TBA 229-5 Dual Sound FM IF Amplifier TBA 229-5 Bipolar IC Features High AM suppression over a very wide input voltage range High sensitivity Very high symmetry P-DIP-16 The component contains two separate limiter amplifiers with FM demodulators and separate AF outputs. Type Ordering Code Package TBA 229-5 Q67000-A5133 P-DIP-16 Circuit Description The component contains two separate FM sound IF sections for television stereo applications or for multistandard receivers. Each FM section consists of an eight-stage symmetrical limiter amplifier followed by a coincidence demodulator and an AF pre-amplifier with a low-ohmic output. The component features considerably improved AM suppression characteristics with small input signals, as well as a very low frequency deviation between THD min and AM min. Semiconductor Group 1 01.93 TBA 229-5 Absolute Maximum Ratings Parameter Supply voltage Reference current IF input voltage DC voltages DC currents Junction temperature Storage temperature range Thermal resistance (system-air) Symbol Limit Values Unit min. max. VS I REF VI IF rms V 9, 10, 11 V 14, 15, 16 I 1, 2, 4, 5, 7, 8 Tj T stg R th SA 0 0 0 0 0 0 16 2 600 V REF V REF 2 150 125 80 V mA mV V V mA ˚C ˚C K/W VS TA fI 10.5 0 0.1 15.75 70 12 V ˚C MHz – 40 Operating Range Supply voltage Ambient temperature Frequency Semiconductor Group 2 TBA 229-5 Characteristics V S = 12 V; T A = 25 ˚C; VI IF 14 rms = 10 mV; fI IF 11, 14 = 5.5 MHz; f mod = 1 kHz; ∆ f = ± 30 kHz (if not stated otherwise) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Current consumption I S Input voltage for limiter threshold 25 VI 11 rms VI 14 rms 35 42 mA 50 50 100 100 µV µV VQ 4, 5 = – 3 dB Output voltage VQ 4 rms VQ 5 rms 510 510 600 600 700 700 mV mV DC voltage portion VQ 4 = VQ 5 = 4.8 4.8 6 6 6.2 6.2 V V ∆f 0.4 0.8 % THD = THD min dB dB VI rms=1 mV; m = 30% Total harmonic distortion THD 4,THD α AM 4 AM suppression V i rms =1 mV; m = 30% α AM 5 5 55 55 60 60 = 0; THD = THD min Cross-talk rejection Reference voltage C IF 1-2 = VQ 4/ 60 VQ 5 dB C IF 1-2 = VQ 4/ 60 VQ 5 dB V 13 = Switching voltage muting ON (AF off) V 16 V 16 OFF Design-Related Values 5.4 6 8 0 6.6 V VS 3 V V kΩ kΩ 20 20 Input resistance R I 1, 2 R I 7, 8 Output resistance R Q 4, 5 Input impedance Z I11, 14 800 Ω IF residual voltage VQ 4, 5 (IF) 15 mV Hum suppression α Q hum 32 dB Frequency deviation AM min – THD min ∆ f IF ±10 kHz Semiconductor Group fI IF 11 = 5.5 MHz; ∆ f 11 = 0 kHz; VI 11 rms = 4 mV; VI 14 rms =10 mV fI IF 11 = 5.74 MHz; ∆ f 14 = 0 kHz VI 11 rms = 4 mV; VI 14 rms =10 mV 100 3 Ω fS = 100 Hz ∆VS rms = 500 mV; VS/VQ 4; VS/ VQ5 TBA 229-5 Block Diagram Semiconductor Group 4 TBA 229-5 Pin Functions Pin No. Function 1, 2 Demodulator tank circuit connection IF 1 (high impedance input – slope of S-curve can be determined by external resistor between pins 1 and 2) 3 GND 4 AF output IF 1 (emitter follower) 5 AF output IF 2 (emitter follower) 6 Supply voltage 7, 8 Demodulator tank circuit connection IF 2 (high impedance input – slope of S-curve can be determined by external resistor between pins 1 and 2) 9 Operating point feedback of limiter amplifier and low end IF 2 (RF decoupling of IF amplifiers with appropriate capacitors is required! 10 Operating point feedback of limiter amplifier IF 2 (RF decoupling of IF amplifiers with appropriate capacitors is required!) 11 IF 2 input (input of limiter amplifier IF 2; internal resistor between pins 9 and 11 is typ. 800 Ω) 12 GND 13 Internal reference voltage (typ. 6 V) 14 IF 1 input (input of limiter amplifier IF 2; internal resistor between pins 14 and 15 is typ. 800 Ω) 15 Operating feedback of limiter amplifier IF 1 (RF decoupling of IF amplifiers with appropriate capacitors is required!) 16 Operating point feedback of limiter amplifier and low end IF 1 (RF decoupling of IF amplifiers with appropriate capacitors is required!) Semiconductor Group 5 TBA 229-5 Diagrams AF Output Voltage, Total Harmonic Distortion, Circuit Voltage versus Circuit Q B V Q: THD: Measured at: VQ 4 rms; VQ 5 rms THD 4; THD 5 fI IF = 5.5 MHz; ∆f = 30 kHz; f mod = 1 kHz; VI IF = 10 mV V cct: Measured at: V 1, 2 = V 7, 8 fI IF = 5.5 MHz; ∆f = 0 kHz; VI Q B: Measured at: Q between connections 1, 2 and 7, 8 f I IF = 5.5 MHz/∆f I IF for 3 dB bandwidth, ∆f = 0 kHz; VI Circuit: L = 10 turns 0.25 CuL; Vogt Coil Assembly 517 12 000 00 without cap C = 1 nF STYROFLEX Capacitor Semiconductor Group 6 IF = 10 mV IF = 10 mV TBA 229-5 Tank Voltage versus f IF Semiconductor Group 7 TBA 229-5 Tank Voltage versus f IF Semiconductor Group 8 TBA 229-5 Total Harmonic Distortion versus Detuning (FM Operation) THD 4 = f (f I IF); VI= 10 mV; V S = 12 V; f mod = 1 kHz, ∆f = 50 kHz, 30 kHz, 12.5 kHz Semiconductor Group 9 TBA 229-5 Total Harmonic Distortion versus Detuning (FM Operation) compensated for minimum total harmonic distortion at f IF = 5.5 MHz; THD = f (fI IF); VI = 10 mV; V S = 12 V; f mod = 1 kHz, ∆f = 50 kHz; 30 kHz; 12.5 kHz Semiconductor Group 10 TBA 229-5 Test Circuit Semiconductor Group 11 TBA 229-5 Application Circuit L = 10 turns 0.2 CuL; Q B approx. 25 e.g. Vogt Coil Assembly 517 12 000 00 Semiconductor Group 12