PHILIPS PHD14NQ20T

PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
Rev. 03 — 11 March 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP14NQ20T in SOT78 (TO-220AB)
PHB14NQ20T in SOT404 (D2-PAK)
PHD14NQ20T in SOT428 (D-PAK).
1.2 Features
■ Low on-state resistance
■ Fast switching
1.3 Applications
■ DC to DC converters
■ General purpose switching
1.4 Quick reference data
■ VDS = 200 V
■ RDSon ≤ 230 mΩ
■ ID = 14 A
■ PD = 125 W
2. Pinning information
Table 1:
Pinning - SOT78, SOT404, SOT428, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base,
connected to
drain (d)
Simplified outline
[1]
Symbol
mb
mb
d
mb
g
MBB076
2
2
1
1
3
MBK116
Top view
3
MBK091
MBK106
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
SOT428 (D-PAK)
s
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage
ID
drain current (DC)
Conditions
Min
Max
Unit
-
200
V
-
200
V
-
±20
V
Tmb = 25 °C
-
14
A
Tmb = 100 °C
-
10
A
Tj = 25 to 175
oC
Tj = 25 to 175
oC;
RGS = 20 kΩ
VGS = 10 V; Figure 2 and 3
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
56
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
125
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb = 25 °C
-
14
A
ISM
peak source (diode forward) current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
56
A
EDS(ALS) non-repetitive avalanche energy
-
70
mJ
IDS(ALM)
-
14
A
Avalanche ruggedness
unclamped inductive load; ID = 14 A;
t
peak non-repetitive avalanche current p = 20 µs; VDD ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C;
Figure 15
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
2 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
03aa16
120
03aa24
120
Pder
I der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
0
200
o
Tmb ( C)
50
100
150
200
o
Tmb ( C)
VGS ≥ 10 V
P tot
P der = ----------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa219
103
ID
(A)
RDSon = VDS / ID
102
tp =
1 µs
10 µs
10
100 µs
1 ms
DC
10 ms
100 ms
1
10-1
1
102
10
VDS (V)
103
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
3 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ
Max Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
Figure 4
-
-
1.2
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
-
60
-
K/W
SOT404 and SOT428 packages;
SOT404 minimum footprint; mounted on
a PCB
50
-
K/W
4.1 Transient thermal impedance
003aaa220
10
Zth (j-mb)
(K/W)
1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
10-1
δ=
P
δ = 0.02
single pulse
tp
T
t
tp
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
4 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
5. Characteristics
Table 4:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
ID = 250 µA; VGS = 0 V
Tj = 25 °C
200
-
-
V
Tj = −55 °C
178
-
-
V
ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
6
V
Tj = 25 °C
-
0.05
10
µA
Tj = 175 °C
-
-
500
µA
-
10
100
nA
Tj = 25 °C
-
150
230
mΩ
Tj = 175 °C
-
-
633
mΩ
VDS = 200 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 7 A;
Figure 7 and 8
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; ID = 7 A;
Figure 14
6
12.1
-
S
Qg(tot)
total gate charge
-
38
-
nC
Qgs
gate-source charge
ID = 14 A; VDD = 160 V;
VGS = 10 V; Figure 13
-
4
-
nC
Qgd
gate-drain (Miller) charge
-
13.3
-
nC
Ciss
input capacitance
-
1500
-
pF
Coss
output capacitance
-
128
-
pF
Crss
reverse transfer capacitance
-
60
-
pF
td(on)
turn-on delay time
-
25
-
ns
tr
rise time
td(off)
turn-off delay time
tf
fall time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 11
VDD = 30 V; RD = 10 Ω;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
40
-
ns
-
83
-
ns
-
31
-
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 14 A; VGS = 0 V;
Figure 12
-
1.0
1.5
V
trr
reverse recovery time
-
135
-
ns
Qr
recovered charge
IS = 14 A;
dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
-
690
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
5 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
003aaa221
30
ID
003aaa223
30
VGS = 10 V
ID
(A)
(A)
24
6V
20
16
5.5 V
Tj = 175 οC
10
8
Tj = 25 οC
5V
4.5 V
0
0
0
2
4
6
8
10
VDS (V)
Tj = 25 °C
0
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aaa222
0.8
4.5 V
8
VGS (V)
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
RDSon
6
4
2
5.5 V
5V
003aaa225
3
a
(Ω)
2.5
0.6
2
0.4
6V
1.5
VGS = 10 V
0.2
1
0
0.5
0
5
10
15
20
ID (A)
Tj = 25 °C
-60
100
Tj (οC)
180
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
20
Rev. 03 — 11 March 2002
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PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
003aaa226
5
03aa35
10-1
ID
(A)
VGS(th)
(V)
10-2
4
max
min
10-3
3
typ
max
typ
2
10-4
min
10-5
1
10-6
0
-100
0
100
Tj (οC)
200
0
2
4
6
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
003aaa227
104
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
003aaa229
30
IS
(A)
C
(pF)
Ciss
103
20
Tj = 175 οC
Coss
10
102
Crss
Tj = 25 οC
0
10
0
10
20
30
40
0
0.4
0.8
VDS (V)
1.2
Tj = 25 °C and 175 °C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
VSD (V)
Rev. 03 — 11 March 2002
7 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
003aaa224
003aaa228
12
20
gfs
VGS
(S)
(V)
16
VDD = 40 V
8
12
VDD = 160 V
8
4
4
0
0
10
20
0
30
40
QG (nC)
0
10
20
30
ID (A)
ID = 15 A; VDD = 40 V and 160 V
VDS = 25 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
Fig 14. Forward transconductance as a function of
drain current; typical values.
003aaa230
102
IAS
(A)
10
1
10-1
10-3
ο
25 C
Tj prior to avalanche = 150 οC
10-2
10-1
1
10
tp (ms)
Unclamped inductive load; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C and 150 °C
Fig 15. Non-repetitive avalanche ruggedness current as a function of pulse duration; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
8 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
00-09-07
01-02-16
Fig 16. SOT78 (TO-220AB).
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
9 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
SOT404
Fig 17. SOT404 (D2-PAK).
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9397 750 09535
Product data
Rev. 03 — 11 March 2002
10 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A2
A
A1
b2
E1
mounting
base
D1
D
HE
L2
2
L1
L
1
3
b1
w M A
b
c
e
e1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1(1)
A2
b
b1
b2
c
D
D1
min.
E
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.0
6.73
6.47
E1
e
e1
4.81 2.285 4.57
4.45
HE
L
L1
min.
L2
w
y
max.
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
01-12-11
Fig 18. SOT428 (D-PAK).
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
11 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
7. Revision history
Table 5:
Revision history
Rev Date
03
20020311
CPCN
Description
Product data; third version. Supersedes data of 6 March 2002.
Modifications:
•
02
20020306
Product data; second version.Supersedes initial version of 1 October 1999.
Modifications:
•
01
19991001
Correction to product title: PHD14NQ20T.
PHD14NQ20T added.
Product data; initial version
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9397 750 09535
Product data
Rev. 03 — 11 March 2002
12 of 14
PHP/PHB/PHD14NQ20T
Philips Semiconductors
TrenchMOS™ standard level FET
8. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
9. Definitions
10. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
11. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09535
Rev. 03 — 11 March 2002
13 of 14
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 11 March 2002
Document order number: 9397 750 09535