Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 (TO92) envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage VBE = 0 V 0.27 12 56 700 700 350 1.0 2.0 2.0 1.0 19 76 V V V A A W V Fall time (Inductive) PINNING - SOT54 (TO92) PIN Tlead ≤ 25 ˚C IC = 1.0 A;IB = 0.2 A IC = 1.0 A; VCE = 5 V IC = 1.0 A; IB1= 0.2 A PIN CONFIGURATION SYMBOL DESCRIPTION 1 Base 2 Collector 3 Emitter ns c b e 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 700 350 700 1.0 2.0 0.5 1.0 2.0 150 150 V V V A A A A W ˚C ˚C TYP. MAX. UNIT - 60 K/W 150 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-lead Thermal resistance junction to lead Rth j-a Thermal resistance junction to ambient May 2001 CONDITIONS pcb mounted; lead length = 4 mm 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES,ICBO ICES Collector cut-off current ICEO IEBO VCEOsust Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VCEO = VCEOMmax (350V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 1 A; IB = 0.2 A IC = 1 A; IB = 0.2 A IC = 1mA; VCE = 5 V IC = 100mA; VCE = 5 V IC = 1.0 A; VCE = 5 V MIN. TYP. MAX. UNIT - 0.8 2.0 100 500 µA µA 350 0.05 - 100 100 - µA µA V 17 19 9 0.27 1.03 23 30 12 1.0 1.3 46 19 V V TYP. MAX. UNIT 1.0 1.95 0.22 1.28 2.61 0.30 µs µs µs 0.55 56 0.74 76 µs ns - 1.5 140 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 1.0 A; IBon = -IBoff = 0.2 A; RL = 75 ohms; VBB2 = 4V; Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH; -VBB = 5 V ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). May 2001 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B ! + 50v 100-200R 100 Zth / (K/W) 0.5 10 0.2 0.1 0.05 1 0.02 Horizontal Oscilloscope PD Vertical tp D= tp T 0.1 30-60 Hz D=0 1R 300R t T 6V 0.01 1u Fig.1. Test circuit for VCEOsust. 10u 100u 1m 10m 100m t/s 1 10 100 Fig.4. Transient thermal impedance. Zth j-lead = f(t); parameter D = tp/T HFE 50 IC / mA 25 C 125 C 30 20 -40 C 15 250 10 VCE = 1V 5 100 10 0 2 min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. 0.01 0.05 0.1 0.5 1 2 3 IC/A Fig.5. Typical DC current gain. hFE = f(IC) parameter VCE HFE 50 Normalised Power Derating PD% 120 125 C 110 25 C 30 100 90 20 80 15 -40 C 70 10 VCE = 5V 60 50 5 40 30 20 2 10 0 0 20 40 60 80 100 Tmb / C 120 140 0.01 0.1 0.5 1 2 3 IC/A Fig.3. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) May 2001 0.05 Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B VCEsat/V VBEsat/V 1.3 1.2 1.2 1 1.1 0.8 1 0.6 0.9 0.4 0.8 0.2 0.7 0 0.01 0.02 0.05 0.1 0.2 0.5 1 0.6 0.01 2 0.02 0.05 0.1 IC/A 0.2 0.5 1 2 IC/A Fig.7. Collector-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 Fig.8. Base-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 INDUCTIVE SWITCHING VCC ICon 90 % IC LC 10 % tf ts IBon LB t toff T.U.T. IBon IB -VBB t -IBoff Fig.9. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH Fig.10. Switching times waveforms with inductive load. tfi /ns 200 tfi /ns 250 IC/IB = 10 200 IC = 1.5A 150 150 IC = 1A 100 100 IC/IB = 5 50 50 IC = 0.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 0 0.2 11 Fig.11. Inductive switching. tfi = f(hFE) May 2001 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.12. Inductive switching. tfi = f(IC) 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B tsi /us 1 tsi /us 1 IC/IB = 3 0.8 0.8 IC = 1.5A IC/IB = 5 0.6 0.6 IC = 1A 0.4 0.4 IC/IB = 10 IC = 0.5A 0.2 0.2 0 0.2 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0.4 0.6 Fig.13. Inductive switching. tsi = f(hFE) 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.14. Inductive switching. tsi = f(IC) RESISTIVE SWITCHING VCC ICon 90 % 90 % IC RL 10 % ts VIM RB ton 0 IBon IB tp tf toff T.U.T. 10 % T tr 30ns -IBoff Fig.15. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.16. Switching times waveforms with resistive load. ts us 2.5 ton /us 2 IC/IB = 3 IC/IB = 10 2 1.5 IC/IB = 5 1.5 IC/IB = 5 1 1 0.5 IC/IB = 3 0.5 IC/IB = 10 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 0 0.2 2.2 Fig.17. Resistive switching. ton = f(IC) May 2001 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.18. Resistive switching. ts = f(IC) 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B tf /ns 5,000 2,000 IC/IB = 3 1,000 IC/IB = 5 500 200 IC/IB = 10 100 50 0.2 0.4 0.6 0.8 1 1.2 IC /A 1.4 1.6 1.8 2 2.2 Fig.19. Resistive switching. tf = f(IC) IC/A VCC 2.5 2.25 2 1.75 LC 1.5 1.25 VCL(RBSOAR) IBon 1 PROBE POINT LB 0.75 0.5 -VBB -9V -5V T.U.T. 0.25 -3V -1V 0 0 100 200 300 400 500 600 700 800 VCEclamp/V Fig.21. Reverse bias safe operating area Tj ≤ Tjmax for -VBE = 9V, 5V,3V & 1V Fig.20. Test Circuit for the RBSOA test. Vcl ≤ 700V; Vcc = 150V; LB = 1µH; Lc = 200µH May 2001 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B MECHANICAL DATA Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 e1 L L1(1) 1.27 14.5 12.7 2.5 e 2.54 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES OUTLINE VERSION IEC SOT54 JEDEC EIAJ TO-92 SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.22. TO92 ; plastic envelope; Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". May 2001 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2001 8 Rev 1.000