DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 base 3 collector, connected to case DESCRIPTION APPLICATIONS • Industrial high gain amplification. handbook, halfpage 1 3 2 DESCRIPTION 2 NPN Darlington transistor in a TO-39 metal package. PNP complements: BSS61 and BSS62. 3 1 MAM311 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS TYP. MAX. UNIT open emitter BSS50 − − 60 V BSS51 − − 80 V BSS52 − − 90 V BSS50 − − 45 V BSS51 − − 60 V collector-emitter voltage VBE = 0 − − 80 V − − 1 A − − 0.8 W Tcase ≤ 25 °C − − 5 W IC = 500 mA; VCE = 10 V 2000 − − IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − BSS52 IC collector current Ptot total power dissipation hFE DC current gain fT transition frequency 1997 Sep 03 MIN. Tamb ≤ 25 °C 2 MHz Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BSS50 − 60 V BSS51 − 80 V − 90 V BSS50 − 45 V BSS51 − 60 V BSS52 − 80 V − 5 V BSS52 VCES MIN. collector-emitter voltage VBE = 0 VEBO emitter-base voltage IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W Tcase ≤ 25 °C − 5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C open collector THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 Sep 03 CONDITIONS in free air 3 VALUE UNIT 220 K/W 35 K/W Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS BSS50 VBE = 0; VCE = 45 V − − 50 nA BSS51 VBE = 0; VCE = 60 V − − 50 nA BSS52 VBE = 0; VCE = 80 V − − 50 nA − − 50 nA IEBO emitter cut-off current IC = 0; VEB = 4 V DC current gain VCE = 10 V VCEsat − IC = 500 mA 2000 − − − − 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 200 °C − − 1.3 V IC = 1 A; IB = 1 mA − − 1.6 V IC = 1 A; IB = 1 mA; Tj = 200 °C − − 2.3 V collector-emitter saturation voltage IC = 1 A; IB = 4 mA − − 1.6 V IC = 1 A; IB = 4 mA; Tj = 200 °C − − 1.6 V IC = 500 mA; IB = 0.5 mA − − 1.9 V BSS51 IC = 1 A; IB = 1 mA − − 2.2 V BSS50; BSS52 IC = 1 A; IB = 4 mA − − 2.2 V VBEsat base-emitter saturation voltage VBEsat base-emitter saturation voltage fT 1000 − collector-emitter saturation voltage BSS50; BSS52 VBEon IC = 150 mA collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA BSS51 VCEsat TYP. MAX. UNIT collector cut-off current hFE VCEsat MIN. base-emitter on-state voltage transition frequency IC = 150 mA; VCE = 10 V 1.3 − 1.65 V IC = 500 mA; VCE = 10 V 1.4 − 1.75 V IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − MHz ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA − 0.5 − µs ICon = 1 A; IBon = 1 mA; IBoff = −1 mA − 0.4 − µs ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA − 1.3 − µs ICon = 1 A; IBon = 1 mA; IBoff = −1 mA − 1.5 − µs Switching times (between 10% and 90% levels) ton toff turn-on time turn-off time 1997 Sep 03 4 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 seating plane α j w M A M B M B 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A a mm 6.60 6.35 5.08 OUTLINE VERSION SOT5/11 1997 Sep 03 b D D1 j L w α 14.2 12.7 0.2 45° k 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 TO-39 5 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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