY79 hFE MIN. collector cut-off current BCY78 ICBO CONDITIONS BCY78/IX; BCY79/IX 40 270 − BCY78/X 100 340 − BCY78/VII; BCY79/VII 120 170 220 BCY78/VIII; BCY79/VIII 180 250 310 BCY78/IX; BCY79/IX 250 350 460 BCY78/X 380 500 630 BCY78/VII; BCY79/VII 80 180 − BCY78/VIII; BCY79/VIII 120 260 400 DC current gain DC current gain IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −1 V BCY78/IX; BCY79/IX 160 360 630 BCY78/X 240 500 1000 BCY78/VII; BCY79/VII 40 − − BCY78/VIII; BCY79/VIII 45 − − BCY78/IX; BCY79/IX 60 − − BCY78/X 60 − − − −120 −250 mV IC = −100 mA; IB = −2.5 mA − −400 −800 mV IC = −10 mA; IB = −250 µA −600 −700 −850 mV IC = −100 mA; IB = −2.5 mA −700 −850 −1200 mV IC = −10 µA; VCE = −5 V − −550 − mV IC = −2 mA; VCE = −5 V −600 −650 −750 mV DC current gain IC = −100 mA; VCE = −1 V collector-emitter saturation voltage IC = −10 mA; IB = −250 µA VBEsat base-emitter saturation voltage VBE base-emitter voltage IC = −10 mA; VCE = −1 V − −650 − mV IC = −100 mA; VCE = −1 V − −750 − mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 7 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − − 15 pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz 1997 Jun 18 4 Philips Semiconductors Product specification PNP switching transistors SYMBOL F BCY78; BCY79 PARAMETER CONDITIONS IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz noise figure MIN. TYP. MAX. UNIT − − 10 dB − − 100 ns − − 50 ns Switching times (between 10% and 90% levels); see Fig.2 ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA; test conditions A ton turn-on time td delay time tr rise time − − 50 ns toff turn-off time − − 700 ns ts storage time − − 600 ns tf fall time − − 100 ns ton turn-on time − − 100 ns td delay time − − 35 ns tr rise time − − 65 ns toff turn-off time − − 400 ns ts storage time − − 300 ns tf fall time − − 100 ns ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA; test conditions B VBB ndbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 Vi DUT R1 MGD624 Test conditions A Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V Oscilloscope input impedance Zi = 50 Ω. Test conditions B Vi = −9.8 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 62 Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω. VBB = 3.4 V; VCC = −10.8 V Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Jun 18 5 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 Jun 18 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 6 Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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