DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to the case • General purpose switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 Fig.1 1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −45 V ICM peak collector current − −200 mA mW Ptot total power dissipation Tamb ≤ 25 °C − 300 hFE DC current gain IC = −2 mA; VCE = −5 V 125 500 fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − 1997 Jun 04 2 MHz Philips Semiconductors Product specification PNP general purpose transistor BC177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA − 300 mW Tamb ≤ 25 °C Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case CONDITIONS note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Jun 04 3 VALUE UNIT 0.5 K/mW 0.2 K/mW Philips Semiconductors Product specification PNP general purpose transistor BC177 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −20 V − −1 −15 nA ICBO collector cut-off current IE = 0; VCB = −20 V; Tj = 150 °C − − −10 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − 50 nA hFE DC current gain IC = −2 mA; VCE = −5 V 125 140 500 hFE DC current gain IC = −2 mA; VCE = −5 V BC177A 125 180 260 BC177B 240 290 500 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA − −250 − mV IC = −10 mA; IB = −0.5 mA − −700 − mV VBEsat base-emitter saturation voltage IC = −100 mA; IB = −5 mA − −850 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V; note 1 −600 −650 −750 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 4 6 pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 10 dB Note 1. VBE decreases by about −2 mV/K with increasing temperature. 1997 Jun 04 4 − Philips Semiconductors Product specification PNP general purpose transistor BC177 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 Jun 04 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 5 Philips Semiconductors Product specification PNP general purpose transistor BC177 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 04 6 Philips Semiconductors Product specification PNP general purpose transistor BC177 NOTES 1997 Jun 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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