PHILIPS PESD5V0S2BT

PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
in SOT23 package
Rev. 02 — 27 May 2004
Product data sheet
1. Product profile
1.1 General description
Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic
package designed to protect 2 data lines from the damage caused by Electro Static
Discharge (ESD) and other transients.
1.2 Features
■
■
■
■
■
■
■
■
Bi-directional ESD protection of 2 lines
Low diode capacitance
Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs
Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A
Ultra low leakage current: IRM = 5 nA at VRWM = 5 V
ESD protection > 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs.
1.3 Applications
■
■
■
■
■
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communication systems
Audio and video equipment.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Cd
diode capacitance
number of protected lines
Conditions
f = 1 MHz;
VR = 0 V
Min
Typ
Max
Unit
-
5
-
V
-
35
-
pF
-
2
-
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
2. Pinning information
Table 2:
Discrete Pinning
Pin
Description
Simplified outline
1
cathode 1
2
cathode 2
3
double cathode
Symbol
3
1
3
1
2
2
SOT23
sym031
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
PESD5V0S2BT -
Description
Version
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4:
Marking
Type number
Marking code [1]
PESD5V0S2BT
*G5
[1]
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Ppp
peak pulse power
8/20 µs pulse
[1] [2]
-
130
W
Ipp
peak pulse current
8/20 µs pulse
[1] [2]
-
12
A
Tj
junction temperature
-
150
°C
Tamb
operating ambient
temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Per diode
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[2]
Measured between pins 1 to 3 or pin 2 to 3.
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
2 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
Table 6:
Symbol
ESD
ESD maximum ratings
Parameter
Conditions
electro static
discharge capability
IEC 61000-4-2 (contact
discharge)
[1] [2]
HBM MIL-Std 883
Value
Unit
30
kV
10
kV
[1]
Device stressed with ten non-repetitive Electro Static Discharge (ESD) pulses; see Figure 2.
[2]
Measured between pins 1 to 3 or pin 2 to 3.
Table 7:
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD); see Figure 2
> 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3
> 4 kV
001aaa631
Ipp
001aaa630
120
100 %
90 %
100 % Ipp; 8 µs
Ipp
(%)
80
e−t
50 % Ipp; 20 µs
40
10 %
tr = 0.7 to 1 ns
0
0
10
20
30
30 ns
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5.
60 ns
Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2.
9397 750 13344
Product data sheet
t
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
3 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
6. Characteristics
Table 8:
Electrical characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
5
V
-
5
100
nA
Per diode
VRWM
reverse stand-off
voltage
IRM
reverse leakage
current
VRWM = 5 V
V(CL)R
clamping voltage
Ipp = 1 A
[1] [2]
-
-
10
V
Ipp = 12 A
[1] [2]
-
-
14
V
VBR
breakdown voltage
IR = 1 mA
5.5
-
9.5
V
rdiff
differential
resistance
IR = 1 mA
-
-
50
Ω
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
35
45
pF
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform, see Figure 3.
[2]
Measured from pin 1 to 3 or pin 2 to 3.
001aaa632
103
001aaa633
1.2
Ppp
Ppp(25 °C)
Ppp
(W)
0.8
102
0.4
10
1
10
102
103
104
0
0
50
t p (µs)
100
150
200
Tj (°C)
Tamb = 25 °C.
Tamb = 25 °C.
tp = 8/20 µs exponential decay waveform; see
Figure 1.
Fig 3. Peak pulse power dissipation as a function of
pulse time; typical values.
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values.
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
4 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
001aaa634
38
001aaa635
102
Cd
(pF)
IR
IR(85 °C)
34
10
30
1
26
10−1
22
0
1
2
3
4
5
75
100
125
VR (V)
Tamb = 25 °C; f = 1 MHz.
150
IR < 1 nA measured at Tamb = 25 °C.
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values.
9397 750 13344
Product data sheet
Tj (°C)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
5 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
D.U.T.: PESD5V0S2BT
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
coa006
Fig 7. ESD clamping test set-up and waveforms.
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
6 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
7. Application information
The PESD5V0S2BT is designed for the bi-directional protection of 2 lines from the
damage caused by Electro Static Discharge (ESD) and surge pulses. The
PESD5V0S2BT may be used on lines where the signal polarities are above and below
ground. The PESD5V0S2BT provides a surge capability of 130 Watts peak Ppp per line for
an 8/20 µs waveform.
line 1 to be protected
line 2 to be protected
PESD5V0S2BT
GND
001aaa636
Fig 8. Typical application for bi-directional protection of two lines.
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD5V0S2BT as close to the input terminal or connector as possible.
2. The path length between the PESD5V0S2BT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and group loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
7 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
8. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
Fig 9. Package outline.
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
8 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
9. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
PESD5V0S2BT_2
20040527
Product data
-
9397 750 13344
PESD5V0S2BT_1
PESD5V0S2BT_1
20040517
Product data
-
9397 750 12901
-
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
9 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
10. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 13344
Product data sheet
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 02 — 27 May 2004
10 of 11
PESD5V0S2BT
Philips Semiconductors
Low capacitance bi-directional double ESD protection diode
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 27 May 2004
Document order number: 9397 750 13344
Published in The Netherlands