DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BYD33 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability k handbook, 4 columns a • Available in ammo-pack. MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS BYD33D − 200 V − 400 V BYD33J − 600 V BYD33K − 800 V BYD33M − 1000 V BYD33U − 1200 V BYD33V − 1400 V − 200 V continuous reverse voltage BYD33G − 400 V BYD33J − 600 V BYD33K − 800 V BYD33M − 1000 V BYD33U − 1200 V BYD33V − 1400 V average forward current − 1.30 A 1.26 A − 0.70 A − 0.67 A BYD33D to M − 12 A BYD33U and V − 11 A average forward current BYD33D to M BYD33U and V repetitive peak forward current 1996 Sep 18 Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 − BYD33D to M IFRM UNIT BYD33G BYD33U and V IF(AV) MAX. repetitive peak reverse voltage BYD33D IF(AV) MIN. Tamb = 65 °C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 °C; see Figs 6 and 7 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM BYD33 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Tamb = 65 °C; see Figs 8 and 9 BYD33D to M − 7 A BYD33U and V − 6 A − 20 A BYD33D to J − 10 mJ BYD33K to V − 7 mJ −65 +175 °C −65 +175 °C MIN. TYP. MAX. IF = 1 A; Tj = Tj max; see Figs 14 and 15 − − 1.1 V IF = 1 A; see Figs 14 and 15 − − 1.3 V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off Tstg storage temperature Tj junction temperature see Figs 12 and 13 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR trr PARAMETER forward voltage reverse avalanche breakdown voltage CONDITIONS IR = 0.1 mA BYD33D 300 − − V BYD33G 500 − − V BYD33J 700 − − V BYD33K 900 − − V BYD33M 1100 − − V BYD33U 1300 − − V BYD33V 1500 − − V VR = VRRMmax; see Fig.16 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.16 − − 100 µA − − 250 ns − − 300 ns − − 500 ns − 20 − pF reverse current reverse recovery time BYD33D to J BYD33K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A see Fig.21 BYD33U and V Cd diode capacitance 1996 Sep 18 UNIT f = 1 MHz; VR = 0 V; see Figs 17 and 18 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL dI R -------dt BYD33 series PARAMETER maximum slope of reverse recovery current BYD33D to J BYD33K to V CONDITIONS when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.20 MIN. TYP. MAX. UNIT − − 6 A/µs − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 60 K/W 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 18 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series GRAPHICAL DATA MGA857 1.6 MLB905 1.6 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) lead length 10 mm (A) lead length 10 mm 1.2 1.2 0.8 0.8 0.4 0.4 0 0 100 0 T tp ( oC) 100 0 200 BYD33D to M a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYD33U and V a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MLB902 1.2 MLB906 handbook, halfpage I F(AV) I F(AV) (A) (A) 0.8 0.8 0.4 0.4 0 100 Tamb ( o C) 0 200 0 100 BYD33D to M a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. BYD33U and V a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. Switched mode application. Fig.4 Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 Sep 18 200 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 1.2 handbook, halfpage 0 T tp ( oC) 5 Tamb ( o C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series MGA859 12 handbook, full pagewidth I FRM (A) 10 δ = 0.05 8 0.1 6 0.2 4 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 10 4 t p (ms) BYD33D to M Ttp = 55 °C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB909 12 handbook, full pagewidth I FRM (A) 10 δ = 0.05 8 0.1 6 0.2 4 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYD33U and V Ttp = 55°C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series MGA860 8 handbook, full pagewidth I FRM (A) 6 δ = 0.05 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYD33D to M Tamb = 65 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB910 8 handbook, full pagewidth I FRM (A) 6 δ = 0.05 4 0.1 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYD33U and V Tamb = 65 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series MGA869 2.4 a=3 P (W) 2.5 2 1.57 a = 3 2.5 2 1.57 P (W) 1.42 1.42 1.6 1.6 0.8 0.8 0 MLB904 2.4 handbook, halfpage handbook, halfpage 0.8 0 0 1.6 0 0.8 1.6 I F(AV) (A) I F(AV) (A) BYD33D to M a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. BYD33U and V a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MGA861 200 handbook, halfpage Tj ( oC) Tj ( oC) 100 100 D 0 0 G 400 J K 800 U M VR (V) 0 1200 BYD33D to M Solid line = VR. Dotted line = VRRM; δ = 0.5. 0 1000 V VR (V) 2000 BYD33U and V Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature as a function of reverse voltage. 1996 Sep 18 MLB907 200 handbook, halfpage Fig.13 Maximum permissible junction temperature as a function of reverse voltage. 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series MGC522 8 MGC523 8 handbook, halfpage handbook, halfpage IF (A) IF (A) 6 6 4 4 2 2 0 0 0 1 2 V F (V) 3 BYD33D to M Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. 0 1 2 V F (V) 3 BYD33U and V Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.14 Forward current as a function of forward voltage; maximum values. Fig.15 Forward current as a function of forward voltage; maximum values. MGA853 3 10halfpage handbook, MGA862 102 handbook, halfpage IR (µA) Cd (pF) 102 10 D, G, J 10 K, M 1 1 0 100 T j ( o C) 1 200 102 V R (V) 103 BYD33D to M f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.16 Reverse current as a function of junction temperature; maximum values. 1996 Sep 18 10 Fig.17 Diode capacitance as a function of reverse voltage; typical values. 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series MLB908 102 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 102 10 V R (V) 103 MGA200 BYD33U and V f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.18 Diode capacitance as a function of reverse voltage; typical values. Fig.19 Device mounted on a printed-circuit board. IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.20 Reverse recovery definitions. 1996 Sep 18 10 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers handbook, full pagewidth BYD33 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.21 Test circuit and reverse recovery time waveform and definition. 1996 Sep 18 11 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 max 28 min 3.8 max 28 min MBC051 Dimensions in mm. The marking band indicates the cathode. Fig.22 SOD81. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 18 12