PHILIPS BD231

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD227; BD229; BD231
PNP power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 04
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
FEATURES
PINNING
• High current (max. 1.5 A)
PIN
• Low voltage (max. 80 V).
1
emitter
2
collector, connected to metal part of
mounting surface
3
base
DESCRIPTION
APPLICATIONS
• Driver stages in television circuits.
DESCRIPTION
handbook, halfpage
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD226, BD228 and BD230.
2
3
1
1
Fig.1
2
Top view
3
MAM272
Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
TYP.
MAX.
open emitter
BD227
−
−
−45
V
BD229
−
−
−60
V
BD231
−
−
−100
V
BD227
−
−
−45
V
BD229
−
−
−60
V
BD231
−
−
−80
V
−
−
−3
A
W
collector-emitter voltage
open base
ICM
peak collector current
Ptot
total power dissipation
Tmb ≤ 62 °C
−
−
12.5
hFE
DC current gain
IC = −150 mA; VCE = −2 V
40
−
250
IC = −1 A; VCE = −2 V
25
−
−
IC = −50 mA; VCE = −5 V; f = 100 MHz
−
50
−
fT
1997 Mar 04
UNIT
transition frequency
2
MHz
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BD227
−
−45
V
BD229
−
−60
V
−
−100
V
BD227
−
−45
V
BD229
−
−60
V
−
−80
V
−
−5
V
BD231
VCEO
MIN.
collector-emitter voltage
open base
BD231
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−1.5
A
ICM
peak collector current
−
−3
A
IBM
peak base current
−
−1
A
Ptot
total power dissipation
−
12.5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tmb ≤ 62 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
note 1
Rth j-mb
thermal resistance from junction to mounting base
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
1997 Mar 04
3
VALUE
UNIT
100
K/W
7
K/W
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −30 V
MIN.
TYP. MAX. UNIT
−
−
−100
ICBO
collector cut-off current
IE = 0; VCB = −30 V; Tj = 125 °C
−
−
−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
nA
hFE
DC current gain
VCE = −2 V; see Fig.2
IC = −5 mA
40
−
−
IC = −150 mA
40
−
250
IC = −1 A
25
−
−
nA
VCEsat
collector-emitter saturation voltage
IC = −1 A; IB = −0.1 A
−
−
−0.8
V
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −0.1 A
−
−
−1.1
V
VBE
base-emitter voltage
IC = −1 A; VCE = −2 V; note 1
−
−
−1.3
V
fT
transition frequency
IC = −50 mA; VCE = −5 V; f = 100 MHz −
50
−
MHz
h FE1
----------h FE2
DC current gain ratio of the
complementary pairs
IC = −150 mA; VCE = −2 V
1.3
1.6
−
Note
1.
VBE decreases by about −2.3 mV/K with increasing temperature.
MGD843
120
handbook, full pagewidth
hFE
100
80
60
40
20
0
10−1
1
102
10
VCE = −2 V.
Fig.2 DC current gain; typical values.
1997 Mar 04
4
103
IC (mA)
104
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1
P
D
L1
L
1
2
3
e1
c
w M
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
L
L1(1)
max
Q
P
P1
w
mm
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
4.58
2.29
16.5
15.3
2.54
1.5
0.9
3.2
3.0
3.9
3.6
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT32
1997 Mar 04
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
TO-126
5
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 04
6
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
NOTES
1997 Mar 04
7
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© Philips Electronics N.V. 1997
SCA53
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117047/00/02/pp8
Date of release: 1997 Mar 04
Document order number:
9397 750 01845