DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX35; BDX36; BDX37 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 FEATURES PINNING • High current (max. 5 A) PIN • Low voltage (max. 75 V). DESCRIPTION 1 emitter 2 collector, connected to the metal part of the mounting surface 3 base APPLICATIONS • High-current switching in power applications. DESCRIPTION handbook, halfpage NPN switching transistor in a TO-126; SOT32 plastic package. 2 3 1 1 Fig.1 2 Top view 3 MAM254 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS TYP. MAX. UNIT open emitter − − 100 V − − 120 V BDX35; BDX36 − − 60 V BDX37 − − 75 V BDX35 BDX36; BDX37 VCEO MIN. collector-emitter voltage open base IC collector current (DC) − − 5 A Ptot total power dissipation Tmb ≤ 75 °C − − 15 W hFE DC current gain IC = 0.5 A; VCE = 10 V 45 − 450 fT transition frequency IC = 0.5 A; VCE = 5 V; f = 100 MHz − 100 − MHz toff turn-off time ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A − 350 500 ns 1997 Apr 16 2 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER CONDITIONS collector-base voltage MIN. MAX. UNIT open emitter BDX35 − 100 V BDX36; BDX37 − 120 V BDX35; BDX36 − 60 V BDX37 − 75 V − 5 V collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − 5 A ICM peak collector current − 10 A IBM peak base current − 2 A Ptot total power dissipation Tmb ≤ 75 °C − 15 W Tamb ≤ 25 °C − 1.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient in free air Rth j-mb thermal resistance from junction to mounting base VALUE UNIT 100 K/W 5 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER MIN. TYP. MAX. UNIT IE = 0; VCB = 80 V − − 100 nA IE = 0; VCB = 80 V; Tj = 100 °C − − 10 µA IE = 0; VCB = 100 V − − 100 nA IE = 0; VCB = 100 V; Tj = 100 °C − − 10 µA − − 100 nA BDX35; BDX36 45 130 450 BDX37 45 80 450 − − 900 mV collector cut-off current BDX35 ICBO CONDITIONS collector cut-off current BDX36; BDX37 IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 0.5 A; VCE = 10 V; see Fig.2 VCEsat collector-emitter saturation voltage IC = 5 A; IB = 0.5 A VCEsat collector-emitter saturation voltage 1997 Apr 16 BDX35; BDX37 IC = 7 A; IB = 0.7 A − − 1.2 V BDX36 IC = 10 A; IB = 1 A − − 2 V 3 Philips Semiconductors Product specification NPN switching transistors SYMBOL BDX35; BDX36; BDX37 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IC = 5 A; IB = 0.5 A − − 1.7 V BDX35; BDX37 IC = 7 A; IB = 0.7 A − − 2 V BDX36 IC = 10 A; IB = 1 A − − 2.5 V VBEsat base-emitter saturation voltage VBEsat base-emitter saturation voltage Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 40 60 pF fT transition frequency IC = 0.5 A; VCE = 5 V; f = 100 MHz − 100 − MHz ICon = 1 A; IBon = 0.1 A; IBoff = −0.1 A − 60 100 ns ICon = 2 A; IBon = 0.2 A; IBoff = −0.2 A − − 80 ns ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A − 180 300 ns ICon = 1 A; IBon = 0.1 A; IBoff = −0.1 A − 600 800 ns ICon = 2 A; IBon = 0.2 A; IBoff = −0.2 A − 450 700 ns ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A − 350 500 ns Switching times (between 10% and 90% levels) turn-on time ton turn-off time toff MGD840 80 handbook, full pagewidth hFE 60 40 20 0 10−1 1 102 10 VCE = 1 V. Fig.2 DC current gain; typical values. 1997 Apr 16 4 103 IC (mA) 104 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1997 Apr 16 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 5 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Apr 16 6 Philips Semiconductors Product specification NPN switching transistors BDX35; BDX36; BDX37 NOTES 1997 Apr 16 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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