DISCRETE SEMICONDUCTORS DATA SHEET PMBF170 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION PMBF170 QUICK REFERENCE DATA N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. Drain-source voltage VDS max. 60 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) ID max. 250 mA Total power dissipation up to Tamb = 25 °C Ptot max. 300 mW Drain-source on-resistance ID = 200 mA; VGS = 10 V RDS(on) typ. max. 2.5 Ω 5.0 Ω FEATURES Transfer admittance ID = 200 mA; VDS = 10 V | Yfs| min. typ. 100 mS 200 mS • Direct interface to C-MOS, TTL, etc. • High-speed switching PINNING - SOT23 • No secondary breakdown 1 = gate 2 = source 3 = drain Marking code: PMBF170 = PKX PIN CONFIGURATION 3 handbook, halfpage handbook, 2 columns d g 1 Top view 2 MBB076 - 1 MSB003 Fig.1 Simplified outline and symbol. April 1995 2 s Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PMBF170 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 60 V Gate-source voltage (open drain) ± VGSO max. 20 V Drain current (DC) ID max. 250 mA Drain current (peak) IDM max. 500 mA Total power dissipation up to Tamb = 25 °C (note 1) Ptot max. max. 300 mW (note 1) 250 mW (note 2) Storage temperature range Tstg Junction temperature Tj max. 150 °C From junction to ambient (note 1) Rth j-a = 430 K/W From junction to ambient (note 2) Rth j-a = 500 K/W −65 to +150 °C THERMAL RESISTANCE Notes 1. Mounted on ceramic substrate measuring 10 mm × 8 mm × 0.7 mm. 2. Mounted on printed-circuit board. April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PMBF170 CHARACTERISTICS Tj = 25 °C unless otherwise specified Drain-source breakdown voltage V(BR) DSS min. typ. 60 V 90 V VDS = 25 V; VGS = 0 IDSS max. 500 nA VDS = 48 V; VGS = 0 IDSS max. 1 µA IGSS max. 10 nA VGS(th) min. max. 0.8 V 3.0 V RDS(on) typ. max. 2.5 Ω 5.0 Ω Yfs min. typ. 100 mS 200 mS Ciss typ. max. 25 pF 40 pF Coss typ. max. 22 pF 30 pF Crss typ. max. 6 pF 10 pF ton toff max. max. 10 ns 15 ns ID = 10 µA; VGS = 0 Drain-source leakage current Gate-source leakage current VGS = 15 V; VDS = 0 Gate-source cut-off voltage ID = 1 mA; VDS = VGS Drain-source on-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 10 V Input capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz Output capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz Feedback capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz Switching times VGS = 0 to 10 V; ID = 200 mA ; VDD = 50 V April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage PMBF170 handbook, halfpage 90 % INPUT 10 % 90 % 10 V 0V ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 Fig.2 Switching times test circuit. April 1995 Fig.3 Input and output waveforms. 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PMBF170 PACKAGE OUTLINES Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PMBF170 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. 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