DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX85 PINNING FEATURES • High current (max. 1 A) PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification • Industrial applications. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN transistor in a TO-39 metal package. 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 100 V VCEO collector-emitter voltage open base − − 60 V IC collector current (DC) − − 1 A Ptot total power dissipation Tamb ≤ 25 °C − − 800 mW Tcase ≤ 100 °C − − 2.86 W hFE DC current gain IC = 150 mA; VCE = 10 V 70 142 − fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 − − MHz toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 360 − ns 1997 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor BFX85 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 100 V VCEO collector-emitter voltage open base − 60 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 1 A ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation − 800 mW Tamb ≤ 25 °C Tcase ≤ 25 °C − 5 W 25° C ≤ Tcase ≤ 100 °C − 2.86 W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 200 K/W Rth j-c thermal resistance from junction to case 35 K/W 1997 Apr 22 3 Philips Semiconductors Product specification NPN switching transistor BFX85 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 80 V VBEsat MAX. UNIT − 2 50 nA − 0.1 2.5 µA IE = 0; VCB = 100 V − 10 500 nA IE = 0; VCB = 100 V; Tj = 100 °C − 0.5 30 µA IC = 0; VEB = 5 V − 2 50 nA IC = 0; VEB = 5 V; Tj = 100 °C − 0.1 2.5 µA IC = 0; VEB = 6 V − 10 500 nA IC = 10 mA; VCE = 10 V 50 90 − IC = 150 mA; VCE = 10 V 70 142 − IC = 500 mA; VCE = 10 V 30 90 − 15 50 − − 150 200 mV IC = 150 mA; IB = 15 mA − 150 350 mV IC = 500 mA; IB = 50 mA − 0.35 1 V collector-emitter saturation voltage IC = 10 mA; IB = 1 mA base-emitter saturation voltage TYP. IE = 0; VCB = 80 V; Tj = 100 °C IC = 1 A; VCE = 10 V VCEsat MIN. IC = 1 A; IB = 100 mA − 0.66 1.6 V IC = 10 mA; IB = 1 mA − 0.69 1.2 V IC = 150 mA; IB = 15 mA − 0.92 1.3 V IC = 500 mA; IB = 50 mA − 1.15 1.5 V IC = 1 A; IB = 100 mA − 1.4 2 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 7 12 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 185 − MHz − 55 − ns Switching Times (between 10% and 90% levels) see Fig.2 ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA td delay time − 15 − ns tr rise time − 40 − ns toff turn-off time − 360 − ns ts storage time − 300 − ns tf fall time − 60 − ns 1997 Apr 22 4 Philips Semiconductors Product specification NPN switching transistor BFX85 VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Apr 22 5 oscilloscope Philips Semiconductors Product specification NPN switching transistor BFX85 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 Apr 22 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 6 Philips Semiconductors Product specification NPN switching transistor BFX85 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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