PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features ■ Fast switching ■ Very low on-state resistance. 3. Applications ■ General purpose switching ■ Switched mode power supplies. c 4. Pinning information c Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol mb mb [1] d g 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. MBB076 s Philips Semiconductors PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C − 55 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V − 75 A Ptot total power dissipation Tmb = 25 °C − 200 W Tj junction temperature − 175 °C RDSon drain-source on-state resistance 7.2 8 mΩ Min Max Tj = 25 °C; VGS = 10 V; ID = 25 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C − 55 V VDGR drain-gate voltage (DC) Tj = 25 to 175 °C; RGS = 20 kΩ − 55 V VGS gate-source voltage (DC) − ±20 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V Figure 2 and 3 − 75 A Tmb = 100 °C; VGS = 10 V Figure 2 and 3 − 52.5 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 400 A Tmb = 25 °C; Figure 1 Ptot total power dissipation − 200 W Tstg storage temperature −55 175 °C Tj operating junction temperature −55 175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C − 75 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs − 400 A unclamped inductive load; IAS = 60 A; tp = 0.1 ms; VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; starting Tj = 25 °C; Figure 4 − 360 mJ Avalanche ruggedness EAS non-repetitive avalanche energy © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 2 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa24 03aa16 120 Pder 120 Ider (%) (%) 100 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 200 0 Tmb (oC) 25 50 75 100 125 150 175 200 Tmb (oC) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. RDSon = VDS / ID IAS tp = 25 oC (A) 1 µs 10 µs 102 100 µs 10 Tj prior to avalanche = 150 oC 1 ms 10 003aaa080 102 003aaa069 103 ID (A) Fig 2. Normalized continuous drain current as a function of mounting base temperature. δ= P tp DC 10 ms T 0.1 s t tp 1 T 1 1 10 VDS (V) 10-3 102 Tmb = 25 °C; IDM is single pulse. 10-1 1 10 tp ms Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω; VGS = 5 V; starting Tj = 25 °C and 150 °C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification 10-2 Rev. 01 — 07 March 2001 3 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting Figure 5 base Rth(j-a) thermal resistance from junction to ambient Value Unit 0.75 K/W SOT78 package; vertical in still air 60 K/W SOT404 package; mounted on printed circuit board; minimum footprint. 50 K/W 7.1 Transient thermal impedance 003aaa070 10 Zth (j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 δ= P 0.02 Single Pulse tp T 10-2 t tp 10-3 10-7 T 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 4 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V 55 − − V Tj = 25 °C 2.0 3.0 4.0 V Tj = 175 °C 1.0 − − V Tj = 25 °C − 0.05 10 µA Tj = 175 °C − − 500 µA − 2 100 nA Tj = 25 oC − 7.2 8.0 mΩ Tj = 175 °C − − 16 mΩ − 87 − nC − 24 − nC − 29 − 3264 4352 pF − 720 863 pF − 389 533 pF Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 10 IDSS drain-source leakage current VGS = 0 V; VDS = 55 V IGSS gate-source leakage current VDS = 0 V; VGS = ±20 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 8 and 9 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf ID = 50 A; VDD = 44 V; VGS = 10 V; Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 nC − 24 36 ns − 94 141 ns turn-off delay time − 100 140 ns fall time − 80 112 ns VDD = 30 V; RD = 1.2 Ω; VGS = 5 V; RG = 10 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 14 − 0.85 1.2 V trr reverse recovery time − 65 − ns Qr recovered charge IS = 75 A; dIS/dt = −100 A/µs; VGS = -10 V; VR = 30 V − 0.17 − µC © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 5 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa074 003aaa071 160 18 V ID (A) 140 7.0 V 10 V ID 90 (A) 80 8.0 V 6.5 V 120 100 70 100 60 6.0 V 50 80 60 40 5.5 V Tj = 25 oC 30 40 20 5.0 V 20 VGS = 4.5 V 10 0 0 2 4 6 0 8 10 VDS (V) Tj = 25 °C 0 1 2 3 4 5 6 7 VGS (V) Tj = 25 °C and 175 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aaa076 003aaa072 2.0 25 RDSon Tj = 175 oC VGS = 5.5 V 23 a 6.0 V 1.8 (mΩ) 21 1.6 19 1.4 17 1.2 1.0 15 6.5 V 13 0.8 0.6 7.0 V 11 7.5 V 8.0 V 9.0 V 9 0.4 0.2 7 10.0 V 5 5 25 45 65 85 105 0 -80 125 Tj = 25 °C 0 40 80 120 160 200 R DSon a = --------------------------R DSon ( 25 °C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification -40 Tj (oC) ID (A) Rev. 01 — 07 March 2001 6 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa077 5 ID (A) VGS(th) (V) max. 4 003aaa078 10-1 10-2 3 typ 10-3 2 min 10-4 2% typ 98% 10-5 1 10-6 0 -80 -40 0 40 80 120 160 200 0 1 2 3 4 5 VGS (V) Tj (oC) Tj = 25 °C ID = 1 mA; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. 003aaa075 003aaa079 60 7 Ciss, Coss, 6 Crss gfs (S) 50 (nF) 5 40 Ciss Coss 4 30 Crss 3 20 2 10 1 0 0 20 40 60 80 0 100 10-2 ID (A) Tj = 25 °C; VDS = 25 V 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification 10-1 Rev. 01 — 07 March 2001 7 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa081 10 003aaa082 100 ID = 50 A Tj = 25 oC VGS (V) 8 IS 90 (A) 80 70 VDD = 44 V Tj = 150 oC 60 VDD = 14 V 6 50 4 40 30 Tj = 25 oC 20 2 10 0 0 0 0.2 0.4 0.6 0.8 0 1.0 1.2 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V 40 60 80 100 QG (nC) ID = 50 A; VDD = 14 V and 44 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification 20 Rev. 01 — 07 March 2001 8 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 16. SOT78 © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 9 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 SOT404 Fig 17. SOT404 (D2-PAK). © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 10 of 14 Philips Semiconductors PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 01 20010307 CPCN Description - Product specification. Initial version. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 11 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2001 All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 12 of 14 PHP112N06T; PHB112N06T Philips Semiconductors N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. 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All rights reserved. 9397 750 08108 Product specification Rev. 01 — 07 March 2001 13 of 14 Philips Semiconductors PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 07 March 2001 Document order number: 9397 750 08108