DISCRETE SEMICONDUCTORS DATA SHEET PEMB10; PUMB10 PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2001 Sep 14 2003 Oct 03 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ FEATURES PEMB10; PUMB10 QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplified circuit design VCEO TYP. MAX. UNIT collector-emitter voltage − −50 V IO output current (DC) − −100 mA TR1 PNP − − − APPLICATIONS TR2 PNP − − − • Low current peripheral drivers R1 bias resistor 2.2 − kΩ • Replacement of general purpose transistors in digital applications R2 bias resistor 47 − kΩ • Reduction of component count • Reduced pick and place costs. PARAMETER • Control of IC inputs. DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE(1) NPN/PNP COMPLEMENT NPN/NPN COMPLEMENT PHILIPS EIAJ PEMB10 SOT666 − Z5 PEMD10 PEMH10 PUMB10 SOT363 SC-88 B*0 PUMD10 PUMH10 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PEMB10 PUMB10 6 5 6 4 5 R1 4 R2 TR2 TR1 R2 1 2 3 1 Top view 2003 Oct 03 R1 MAM477 2 2 3 DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10; PUMB10 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PEMB10 − plastic surface mounted package; 6 leads SOT666 PUMB10 − plastic surface mounted package; 6 leads SOT363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −10 V VI input voltage positive − +5 V negative − −12 V IO output current (DC) − −100 mA ICM peak collector current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 200 mW SOT666 notes 1 and 2 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 note 1 − 300 mW SOT666 notes 1 and 2 − 300 mW Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2003 Oct 03 3 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10; PUMB10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth j-a Tamb ≤ 25 °C thermal resistance from junction to ambient SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W Per device Rth j-a Tamb ≤ 25 °C thermal resistance from junction to ambient SOT363 note 1 416 K/W SOT666 note 1 416 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −50 V; IE = 0 − − −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 − − −1 μA VCE = −30 V; IB = 0; Tj = 150 °C − − −50 μA μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −180 hFE DC current gain VCE = −5 V; IC = −10 mA 100 − − VCEsat saturation voltage IC = −5 mA; IB = −0.25 mA − − −100 mV Vi(off) input-off voltage VCE = −5 V; IC = −100 μA − −0.6 −0.5 V Vi(on) input-on voltage VCE = −0.3 V; IC = −5 mA −1.1 −0.75 − V R1 input resistor 1.54 2.2 2.86 kΩ R2 -------R1 resistor ratio 17 21 26 Cc collector capacitance − − 3 2003 Oct 03 IE = ie = 0; VCB = −10 V; f = 1 MHz 4 pF NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10; PUMB10 PACKAGE OUTLINES Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 Oct 03 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10; PUMB10 Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 Oct 03 REFERENCES IEC JEDEC EIAJ SC-88 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ PEMB10; PUMB10 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Oct 03 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp8 Date of release: 2003 Oct 03 Document order number: 9397 750 11798