FM-Sound IF with SCART Switch and Volume Control TBA 121-5 Bipolar IC Features ● ● ● ● Outstanding limiting qualities Few external components Integrated de-emphasis resistor Low harmonic distortion factor P-DIP-16 Type Ordering Code Package TBA 121-5 Q67000-A5137 P-DIP-16 Functional Description FM-IF amplifier, consisting in a limiter amplifier with FM demodulator. The AF section contains a SCART-record/playback switch as well as AF output with volume control. The control of the volume is controlled via an analog control input, and the SCART switch is controlled via a switch input. Application Application of the IC is intended in mono TV sets. Circuit Description In its FM section, the component contains an eight stage, symmetrical limiter amplifier with subsequent coincidence demodulator. The AF section contains an analog switch for the SCARTrecording / playback function as well as an analog volume control with AF output. Semiconductor Group 91 06.94 TBA 121-5 Pin Functions Pin No. Function 1 Ground 2 Limiter amplifier operating point feedback (RF decoupling of IF amplifier with appropriate capacitors is required!) 3 Limiter amplifier operating point feedback and low end (RF decoupling of IF amplifier with appropriate capacitors is required!) 4 IF-amplifier output (emitter follower) 5 IF-amplifier output (emitter follower) 6 Demodulator input with high impedance input and internal 15 kΩ supply resistor (if an LC circuit is used, the Q is determined by the damping resistance across pins 6 and 7) 7 Demodulator input with high impedance input and internal 15 kΩ supply resistor (if an LC circuit is used, the Q is determined by the damping resistance across pins 6 and 7) 8 Connection for de-emphasis capacitor (a series resistor of 11 kΩ is integrated) 9 AF output of the SCART interface (emitter follower with short circuit limiter) 10 AF input 1 of the SCART interface (IF branch) 11 Rec/Pb switch input 12 AF input 2 of the SCART interface (SCART input) 13 Volume control 14 IF output (emitter follower) 15 + VS supply voltage 16 IF input (limiter amplifier input; internal resistor between pin 16 and 3 typ. 800 Ω) Semiconductor Group 92 TBA 121-5 Expanded Block Diagram, Part 1 Semiconductor Group 93 TBA 121-5 Expanded Block Diagram, Part 2 Semiconductor Group 94 TBA 121-5 Block Diagram Semiconductor Group 95 TBA 121-5 Absolute Maximum Ratings TA = 0 to 70 ˚C Parameter Symbol Limit Values min. max. Unit Supply voltage VS 0 16 V IF-input voltage VI 16 rms 0 600 mVrms DC voltage DC voltage DC voltage DC voltage DC voltage DC voltage DC voltage DC voltage DC voltage DC voltage V2 V3 V6 V7 V8 V9 V11 V12 V13 V16 0 0 0 0 0 0 0 0 0 0 VREF VREF VS VS VS-2 VREF VS VS VS VREF V V V V V V V V V V DC current DC current DC current DC current I4 I5 I9 I14 0 0 –1 –1 2 2 2 2 mA mA mA mA Junction temperature Tj 150 ˚C Storage temperature Tstg 125 ˚C Thermal resistance (system-air) Rth SA 80 K/W – 55 Operating Range Supply voltage VS 10.5 15.75 V Frequency range f 0.1 12 MHz Ambient temperature in operation TA 0 70 ˚C Semiconductor Group 96 TBA 121-5 Characteristics TA = 0 to 70 ˚C; VS = 10.5 to 15.5 V; refer to test circuit Parameter Symbol Limit Values Unit Test Condition min. typ. max. 21 29 37 mA 60 100 µV f I 16 = 5.5 MHz; ∆ f = 30 kHz; f mod = 1 kHz Current consumption IS Input voltage for limiting response (VQ 9, 14 = – 3 dB) VI 16 rms SCART-output voltage VQ 9 500 650 mV V I 16 = 10 mV; ∆ f = 30 kHz; f mod = 1kHz f I 16 = 5.5 MHz AF-output voltage VQ 14 450 650 mV V13 = 4.8 V; ∆ f = 30 kHz; f mod = 1 kHz; f I 16 = 5.5 MHz DC component VQ 9 VQ 14 4.8 6 V V V I 16 = 10 mV; ∆f=0 THD = THD min % % ∆ f = 30 kHz; V I 16 = 10 mV; f mod = 1 kHz f I 16 = 5.5 MHz V13 = 4.8 V dB V I 16 = 500 µV; m = 30%; f mod = 1 kHz; f I 16 = 5.5 MHz; ∆ f = 30 kHz; V I 16 = 10 mV 80 dB V13 = 5-0 V 2 Vrms Total distortion factor THD 9 THD 14 AM suppression (test conditions for reference point) a AM9, 14 50 Volume control range V14 Maximum SCARTinput voltage VI 12 Gain between SCART input (pin 10) and AF output (pin 14) GSC 1 1.1 60 0 dB Switching Voltage, Muting ON (AF OFF) OFF Semiconductor Group V3 V3 VS 8 0 3 97 V V V11 ≥ 8 V ≤ 12 V V13 = 4.8 V TBA 121-5 Characteristics (cont’d) TA = 0 to 70 ˚C; VS = 10.5 to 15.5 V; refer to test circuit Parameter Symbol Limit Values min. typ. Unit Test Condition max. Design Notes Input resistance R I 6, 7 Output resistance RQ9 100 Ω Output resistance R Q 14 200 Ω Input resistance R I 10, 12 Input impedance Z I 16 Residual IF voltage VQ 9, 14 (IF) Hum suppression VS/VQ 9, 14 (without de-emphasis C) a qh Crosstalk attenuation (test conditions for reference point) a 12-14 Attenuation IF MUTE a 14 10 kΩ 20 kΩ Ω 800 10 mV dB ∆ V S = 500 mVrms f S = 100 Hz 60 dB V 12 = 2 Vrms; RF mode: ∆ f = 30 kHz; f mod = 1 kHz; f I 16 = 5.5 MHz V I 16 = 10 mV 80 dB f I 16 = 5.5 MHz; V13 = 4.8 V; V I 16 = 300 mV; f mod = 1 kHz; ∆ f = 30 kHz; 30 IF MUTE = ON; measured selectively at 1 kHz Semiconductor Group 98 TBA 121-5 Test Circuit Semiconductor Group 99 TBA 121-5 Volume Application Circuit Semiconductor Group 100