DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL, etc. Drain-source voltage VDS max. 200 V Gate-source voltage (open drain) ± VGSO max. 20 V • High-speed switching Drain current (DC) ID max. 250 mA • No second breakdown Total power dissipation up to Tcase = 25 °C Ptot max. 0.6 W RDS(on) typ. max. 4.5 Ω 6.4 Ω Yfs min. typ. 200 mS 350 mS Drain-source ON-resistance DESCRIPTION ID = 250 mA; VGS = 10 V N-channel enhancement mode vertical D-MOS transistor in TO-92 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. Transfer admittance ID = 250 mA; VGS = 25 V PINNING - TO-92 1 = source 2 = gate 3 = drain PIN CONFIGURATION handbook, 2 columns handbook, halfpage 1 d 2 3 g MSB033 MBB076 - 1 Note: Various pinnings are available. Fig.1 Simplified outline and symbol. April 1995 2 s Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 200 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) ID max. 250 mA Drain current (peak) IDM max. 500 mA Total power dissipation up to Tcase = 25 °C Ptot max. 0.6 W Storage temperature Tstg Junction temperature Tj max. 150 °C Rth j-a = 125 K/W −55 to +150 °C THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead min. 10 mm × 10 mm. April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage ID = 10 µA; VGS = 0 V(BR)DSS min. 200 V IDSS max. 30 nA IGSS max. 10 nA VGS(th) min. max. 1.0 V 3.0 V ID = 250 mA; VGS = 10 V RDSon typ. max. 4.5 Ω 6.4 Ω ID = 100 mA; VGS = 10 V RDSon typ. max. 4.2 Ω 6.0 Ω yfs min. typ. 200 mS 350 mS Ciss typ. 45 pF Coss typ. 15 pF Crss typ. 3.5 pF ton toff typ. typ. 5 ns 15 ns Drain-source leakage current VDS = 130 V; VGS = 0 Gate-source leakage current VGS = 15 V; VDS = 0 Gate threshold voltage ID = 1 mA; VDS = VGS Drain-source ON-resistance Transfer admittance ID = 250 mA; VDS = 25 V Input capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Output capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Feedback capacitance at f = 1 MHz VDS = 25 V; VGS = 0 Switching times (see Figs 2 and 3) ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage BS107A handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 Fig.2 Switching times test circuit. April 1995 Fig.3 Input and output waveforms. 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 April 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS107A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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