DISCRETE SEMICONDUCTORS DATA SHEET BFQ262; BFQ262A NPN video transistors Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT32 (TO-126) plastic package. • Low output capacitance page • Optimum temperature profile • Good thermal stability • Excellent reliability properties. PINNING PIN DESCRIPTION 1 emitter APPLICATIONS 2 collector • Buffer/driver in high-resolution colour graphics monitors. 3 base 1 Top view 2 3 MBC077 - 1 Fig.1 Simplified outline (SOT32; TO-126). QUICK REFERENCE DATA SYMBOL VCBO VCER PARAMETER collector-base voltage CONDITIONS MAX. UNIT BFQ262 − − 100 V BFQ262A − − 115 V BFQ262 − − 95 V BFQ262A − − 110 V − − 400 mA − − 5 W 50 60 − 20 35 − 1 1.4 − GHz 0.8 1.2 − GHz collector-emitter voltage RBE = 100 Ω collector current (DC) Ptot total power dissipation Ts ≤ 85 °C; note 1 hFE DC current gain IC = 100 mA; VCE = 10 V; Tamb = 25 °C BFQ262 BFQ262A transition frequency BFQ262 IC = 100 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C BFQ262A Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 02 TYP. open emitter IC fT MIN. 2 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BFQ262 − 100 V BFQ262A − 115 V BFQ262 − 65 V BFQ262A − 95 V BFQ262 − 95 V BFQ262A − 110 V open collector − 3 V − 400 mA Ts ≤ 85 °C; note 1; see Fig.3 − 5 W collector-emitter voltage collector-emitter voltage open base RBE = 100 Ω VEBO emitter-base voltage IC collector current (DC) Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 02 3 VALUE UNIT 18 K/W Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)CER PARAMETER collector-base breakdown voltage CONDITIONS MIN. TYP. MAX. UNIT IC = 0.1 mA; IE = 0 BFQ262 100 − − V BFQ262A 115 − − V collector-emitter breakdown voltage IC = 10 mA; IB = 0 BFQ262 65 − − V BFQ262A 95 − − V collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω BFQ262 95 − − V BFQ262A 110 − − V IE = 0.1 mA; IC = 0 3 − − V V(BR)EBO emitter-base breakdown voltage ICES collector-emitter cut-off current IB = 0; VCE = 50 V − − 100 µA ICBO collector-base cut-off current IE = 0; VCB = 50 V − − 20 µA hFE DC current gain IC = 100 mA; VCE = 10 V; Tamb = 25 °C; see Fig.4 50 60 − 20 35 − 1 1.4 − GHz BFQ262 BFQ262A fT transition frequency BFQ262 IC = 100 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 0.8 1.2 − GHz Ccb collector-base capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 − 2 − pF Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 3.5 − pF BFQ262A 1997 Oct 02 4 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A MEA283 500 IC (mA) MEA282 6 handbook, halfpage handbook, halfpage Ptot (W) 400 4 300 200 2 100 0 0 0 20 40 60 80 0 50 100 150 Fig.2 DC SOAR. Fig.3 Power derating curve. MEA281 70 200 Ts (oC) VCEO (V) MEA280 6 handbook, halfpage handbook, halfpage Ccb (pF) hFE 5 60 4 50 3 40 2 30 1 0 100 200 IC (mA) 300 1997 Oct 02 10 20 30 40 VCB (V) VCE = 10 V; Tamb = 25 °C. Fig.4 0 f = 1 MHz; Tamb = 25 °C. DC current gain as a function of collector current; typical values. Fig.5 5 Collector-base capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A MEA279 2.0 handbook, halfpage fT (GHz) 1.5 BFQ262 1.0 BFQ262A 0.5 0 50 100 IC (mA) 150 VCE = 10 V; f = 500 MHz; Tamb = 25 °C. Fig.6 1997 Oct 02 Transition frequency as a function of collector current; typical values. 6 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 bp 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1997 Oct 02 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 7 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Oct 02 8 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A NOTES 1997 Oct 02 9 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A NOTES 1997 Oct 02 10 Philips Semiconductors Product specification NPN video transistors BFQ262; BFQ262A NOTES 1997 Oct 02 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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