DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V). DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits. handbook, halfpage DESCRIPTION NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830. 2 3 1 1 2 3 Fig.1 MAM305 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS TYP. MAX. − − 45 V − − 100 V BD825 − − 45 V BD829 − − 80 V BD829 collector-emitter voltage ICM peak collector current Ptot total power dissipation open base − − 1.5 A Tamb ≤ 25 °C − − 2 W Tmb ≤ 50 °C − − 8 W hFE DC current gain IC = 150 mA; VCE = 2 V 95 − 165 fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz − 250 − 1998 May 29 UNIT open emitter BD825 VCEO MIN. 2 MHz Philips Semiconductors Product specification NPN power transistors BD825; BD829 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BD825 − 45 V BD829 − 100 V BD825 − 45 V BD829 − 80 V − 5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 1 A ICM peak collector current − 1.5 A IBM peak base current − 500 mA Ptot total power dissipation Tamb ≤ 25 °C − 2 W Tmb ≤ 50 °C − 8 W open collector Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-mb thermal resistance from junction to mounting base 1998 May 29 in free air 3 VALUE UNIT 62.5 K/W 12.5 K/W Philips Semiconductors Product specification NPN power transistors BD825; BD829 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − IE = 0; VCB = 30 V TYP. − MAX. UNIT 100 nA ICBO collector cut-off current IE = 0; VCB = 30 V; Tj = 125 °C − − 10 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain VCE = 2 V; see Fig.2 IC = 5 mA 40 − − IC = 150 mA 95 − 165 IC = 500 mA 25 − − VCEsat collector-emitter saturation voltage IC = 500 mA − − 500 mV VBE base-emitter voltage IC = 500 mA; VCE = 2 V − − 1 V fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz − 250 − MHz MBH729 160 handbook, full pagewidth VCE = 2 V hFE 120 80 40 0 10−1 1 10 Fig.2 DC current gain; typical values. 1998 May 29 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN power transistors BD825; BD829 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) SOT128B E1 c1 P P1 HE D L1 L2 L 1 2 3 bp c w M Q e1 A e E 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c c1 D E E1 e e1 HE L L1 L2(1) max P P1 Q w mm 4.6 4.4 0.8 0.6 0.65 0.5 0.56 0.46 8.6 8.4 10.1 9.9 10.4 10.0 5.08 2.54 24.2 23.8 13.3 12.2 2.4 2.0 2.5 3.8 3.6 3.9 3.7 1.7 1.5 0.25 Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B 1998 May 29 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 TO-202 5 Philips Semiconductors Product specification NPN power transistors BD825; BD829 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 May 29 6 Philips Semiconductors Product specification NPN power transistors BD825; BD829 NOTES 1998 May 29 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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