BGD902 860 MHz, 18.5 dB gain power doubler amplifier Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. 1.2 Features ■ ■ ■ ■ ■ ■ Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 1.3 Applications ■ CATV systems operating in the 40 MHz to 900 MHz frequency range. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 50 MHz 18.2 18.5 18.8 dB 19 19.5 20 dB 405 420 435 mA f = 900 MHz total current consumption (DC) Itot [1] [1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 2. Pinning information Table 2: Pinning Pin Description 1 input 2, 3 common 5 +VB 7, 8 common 9 output Simplified outline 1 2 3 5 7 8 Symbol 5 9 1 9 2 3 7 8 Side view msa319 sym095 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 3. Ordering information Table 3: Ordering information Type number BGD902 Package Name Description Version - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VB Vi Conditions Min Max Unit supply voltage - 30 V RF input voltage - 70 dBmV Tstg storage temperature −40 +100 °C Tmb mounting base temperature −20 +100 °C 5. Characteristics Table 5: Characteristics Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 50 MHz 18.2 18.5 18.8 dB f = 900 MHz 19 19.5 20 dB SL slope cable equivalent f = 40 MHz to 900 MHz 0.4 0.9 1.4 dB FL flatness of frequency response f = 40 MHz to 900 MHz - ±0.15 ±0.3 dB s11 input return losses f = 40 MHz to 80 MHz 21 24 - dB f = 80 MHz to 160 MHz 22 26 - dB f = 160 MHz to 320 MHz 22 28 - dB f = 320 MHz to 640 MHz 19 22 - dB f = 640 MHz to 900 MHz 18 21 - dB f = 40 MHz to 80 MHz 25 32 - dB f = 80 MHz to 160 MHz 25 33 - dB f = 160 MHz to 320 MHz 21 29 - dB f = 320 MHz to 750 MHz 20 25 - dB f = 750 MHz to 900 MHz 19 22 - dB f = 50 MHz −45 - +45 deg s22 s21 output return losses phase response 9397 750 14435 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 2 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier Table 5: Characteristics …continued Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol Parameter Conditions Min Typ Max Unit CTB composite triple beat 49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz - −68.5 −67 dB 77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz - −70 −68 dB 110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz - −63.5 −62 dB 129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz - −60 −58 dB 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz [1] - −64 −62 dB 129 chs; fm = 650 MHz; Vo = 49.5 dBmV at 860 MHz [2] - −58.5 −56.5 dB cross modulation 49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz - −66.5 −64 dB 77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz - −69.5 −67 dB 110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz - −66 −63.5 dB 129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz - −64.5 −62 dB 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz [1] - −63 −60 dB 129 chs; fm = 860 MHz; Vo = 49.5 dBmV at 860 MHz [2] - −61 −58 dB 49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz - −65 −62 dB 77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz - −72 −67 dB 110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz - −65 −60 dB 129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz - −61 −58 dB 110 chs; fm = 250 MHz; Vo = 49 dBmV at 550 MHz [1] - −67 −63 dB 129 chs; fm = 250 MHz; Vo = 49.5 dBmV at 860 MHz [2] - −62 −58 dB [3] - −80 −74 dB [4] - −83 −77 dB [5] - −84 −78 dB [6] 64.5 66 - dBmV [7] 65.5 67 - dBmV [8] 67.5 69 - dBmV CTB compression = 1 dB; 129 chs flat; f = 859.25 MHz 48.5 49.5 - dBmV CSO compression = 1 dB; 129 chs flat; f = 860.5 MHz 50 53 - dBmV Xmod CSO IMD2 composite second order distortion second order distortion output voltage Vo F noise figure IMD = −60 dB f = 50 MHz - 4.5 5 dB f = 550 MHz - 5 5.5 dB f = 750 MHz - 5.5 6.5 dB - 6.5 8 dB 405 420 435 mA f = 900 MHz [9] total current consumption (DC) Itot [1] Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). [2] Tilt = 12.5 dB (50 MHz to 860 MHz). 9397 750 14435 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 3 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier [3] fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. [4] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. [5] fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. [6] Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. [7] Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. [8] Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. [9] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. mda980 −50 52 Vo (dBmV) CTB (dB) (2) (3) (4) (1) −60 (2) (3) (4) 48 mda981 −50 Xmod (dB) Vo (dBmV) (1) (2) (3) (4) −60 (1) 52 48 (1) −70 44 −70 44 −80 40 −80 40 36 1000 800 f (MHz) −90 −90 0 200 400 600 ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). 0 200 (1) Vo. (1) Vo. (2) Typ. +3 σ. (3) Typ. (3) Typ. (4) Typ. −3 σ. (4) Typ. −3 σ. 36 1000 800 f (MHz) Fig 2. Cross modulation as a function of frequency under tilted conditions 9397 750 14435 Product data sheet 600 ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (2) Typ. +3 σ. Fig 1. Composite triple beat as a function of frequency under tilted conditions 400 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 4 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier mda982 CSO (dB) −50 Vo (dBmV) CTB (dB) 48 −60 44 −70 44 40 −80 40 36 800 1000 f (MHz) −90 (1) (2) −60 mda942 52 −50 (1) Vo (dBmV) (2) (3) (4) (1) 48 (3) (2) (4) −70 52 (3) (4) −80 −90 0 200 400 600 ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. 0 200 600 36 800 1000 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (2) Typ. +3 σ. (3) Typ. (3) Typ. (4) Typ. −3 σ. (4) Typ. −3 σ. Fig 3. Composite second order distortion as a function of frequency under tilted conditions Fig 4. Composite triple beat as a function of frequency under tilted conditions 9397 750 14435 Product data sheet 400 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 5 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier mda943 −50 Xmod (dB) 52 Vo (dBmV) (1) (2) −60 48 (3) (4) mda944 −50 CSO (dB) 52 Vo (dBmV) (1) −60 48 (2) −70 44 (3) −70 44 (4) 40 −80 36 800 1000 f (MHz) −90 −80 −90 0 400 200 600 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). 40 0 200 (1) Vo. (1) Vo. (2) Typ. +3 σ. (3) Typ. (3) Typ. (4) Typ. −3 σ. (4) Typ. −3 σ. mda945 −20 Fig 6. Composite second order distortion as a function of frequency under tilted conditions CSO (dB) −30 −40 −40 −50 −50 −60 (1) (2) (3) mda946 −20 CTB (dB) −30 −60 36 1000 800 f (MHz) 600 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (2) Typ. +3 σ. Fig 5. Cross modulation as a function of frequency under tilted conditions 400 (1) (2) (3) −70 40 45 50 Vo (dBmV) 55 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. −70 40 50 Vo (dBmV) 55 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (1) Typ. +3 σ. (2) Typ. (2) Typ. (3) Typ. −3 σ. (3) Typ. −3 σ. Fig 7. Composite triple beat as a function of output voltage Fig 8. Composite second order distortion as a function of output voltage 9397 750 14435 Product data sheet 45 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 6 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 x M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F L min. p 4.15 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 3.85 0.38 Q max. q JEDEC q2 S U1 U2 W w x 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC REFERENCES IEC q1 JEITA EUROPEAN PROJECTION y Z max. 0.1 3.8 ISSUE DATE 99-02-06 04-02-04 SOT115J Fig 9. Package outline SOT115J 9397 750 14435 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 7 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 7. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BGD902_7 20050308 Product data sheet - 9397 750 14435 BGD902_902MI_6 Modifications: • The format of this data sheet has been redesigned to comply with the new representation and information standard of Philips Semiconductors. • Module BGD902MI withdrawn BGD902_902MI_6 20011102 Product specification - 9397 750 08853 BGD902_902MI_5 BGD902_902MI_5 19990329 Product specification - 9397 750 05481 BGD902_N_3 and BGD902MI_N_1 BGD902_N_3 19980709 Preliminary specification - 9397 750 04076 BGD902_N_2 BGD902_N_2 19980609 Preliminary specification - 9397 750 03949 BGD902_1 BGD902_1 19980312 Preliminary specification - 9397 750 03454 - BGD902MI_N_1 19980831 Preliminary specification - - - 9397 750 14435 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 8 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 8. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions 10. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14435 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 07 — 8 March 2005 9 of 10 BGD902 Philips Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 1 2 2 2 7 8 9 9 9 9 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 8 March 2005 Document number: 9397 750 14435 Published in The Netherlands