INFINEON Q67000

FM-Sound IF with SCART Switch
and Volume Control
TBA 121-5
Bipolar IC
Features
●
●
●
●
Outstanding limiting qualities
Few external components
Integrated de-emphasis resistor
Low harmonic distortion factor
P-DIP-16
Type
Ordering Code
Package
TBA 121-5
Q67000-A5137
P-DIP-16
Functional Description
FM-IF amplifier, consisting in a limiter amplifier with FM demodulator. The AF section contains a
SCART-record/playback switch as well as AF output with volume control. The control of the volume
is controlled via an analog control input, and the SCART switch is controlled via a switch input.
Application
Application of the IC is intended in mono TV sets.
Circuit Description
In its FM section, the component contains an eight stage, symmetrical limiter amplifier with
subsequent coincidence demodulator. The AF section contains an analog switch for the SCARTrecording / playback function as well as an analog volume control with AF output.
Semiconductor Group
91
06.94
TBA 121-5
Pin Functions
Pin No.
Function
1
Ground
2
Limiter amplifier operating point feedback
(RF decoupling of IF amplifier with appropriate capacitors is required!)
3
Limiter amplifier operating point feedback and low end
(RF decoupling of IF amplifier with appropriate capacitors is required!)
4
IF-amplifier output (emitter follower)
5
IF-amplifier output (emitter follower)
6
Demodulator input with high impedance input and internal 15 kΩ supply resistor
(if an LC circuit is used, the Q is determined by the damping resistance across
pins 6 and 7)
7
Demodulator input with high impedance input and internal 15 kΩ supply resistor
(if an LC circuit is used, the Q is determined by the damping resistance across
pins 6 and 7)
8
Connection for de-emphasis capacitor (a series resistor of 11 kΩ is integrated)
9
AF output of the SCART interface (emitter follower with short circuit limiter)
10
AF input 1 of the SCART interface (IF branch)
11
Rec/Pb switch input
12
AF input 2 of the SCART interface (SCART input)
13
Volume control
14
IF output (emitter follower)
15
+ VS supply voltage
16
IF input (limiter amplifier input; internal resistor between pin 16 and 3 typ. 800 Ω)
Semiconductor Group
92
TBA 121-5
Expanded Block Diagram, Part 1
Semiconductor Group
93
TBA 121-5
Expanded Block Diagram, Part 2
Semiconductor Group
94
TBA 121-5
Block Diagram
Semiconductor Group
95
TBA 121-5
Absolute Maximum Ratings
TA = 0 to 70 ˚C
Parameter
Symbol
Limit Values
min.
max.
Unit
Supply voltage
VS
0
16
V
IF-input voltage
VI 16 rms
0
600
mVrms
DC voltage
DC voltage
DC voltage
DC voltage
DC voltage
DC voltage
DC voltage
DC voltage
DC voltage
DC voltage
V2
V3
V6
V7
V8
V9
V11
V12
V13
V16
0
0
0
0
0
0
0
0
0
0
VREF
VREF
VS
VS
VS-2
VREF
VS
VS
VS
VREF
V
V
V
V
V
V
V
V
V
V
DC current
DC current
DC current
DC current
I4
I5
I9
I14
0
0
–1
–1
2
2
2
2
mA
mA
mA
mA
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
125
˚C
Thermal resistance
(system-air)
Rth SA
80
K/W
– 55
Operating Range
Supply voltage
VS
10.5
15.75
V
Frequency range
f
0.1
12
MHz
Ambient temperature in operation
TA
0
70
˚C
Semiconductor Group
96
TBA 121-5
Characteristics
TA = 0 to 70 ˚C; VS = 10.5 to 15.5 V; refer to test circuit
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
21
29
37
mA
60
100
µV
f I 16 = 5.5 MHz;
∆ f = 30 kHz;
f mod = 1 kHz
Current consumption
IS
Input voltage for
limiting response
(VQ 9, 14 = – 3 dB)
VI 16 rms
SCART-output voltage
VQ 9
500
650
mV
V I 16 = 10 mV;
∆ f = 30 kHz;
f mod = 1kHz
f I 16 = 5.5 MHz
AF-output voltage
VQ 14
450
650
mV
V13 = 4.8 V;
∆ f = 30 kHz;
f mod = 1 kHz;
f I 16 = 5.5 MHz
DC component
VQ 9
VQ 14
4.8
6
V
V
V I 16 = 10 mV;
∆f=0
THD = THD min
%
%
∆ f = 30 kHz;
V I 16 = 10 mV;
f mod = 1 kHz
f I 16 = 5.5 MHz
V13 = 4.8 V
dB
V I 16 = 500 µV;
m = 30%;
f mod = 1 kHz;
f I 16 = 5.5 MHz;
∆ f = 30 kHz;
V I 16 = 10 mV
80
dB
V13 = 5-0 V
2
Vrms
Total distortion factor
THD 9
THD 14
AM suppression
(test conditions for
reference point)
a AM9, 14
50
Volume control range
V14
Maximum SCARTinput voltage
VI 12
Gain between SCART
input (pin 10) and
AF output (pin 14)
GSC
1
1.1
60
0
dB
Switching Voltage, Muting
ON (AF OFF)
OFF
Semiconductor Group
V3
V3
VS
8
0
3
97
V
V
V11 ≥ 8 V ≤ 12 V
V13 = 4.8 V
TBA 121-5
Characteristics (cont’d)
TA = 0 to 70 ˚C; VS = 10.5 to 15.5 V; refer to test circuit
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Condition
max.
Design Notes
Input resistance
R I 6, 7
Output resistance
RQ9
100
Ω
Output resistance
R Q 14
200
Ω
Input resistance
R I 10, 12
Input impedance
Z I 16
Residual IF voltage
VQ 9, 14 (IF)
Hum suppression
VS/VQ 9, 14 (without
de-emphasis C)
a qh
Crosstalk attenuation
(test conditions for
reference point)
a 12-14
Attenuation IF MUTE
a 14
10
kΩ
20
kΩ
Ω
800
10
mV
dB
∆ V S = 500 mVrms
f S = 100 Hz
60
dB
V 12 = 2 Vrms;
RF mode: ∆ f = 30 kHz;
f mod = 1 kHz;
f I 16 = 5.5 MHz
V I 16 = 10 mV
80
dB
f I 16 = 5.5 MHz;
V13 = 4.8 V; V I 16 = 300
mV; f mod = 1 kHz;
∆ f = 30 kHz;
30
IF MUTE = ON;
measured
selectively
at 1 kHz
Semiconductor Group
98
TBA 121-5
Test Circuit
Semiconductor Group
99
TBA 121-5
Volume
Application Circuit
Semiconductor Group
100