Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 SYMBOL • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package QUICK REFERENCE DATA VDS = 20 V d ID = 1.05 A RDS(ON) ≤ 250 mΩ (VGS = 2.5 V) g VGS(TO) ≥ 0.4 V s GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. PINNING SOT363 PIN DESCRIPTION 6 1,2,5,6 drain 3 gate 4 source 5 4 Top view 1 The BSH106 is supplied in the SOT363 subminiature surface mounting package. 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) RGS = 20 kΩ IDM Ptot Drain current (pulse peak value) Total power dissipation Tstg, Tj Storage & operating temperature Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 100 ˚C MIN. MAX. UNIT - 55 20 20 ±8 1.05 0.67 4.2 0.417 0.17 150 V V V A A A W W ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-a Thermal resistance junction to ambient FR4 board, minimum footprint 300 - K/W August 1998 1 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH106 ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) Drain-source breakdown voltage Gate threshold voltage CONDITIONS MIN. VGS = 0 V; ID = 10 µA VDS = VGS; ID = 1 mA Tj = 150˚C RDS(ON) gfs IGSS IDSS Drain-source on-state resistance VGS = 4.5 V; ID = 0.6 A VGS = 2.5 V; ID = 0.6 A VGS = 1.8 V; ID = 0.3 A VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C Forward transconductance VDS = 16 V; ID = 0.6 A Gate source leakage current VGS = ±8 V; VDS = 0 V Zero gate voltage drain VDS = 16 V; VGS = 0 V; current Tj = 150˚C TYP. MAX. UNIT 20 - - V 0.4 0.1 0.5 - 0.57 140 180 240 270 1.6 10 50 1.3 200 250 300 375 100 100 10 V V mΩ mΩ mΩ mΩ S nA nA µA Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 1 A; VDD = 20 V; VGS = 4.5 V - 3.9 0.4 1.4 - nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 20 V; ID = 1 A; VGS = 8 V; RG = 6 Ω Resistive load - 2 4.5 45 20 - ns ns ns ns Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 16 V; f = 1 MHz - 152 71 33 - pF pF pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge August 1998 MIN. TYP. MAX. UNIT Ta = 25 ˚C - - 1.05 A IF = 0.5 A; VGS = 0 V - 0.74 4.2 1 A V IF = 0.5 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 16 V - 27 19 - ns nC 2 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH106 Normalised Power Dissipation, PD (%) BSH105 Peak Pulsed Drain Current, IDM (A) 120 1000 100 D = 0.5 100 0.2 80 0.1 60 0.05 10 0.02 40 P D D = tp/T tp single pulse 1 20 T 0 0 25 50 75 100 125 0.1 1E-06 150 1E-05 1E-04 Ambient Temperature, Ta (C) 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ta) Fig.4. Transient thermal impedance. Zth j-a = f(t); parameter D = tp/T Normalised Drain Current, ID (%) Drain Current, ID (A) 5 120 4.5V 4.5 100 2.5V 4 80 3.5 60 2.5 BSH105 Tj = 25 C 2.1 V 3 VGS = 1.9 V 2 40 1.7 V 1.5 20 1.5 V 1 1.3 V 0.5 0 0 25 50 75 100 125 1.1 V 0 150 0 Ambient Temperature, Ta (C) Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V 0.5 1 1.5 Drain-Source Voltage, VDS (V) 2 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS BSH105 Drain-Source On Resistance, RDS(on) (Ohms) 100 Peak Pulsed Drain Current, IDM (A) 0.5 BSH105 1.5 V 0.45 1.7 V 1.9 V 2.1 V 0.4 RDS(on) = VDS/ ID 10 0.35 tp = 100 us 0.3 1 0.1 2.5 V 0.25 1 ms 10 ms 0.2 100 ms 0.15 d.c. VGS = 4.5 V 0.1 0.05 0.01 Tj = 25 C 0 0.1 1 10 Drain-Source Voltage, VDS (V) 100 0 Fig.3. Safe operating area. Ta = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp August 1998 0.5 1 1.5 2 2.5 3 Drain Current, ID (A) 3.5 4 4.5 5 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 3 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor Drain Current, ID (A) BSH106 BSH105 Threshold Voltage, VGS(to), (V) 3 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VDS > ID X RDS(on) 2.5 2 1.5 1 150 C Tj = 25 C 0.5 0 typical minimum 0 0 0.5 1 1.5 2 Gate-Source Voltage, VGS (V) 2.5 25 50 3 75 100 125 Fig.7. Typical transfer characteristics. ID = f(VGS) Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS BSH105 Drain Current, ID (A) Transconductance, gfs (S) 150 Junction Temperature, Tj (C) 1E+00 BSH105 VDS = 5 V Tj = 25 C 4 1E-01 3.5 3 1E-02 2.5 1E-03 2 1E-04 1.5 1 1E-05 0.5 1E-06 0 0 0.5 1 1.5 2 2.5 1E-07 3 0 Drain Current, ID (A) Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID) 0.4 0.6 0.8 Gate-Source Voltage, VGS (V) 1 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C BSH105 Capacitances, Ciss, Coss, Crss (pF) Normalised Drain-Source On Resistance 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.2 1000 RDS(ON) @ Tj RDS(ON) @ 25C 2.5 V Ciss VGS = 4.5 V 100 1.8 V Coss Crss 0 25 50 75 100 125 10 150 0.1 Junction Temperature, Tj (C) Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 ˚C = f(Tj) August 1998 1 10 Drain-Source Voltage, VDS (V) 100 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 4 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH106 BSH105 Gate-source voltage, VGS (V) 10 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 VDD = 20 V RD = 20 Ohms Tj = 25 C 9 8 7 6 5 4 3 2 1 0 0 2 4 Gate charge, QG (nC) 6 Tj = 25 C -0.2 -0.4 -0.6 -0.8 -1 -1.2 Drain-Source Voltage, VSDS (V) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG) August 1998 150 C 0 8 BSH105 Source-Drain Diode Current, IF (A) 5 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH106 MECHANICAL DATA Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 1.1 0.8 OUTLINE VERSION SOT363 A1 max bp c D E 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 e 1.3 e1 HE Lp Q v w y 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION SC-88 ISSUE DATE 97-02-28 Fig.15. SOT363 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". August 1998 6 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH106 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Rev 1.000