PHILIPS BYD57J

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD57 series
Ultra-fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1998 Dec 04
1999 Nov 11
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec(1)
technology. The SOD87 is
• High maximum operating
temperature
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
handbook, 4 columns
a
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier
outline.
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
IF(AV)
PARAMETER
BYD57D
−
MAX.
UNIT
200
V
BYD57G
−
400
V
BYD57J
−
600
V
BYD57K
−
800
V
BYD57M
−
1000
V
BYD57U
−
1200
V
BYD57V
−
1400
V
BYD57D
−
200
V
BYD57G
−
400
V
continuous reverse voltage
BYD57J
−
600
V
BYD57K
−
800
V
BYD57M
−
1000
V
BYD57U
−
1200
V
BYD57V
−
1400
V
Ttp = 85 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
1.0
A
−
1.2
A
Tamb = 60 °C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
0.4
A
−
0.4
A
BYD57D to M
−
8.5
A
BYD57U and V
−
11
A
average forward current
BYD57U and V
average forward current
BYD57D to M
BYD57U and V
IFRM
MIN.
repetitive peak reverse voltage
BYD57D to M
IF(AV)
CONDITIONS
repetitive peak forward current
1999 Nov 11
Ttp = 85 °C; see Figs 6 and 7
2
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
SYMBOL
IFRM
BYD57 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Tamb = 60 °C; see Figs 8 and 9
BYD57D to M
−
3.0
A
BYD57U and V
−
3.7
A
5.0
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj = 25 °C
prior to surge; VR = VRRMmax
−
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
Tstg
storage temperature
Tj
junction temperature
10
mJ
−65
+175
°C
−65
+175
°C
MIN.
TYP.
MAX.
−
−
2.1
V
−
−
1.7
V
−
−
3.6
V
−
−
2.3
V
300
−
−
V
see Fig.12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
BYD57D to M
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 13 and 14
BYD57U and V
VF
forward voltage
BYD57D to M
IF = 1 A;
see Figs 13 and 14
BYD57U and V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD57D
IR
trr
BYD57G
500
−
−
V
BYD57J
700
−
−
V
BYD57K
900
−
−
V
BYD57M
1100
−
−
V
BYD57U
1300
−
−
V
BYD57V
1500
−
−
V
VR = VRRMmax;
see Fig.15
−
−
5
µA
VR = VRRMmax;
Tj = 165 °C; see Fig.15
−
−
100
µA
reverse current
reverse recovery time
BYD57D to J
BYD57K and M
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.18
BYD57U and V
Cd
diode capacitance
1999 Nov 11
UNIT
f = 1 MHz; VR = 0;
see Fig.16
3
−
−
30
ns
−
−
75
ns
−
−
150
ns
−
20
−
pF
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
SYMBOL
dI R
-------dt
BYD57 series
PARAMETER
maximum slope of reverse recovery
current
BYD57D to J
BYD57K and M
CONDITIONS
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
see Fig.19
BYD57U and V
MIN.
TYP.
MAX.
UNIT
−
−
7
A/µs
−
−
6
A/µs
−
−
5
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
UNIT
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the ‘General Part of associated Handbook’.
1999 Nov 11
4
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
GRAPHICAL DATA
MSA961
2.0
MGM273
2.0
handbook, halfpage
I F(AV)
(A)
1.6
IF(AV)
(A)
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
0
40
80
120
0
160
200
T tp (oC)
0
40
80
BYD57D to M
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYDU and V
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
120
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MSA960
0.5
160
200
Ttp (°C)
MGM272
0.6
handbook, halfpage
I F(AV)
IF(AV)
(A)
(A)
0.4
0.4
0.3
0.2
0.2
0.1
0
0
0
40
80
120
160
200
Tamb ( o C)
0
BYD57D to M
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
Fig.4
80
120
160
200
Tamb (°C)
BYD57U and V
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1999 Nov 11
40
Fig.5
5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MSA964
10
handbook, full pagewidth
I FRM
δ = 0.05
(A)
8
6
0.1
4
0.2
2
0.5
1
0
10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
BYD57D to M
Ttp = 85 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGM275
16
handbook, full pagewidth
IFRM
(A)
12
δ = 0.05
8
0.1
0.2
4
0.5
1
0
10−2
10−1
1
10
102
103
tp (ms)
104
BYD57U and V
Ttp = 85 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
6
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MSA965
4
handbook, full pagewidth
I FRM
(A)
3
2
δ = 0.05
0.1
0.2
1
0.5
1
0
10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
BYD57D to M
Tamb = 60 °C; Rth j-a = 150K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGM274
4
handbook, full pagewidth
IFRM
δ = 0.05
(A)
3
0.1
2
0.2
1
0.5
1
0
10−2
10−1
1
10
102
103
tp (ms)
104
BYD57U and V
Tamb = 60 °C; Rth j-a = 150K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
7
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MGC525
MGM271
5
3
handbook, halfpage
handbook, halfpage
P
(W)
a=3 2.5 2
P
(W)
1.57 1.42
a = 3 2.5 2 1.57
4
1.42
2
3
2
1
1
0
0
0
0.5
IF(AV) (A)
0
1.0
0.4
0.8
1.2
1.6
2
IF(AV) (A)
BYD57D to M
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYD57U and V
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MBK457
200
MSA963
4
handbook, halfpage
handbook, halfpage
IF
(A)
Tj
( oC)
3
100
2
D
0
G
J
K
0
M
1000
U
V
1
VR (V)
2000
0
4
6
V F (V)
8
BYD57D to M
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
1999 Nov 11
2
Fig.13 Forward current as a function of forward
voltage; maximum values.
8
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
MGM270
4
MGC532
3
10halfpage
handbook,
handbook, halfpage
IF
(A)
IR
(µA)
3
10 2
2
10
1
0
0
1
2
3
VF (V)
1
4
BYD57U and V
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
0
100
200
o
Tj ( C)
VR = VRRMmax.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Reverse current as a function of junction
temperature; maximum values.
MGC524
10 2
handbook, halfpage
50
Cd
(pF)
4.5
10
50
2.5
1
1
10
102
VR (V)
1.25
103
MSB213
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.16 Diode capacitance as a function of reverse
voltage; typical values.
1999 Nov 11
Fig.17 Printed-circuit board for surface mounting.
9
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
handbook, full pagewidth
BYD57 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
IF halfpage
ndbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.19 Reverse recovery definitions.
1999 Nov 11
10
MAM057
Philips Semiconductors
Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers
BYD57 series
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D1
L
L
H
DIMENSIONS (mm are the original dimensions)
UNIT
D
D1
H
L
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D
0
1
2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
SOD87
100H03
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-03-31
99-06-04
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 11
11
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SCA 68
© Philips Electronics N.V. 1999
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Printed in The Netherlands
135002/04/pp12
Date of release: 1999
Nov 11
Document order number:
9397 750 06267