PHILIPS BGA2717

BGA2717
MMIC wideband amplifier
Rev. 02 — 24 September 2004
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
■
■
■
■
■
■
■
■
Internally matched to 50 Ω
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 24 dB gain (±1 dB up to 2.8 GHz)
−2.5 dBm output power at 1 dB compression point
Good linearity for low current (IP3out = 10 dBm)
Low second harmonic; −38 dBc at PD = −40 dBm
Low noise figure; 2.3 dB at 1 GHz
Unconditionally stable (K ≥ 2).
1.3 Applications
■
■
■
■
LNB IF amplifiers
Cable systems
ISM
General purpose.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
VS
IS
s21
2
Conditions
Min
Typ
Max
Unit
DC supply voltage
-
5
6
V
supply current
-
8
-
mA
insertion power gain
f = 1 GHz
-
24
-
dB
NF
noise figure
f = 1 GHz
-
2.3
-
dB
PL(sat)
saturated load power
f = 1 GHz
-
1
-
dBm
BGA2717
Philips Semiconductors
MMIC wideband amplifier
2. Pinning information
Table 2:
Pinning
Pin
Description
1
VS
2, 5
GND2
3
RF_OUT
4
GND1
6
RF_IN
Simplified outline
6
5
Symbol
1
4
6
3
4
2, 5
sym052
1
2
3
SOT363
3. Ordering information
Table 3:
Ordering information
Type number
BGA2717
Package
Name
Description
Version
-
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 4:
Marking
Type number
Marking code
BGA2717
1B-
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VS
DC supply voltage
RF input AC
coupled
-
6
V
IS
supply current
-
15
mA
Ptot
total power dissipation
-
200
mW
Tsp ≤ 90 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
PD
maximum drive power
-
−10
dBm
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Product data sheet
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Rev. 02 — 24 September 2004
2 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction
to solder point
Ptot = 200 mW;
Tsp ≤ 90 °C
300
K/W
7. Characteristics
Table 7:
Characteristics
VS = 5 V; IS = 8 mA; Tj = 25 °C; measured on demo board; unless otherwise specified.
Symbol
Parameter
IS
s21
2
s112
s22
2
s122
Conditions
Min
Typ
Max
Unit
supply current
6
8
10
mA
insertion power f = 100 MHz
gain
f = 1 GHz
18
18.6
20
dB
23
23.9
25
dB
f = 1.8 GHz
24
25
27
dB
f = 2.2 GHz
24
25.1
27
dB
f = 2.6 GHz
22
24
26
dB
f = 3 GHz
20
22.1
24
dB
input return
losses
f = 1 GHz
15
19
-
dB
f = 2.2 GHz
8
9.4
-
dB
output return
losses
f = 1 GHz
8
10
-
dB
f = 2.2 GHz
5
6.8
-
dB
isolation
f = 1.6 GHz
54
55
-
dB
f = 2.2 GHz
38
39
-
dB
f = 1 GHz
-
2.3
2.5
dB
NF
noise figure
f = 2.2 GHz
-
2.9
3.1
dB
B
bandwidth
at s212 −3 dB below flat
gain at 1 GHz
3
3.2
-
GHz
K
stability factor
f = 1 GHz
-
13
-
f = 2.2 GHz
-
1.7
-
PL(sat)
saturated load
power
f = 1 GHz
0
1.4
-
dBm
f = 2.2 GHz
−1
+0.1
-
dBm
load power
at 1 dB gain compression;
f = 1 GHz
−4
−2.6
-
dBm
at 1 dB gain compression;
f = 2.2 GHz
−5
−3.1
-
dBm
PL(1dB)
IM2
second order
at PD = −40 dBm;
intermodulation f0 = 1 GHz
product
36
38
-
dBc
IP3in
input, third
order intercept
point
f = 1 GHz
−15
−13.9
-
dBm
f = 2.2 GHz
−20
−18.8
-
dBm
output, third
order intercept
point
f = 1 GHz
9
10
-
dBm
f = 2.2 GHz
4
6.3
-
dBm
IP3out
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
3 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2717 MMIC. The device is
internally matched to 50 Ω, and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
VS
C1
1
VS
C2
RF input
6 RF_IN
RF_OUT 3
GND1
4
C3
RF output
GND2
2, 5
mgu435
Fig 1. Typical application circuit.
Figure 2 shows the PCB layout, used for the standard demonstration board.
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
4 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
30 mm
PHILIPS
PH
30 mm
IN
OUT
V+
PHILIPS
PH
DUT
C3
C2
IN
OUT
C1
V+
001aab255
Material = FR4; thickness = 0.6 mm, εr = 4.6.
Fig 2. PCB layout and demonstration board showing components.
8.1 Grounding and output impedance
If the grounding is not optimal, the gain becomes less flat and the 50 Ω output matching
becomes worse. If a better output matching to 50 Ω is required, a 12 Ω resistor (R1) can
be placed in series with C3 (see Figure 3). This will significantly improve the output
impedance, at the cost of 1 dB gain and 1 dB output power.
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
5 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
VS
C1
VS
C2
RF input
RF_OUT
RF_IN
GND1
C3
R1
RF output
GND2
001aab346
Fig 3. Application circuit for better output impedance into 50 Ω.
8.2 Application examples
The MMIC is very suitable as IF amplifier in e.g. LNBs. The excellent wideband
characteristics make it an ideal building block (see Figure 4). As second amplifier after an
LNA, the MMIC offers an easy matching, low noise solution (see Figure 5).
mixer
to IF circuit
or demodulator
from
RF circuit
wideband
amplifier
oscillator
mgu438
Fig 4. Application as IF amplifier.
mixer
to IF circuit
or demodulator
antenna
LNA
wideband
amplifier
oscillator
mgu439
Fig 5. Application as RF amplifier.
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
6 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
4 GHz
0.2
180°
0
0.2
0.5
100 MHz
2
5
0°
0
−5
−0.2
−135°
10
−2
−0.5
−45°
−1
1.0
−90°
001aab265
IS = 8 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω.
Fig 6. Input reflection coefficient (s11); typical values.
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
100 MHz
+0.2
0.4
+5
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
4 GHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aab266
IS = 8 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω.
Fig 7. Output reflection coefficient (s22); typical values.
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
7 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
001aab267
0
001aab268
30
|s21| 2
(dB)
|s12 | 2
(dB)
(2)
(1)
−20
20
(3)
−40
10
−60
0
0
1000
2000
3000
0
4000
1000
2000
3000
4000
f (MHz)
f (MHz)
IS = 8 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω.
PD = −35 dBm; Zo = 50 Ω.
(1) IS = 8.9 mA; VS = 5.5 V.
(2) IS = 8 mA; VS = 5 V.
(3) IS = 7.2 mA; VS = 4.5 V.
Fig 8. Isolation (s122) as a function of frequency;
typical values.
001aab269
10
PL
(dBm)
Fig 9. Insertion gain (s212) as a function of
frequency; typical values.
001aab270
10
PL
(dBm)
(1)
(1)
(2)
0
(3)
−10
−10
−20
−20
−30
−50
−40
−30
−20
−10
PD (dBm)
f = 1 GHz; Zo = 50 Ω.
−30
−50
−40
−30
−20
−10
PD (dBm)
f = 2.2 GHz; Zo = 50 Ω.
(1) VS = 5.5 V.
(1) VS = 5.5 V.
(2) VS = 5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
(3) VS = 4.5 V.
Fig 10. Load power as a function of drive power at
1 GHz; typical values.
Fig 11. Load power as a function of drive power at
2.2 GHz; typical values.
9397 750 13293
Product data sheet
(2)
0
(3)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
8 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
001aab271
4
001aab272
25
K
NF
(dB)
20
3
(3)
15
(2)
(1)
2
10
1
5
0
0
0
500
1000
1500
2000
2500
f (MHz)
Zo = 50 Ω.
0
1000
2000
3000
4000
f (MHz)
IS = 8 mA; VS = 5 V; Zo = 50 Ω.
(1) IS = 8.9 mA; VS = 5.5 V.
(2) IS = 8 mA; VS = 5 V.
(3) IS = 7.2 mA; VS = 4.5 V.
Fig 12. Noise figure as a function of frequency; typical
values.
Fig 13. Stability factor as a function of frequency;
typical values.
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
9 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
Table 8:
Scattering parameters
VS = 5 V; IS = 8 mA; PD = −35 dBm; Zo = 50 Ω; Tamb = 25 °C.
f (MHz)
s11
s21
s12
s22
Magnitude Angle
(ratio)
(deg)
Magnitude Angle
(ratio)
(deg)
Magnitude Angle
(ratio)
(deg)
Magnitude Angle
(ratio)
(deg)
100
0.074378
13.78537
8.465495
22.90763
0.003859
−66.39435
0.450496
79.88713
12.2
200
0.076338
13.70153
9.420359
7.358555
0.003112
−122.2687
0.354179
40.70919
14.9
400
0.123748
−1.402521
11.56481
−14.92222
0.002011
−40.5142
0.312568
−0.3804
19.1
600
0.145511
−31.32646
13.31271
−37.77988
0.001659
−156.393
0.3038
−25.36808
20.2
800
0.134956
−67.10955
14.56872
−61.08808
0.00169
−164.4454
0.30873
−46.7704
18.1
1000
0.114063
−111.2495
15.61733
−84.67015
0.002146
−174.8593
0.319208
−68.71787
13.2
1200
0.101959
−168.8557
16.45625
−107.9167
0.002901
139.8136
0.335623
−91.58398
9.2
1400
0.125656
129.9717
17.05668
−131.63
0.004053
123.527
0.353582
−116.5485
6.2
1600
0.16736
85.791
17.49643
−155.2301
0.005545
107.0763
0.366893
−140.7537
4.3
1800
0.234721
51.43065
17.90167
−179.6656
0.007498
105.9423
0.404064
−167.9683
2.9
2000
0.285944
16.46701
17.86635
155.5993
0.009779
90.10168
0.42512
163.3173
2.2
2200
0.339673
−11.74152
17.96498
130.5601
0.011736
75.19814
0.459194
135.039
1.7
2400
0.393746
−47.58817
17.32414
103.3297
0.013927
53.10814
0.459988
103.1106
1.5
2600
0.384353
−81.55786
15.87927
77.84766
0.015937
21.70136
0.428158
75.83004
1.5
2800
0.376183
−112.353
14.44081
52.77053
0.016795
4.656224
0.393701
50.16202
1.7
3000
0.358586
−142.5801
12.67831
30.51455
0.01786
−19.19006
0.3497
26.66791
1.9
3200
0.345562
−171.7261
11.27597
10.04765
0.019217
−32.22469
0.30875
6.504047
2.0
3400
0.33312
160.2254
10.43483
−9.842264
0.020551
−49.16136
0.279672
−12.63121
2.1
3600
0.331268
133.8644
9.743293
−30.36495
0.020908
−59.65434
0.248479
−33.64811
2.2
3800
0.337502
108.48
9.072149
−50.7401
0.022136
−78.78085
0.21362
−56.42401
2.3
4000
0.344645
84.75183
8.513716
−71.86536
0.022792
−94.87525
0.168643
−80.24833
2.4
9397 750 13293
Product data sheet
K-factor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
10 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
9. Package outline
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
EIAJ
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Fig 14. Package outline; SOT363 (SC-88).
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
11 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
10. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BGA2717_2
20040924
Product data sheet
-
9397 750 13293
BGA2717_N_1
Modifications:
BGA2717_N_1
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors
20040202
Preliminary data sheet
-
9397 750 13293
Product data sheet
9397 750 12828
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
12 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 13293
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 24 September 2004
13 of 14
BGA2717
Philips Semiconductors
MMIC wideband amplifier
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Grounding and output impedance . . . . . . . . . . 5
Application examples . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 24 September 2004
Document number: 9397 750 13293
Published in The Netherlands