DISCRETE SEMICONDUCTORS DATA SHEET BUT18F; BUT18AF Silicon diffused power transistors Product specification Supersedes data of 1997 Aug 13 1999 Jun 11 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT18F; BUT18AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN 1 base 2 collector 3 emitter mb APPLICATIONS DESCRIPTION mounting base; electrically isolated from all pins • Converters • Inverters • Switching regulators andbook, halfpage • Motor control systems. 2 1 3 MBB008 1 2 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MAX. UNIT VBE = 0 BUT18F 850 V BUT18AF 1000 V BUT18F 400 V BUT18AF 450 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage ICsat collector saturation current IC collector current (DC) ICM collector current (peak value) see Fig.4 12 A Ptot total power dissipation Th ≤ 25 °C; see Fig.2 33 W tf fall time resistive load; see Figs 10 and 11 0.8 µs see Fig.7 see Fig.4 1.5 V 4 A 6 A THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS UNIT thermal resistance from junction to external heatsink note 1 6.15 K/W note 2 3.65 K/W Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1999 Jun 11 VALUE 2 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage MIN. MAX. UNIT VBE = 0 BUT18F − 850 V BUT18AF − 1000 V BUT18F − 400 V BUT18AF − 450 V − 4 A collector-emitter voltage open base ICsat collector saturation current IC collector current (DC) see Fig.4 − 6 A ICM collector current (peak value) see Fig.4 − 12 A IB base current (DC) − 3 A IBM base current (peak value) Ptot total power dissipation − 6 A Th ≤ 25 °C; see Fig.2; note 1 − 20 W Th ≤ 25 °C; see Fig.2; note 2 − 33 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Notes 1. Without heatsink compound. 2. With heatsink compound. ISOLATION CHARACTERISTICS SYMBOL PARAMETER TYP. MAX. UNIT VisolM isolation voltage from all terminals to external heatsink (peak value) − 1500 V Cisol isolation capacitance from collector to external heatsink 12 − pF CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER collector-emitter sustaining voltage BUT18F CONDITIONS IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 3 and 6 BUT18AF MIN. TYP. MAX. UNIT 400 − − V 450 − − V − 1.5 V VCEsat collector-emitter saturation voltage IC = 4 A; IB = 800 mA; see Fig.7 − VBEsat base-emitter saturation voltage IC = 4 A; IB = 800 mA; see Fig.8 − − 1.3 V ICES collector-emitter cut-off current VCE = VCESMmax; VBE = 0; note 1 − − 1 mA VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − 2 mA VEB = 9 V; IC = 0 − − 10 mA IEBO 1999 Jun 11 emitter-base cut-off current 3 Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL hFE BUT18F; BUT18AF PARAMETER CONDITIONS DC current gain MIN. TYP. MAX. VCE = 5 V; IC = 10 mA; see Fig.9 10 18 35 VCE = 5 V; IC = 1 A; see Fig.9 10 20 35 UNIT Switching times resistive load (see Figs 10 and 11) ton turn-on time ICon = 4 A; IBon = −IBoff = 800 mA − − 1 µs ts storage time ICon = 4 A; IBon = −IBoff = 800 mA − − 4 µs tf fall time ICon = 4 A; IBon = −IBoff = 800 mA − − 0.8 µs Switching times inductive load (see Figs 10 and 13) ts storage time ICon = 4 A; IBon = 800 mA − 1.6 2.5 µs tf fall time ICon = 4 A; IBon = 800 mA − 150 400 ns Note 1. Measured with a half-sinewave voltage (curve tracer). MGK674 120 handbook, halfpage handbook, halfpage Ptot max + 50 V (%) 100 to 200 Ω L 80 horizontal oscilloscope vertical 40 6V 30 to 60 Hz 0 0 50 100 Th (oC) 1Ω MGE252 150 Fig.3 Fig.2 Power derating curve. 1999 Jun 11 300 Ω 4 Test circuit for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUT18F; BUT18AF MGB922 102 IC (A) ICM max 10 IC max II 1 I 10−1 DC 10−2 BUT18F BUT18AF 10−3 10−4 1 10 102 Mounted without heatsink compound and 30 ±5 N force on centre of package. Tmb < 25 °C I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. Fig.4 Forward bias SOAR. 1999 Jun 11 5 103 VCE (V) 104 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF MGB866 10 handbook, full pagewidth Zth j−mb (K/W) δ=1 1 0.75 0.50 0.33 0.20 0.10 10−1 0.05 0.02 0.01 10−2 0 10−3 10−4 10−3 10−2 10−1 1 10 tp (s) 102 Fig.5 Transient thermal impedance. MGB884 2 handbook, halfpage (1) (2) (3) VCEsat (V) handbook,IC halfpage MGE239 (mA) 250 1 200 100 0 0 10−2 VCE (V) min VCEOsust 10−1 1 IB (A) 10 Tj = 25 °C. (1) IC = 1 A. (2) IC = 2 A. (3) IC = 4 A. Fig.6 Oscilloscope display for collector-emitter sustaining voltage. 1999 Jun 11 Fig.7 6 Collector-emitter saturation voltage as a function of base current. Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF MGB880 1.5 handbook, halfpage MBC097 102 handbook, halfpage VBEsat (V) hFE (1) (2) 1 VCE = 5 V (3) 1V 10 0.5 10−2 10−1 1 IB (A) 10 1 10−2 Tj = 25 °C. (1) IC = 4 A. (2) IC = 2 A. (3) IC = 1 A. 10−1 1 10 2 IC (A) 10 VCE = 5 V; Tj = 25 °C. Fig.8 Base-emitter saturation voltage as a function of base current. Fig.9 DC current gain; typical values. handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB 10% VCC handbook, halfpage t IB off RL VIM RB 0 D.U.T. tp T IC on 90% IC MGE244 10% ton VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. t tr ≤ 20 ns. Fig.11 Switching times waveforms with resistive load. Fig.10 Test circuit resistive load. 1999 Jun 11 tf ts 7 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF handbook, halfpage tr IB on 90% IB 10% t VCC handbook, halfpage −IB off LC +IB VCL LB IC on 90% D.U.T. −VBE IC MGE246 10% ts toff t tf MGE238 VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH. Fig.13 Switching time waveforms with inductive load. Fig.12 Test circuit inductive load. 1999 Jun 11 8 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF PACKAGE OUTLINE Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs SOT186 E E1 A P A1 m q D1 D L1 Q b1 L L2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E E1 e e1 L L1(1) L2 m P Q q w mm 4.4 4.0 2.9 2.5 0.9 0.7 1.5 1.3 0.55 0.38 17.0 16.4 7.9 7.5 10.2 9.6 5.7 5.3 2.54 5.08 14.3 13.5 4.8 4.0 10 0.9 0.5 3.2 3.0 1.4 1.2 4.4 4.0 0.4 Note 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. OUTLINE VERSION SOT186 1999 Jun 11 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 9 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jun 11 10 Philips Semiconductors Product specification Silicon diffused power transistors BUT18F; BUT18AF NOTES 1999 Jun 11 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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