DISCRETE SEMICONDUCTORS DATA SHEET BS108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL • High-speed switching • No secondary breakdown. DESCRIPTION PARAMETER drain-source voltage 200 V ID DC drain current 250 mA RDS(on) drain-source on-resistance 8 Ω VGS(th) gate-source threshold voltage 1.8 V PINNING DESCRIPTION 1 source 2 gate 3 drain handbook, 2 columns handbook, halfpage 1 d 2 3 g MSB033 MBB076 - 1 s Fig.1 Simplified outline (TO-92) and symbol. April 1995 UNIT VDS N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PIN MAX. 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS108 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDS drain-source voltage ±VGSO gate-source voltage ID DC drain current IDM peak drain current Ptot total power dissipation Tstg Tj CONDITIONS MIN. open drain MAX. UNIT − 200 V − 20 V − 250 mA − 1 A − 1 W storage temperature range −65 150 °C junction temperature − 150 °C up to Tamb = 25 °C (note 1) THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient (note 1) 125 K/W Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 × 10 mm CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)DSS drain-source breakdown voltage CONDITIONS ID = 10 µA; VGS = 0 MIN. TYP. MAX. UNIT 200 − − V IDSS drain-source leakage current VDS = 160 V; VGS = 0 − − 1 µA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 100 nA VGS(th) gate-source threshold voltage ID = 1 mA; VGS = VDS 0.4 − 1.8 V RDS(on) drain-source on-resistance ID = 100 mA; VGS = 2.8 V − 5 8 Ω Yfs transfer admittance ID = 300 mA; VDS = 25 V 200 400 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 50 80 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 20 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 5 10 pF Switching times (see Figs 2 and 2) ton turn-on time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V − 5 10 ns toff turn-off time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V − 20 30 ns April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage BS108 handbook, halfpage 90 % INPUT 10 % 10 V 0V 90 % ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 VDD = 50 V Fig.2 Switching times test circuit. April 1995 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS108 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 April 1995 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BS108 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor NOTES April 1995 7 BS108 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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