DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV36 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 May 30 1996 Jul 01 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability 2/3 page k(Datasheet) • Available in ammo-pack. construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER CONDITIONS IF(AV) − 200 V BYV36B − 400 V − 600 V BYV36D − 800 V BYV36E − 1000 V BYV36F − 1200 V BYV36G − 1400 V BYV36A − 200 V BYV36B − 400 V continuous reverse voltage BYV36C − 600 V BYV36D − 800 V BYV36E − 1000 V BYV36F − 1200 V BYV36G − 1400 V − 1.6 A average forward current BYV36D and E Ttp = 60 °C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 BYV36F and G average forward current BYV36A to C BYV36D and E Tamb = 60 °C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 BYV36F and G 1996 Jul 01 UNIT BYV36C BYV36A to C IF(AV) MAX. repetitive peak reverse voltage BYV36A VR MIN. 2 − 1.5 A − 1.5 A − 0.87 A − 0.81 A − 0.81 A Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM IFRM BYV36 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Ttp = 60 °C; see Figs 8; 9 and 10 BYV36A to C − 18 A BYV36D and E − 17 A BYV36F and G − 15 A BYV36A to C − 9 A BYV36D and E − 8 A BYV36F and G − 8 A repetitive peak forward current Tamb = 60 °C; see Figs 11; 12 and 13 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 30 A ERSM non-repetitive peak reverse avalanche energy − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Figs 17 and 18 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 1 A; Tj = Tj max; see Figs 19; 20 and 21 − − 1.00 V − − 1.05 V BYV36F and G − − 1.05 V − − 1.35 V − − 1.45 V − − 1.45 V 300 − − V forward voltage BYV36A to C IF = 1 A; see Figs 19; 20 and 21 BYV36D and E BYV36F and G V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV36A IR 1996 Jul 01 UNIT BYV36D and E BYV36A to C VF CONDITIONS BYV36B 500 − − V BYV36C 700 − − V BYV36D 900 − − V BYV36E 1100 − − V BYV36F 1300 − − V BYV36G 1500 − − V VR = VRRMmax; see Fig.22 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.22 − − 150 µA reverse current 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL trr BYV36 series PARAMETER MIN. TYP. MAX. − − 100 ns − − 150 ns − − 250 ns − 45 − pF BYV36D and E − 40 − pF BYV36F and G − 35 − pF − − 7 A/µs − − 6 A/µs − − 5 A/µs reverse recovery time BYV36A to C BYV36D and E CONDITIONS when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 26 BYV36F and G Cd diode capacitance f = 1 MHz; VR = 0 V; see Figs 23 and 24 BYV36A to C dI R -------dt maximum slope of reverse recovery when switched from IF = 1 A to VR ≥ 30 V and current dIF/dt = −1 A/µs; BYV36A to C see Fig.27 BYV36D and E BYV36F and G UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 46 K/W 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25. For more information please refer to the “General Part of associated Handbook”. 1996 Jul 01 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series GRAPHICAL DATA MSA867 1.6 MSA866 1.6 I F(AV) I F(AV) (A) (A) 1.2 1.2 20 15 20 15 10 lead length (mm) 0.8 0.8 0.4 0.4 0 10 lead length (mm) 0 100 0 T tp ( oC) 200 T tp ( oC) 200 BYV36D and E a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYV36A to C a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 100 0 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MBD419 2.0 I F(AV) (A) 1.6 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). MSA865 1.2 handbook, halfpage handbook, halfpage I F(AV) (A) lead length 10 mm 0.8 1.2 0.8 0.4 0.4 0 0 0 100 o Ttp ( C) 200 0 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). 1996 Jul 01 Tamb ( oC) 200 BYV36A to C a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. BYV36F and G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.4 100 Fig.5 5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MSA864 1.2 MBD420 1.2 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 0.8 0.8 0.4 0.4 0 0 100 0 Tamb ( oC) 200 0 BYV36D and E a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.6 100 T amb ( oC) 200 BYV36F and G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.7 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). MBD446 20 I FRM (A) δ = 0.05 16 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36A to C Ttp = 60°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jul 01 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MBD447 20 I FRM (A) 16 δ = 0.05 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36D and E Ttp = 60°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB529 16 I FRM (A) δ = 0.05 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36F and G Ttp = 60°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jul 01 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MBD441 10 I FRM (A) δ = 0.05 8 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36A to C Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD444 10 I FRM (A) 8 δ = 0.05 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36D and E Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jul 01 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MLB530 8 δ = 0.05 I FRM (A) 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 2 10 10 3 10 4 t p (ms) BYV36F and G Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MSA861 3 2.5 2 1.57 P (W) a=3 MSA862 3 2.5 2 1.57 P (W) 1.42 2 2 1 1 0 a=3 1.42 0 0 1 I F(AV) (A) 2 0 BYV36A to C I F(AV) (A) 2 BYV36D and E a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.14 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Jul 01 1 Fig.15 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MBD429 3 MSA857 200 handbook, halfpage a=3 P (W) 2.5 2 1.57 1.42 Tj ( oC) 2 100 1 A B C D E 0 0 0 1 I F(AV)(A) 0 2 400 800 V R (V) 1200 BYV36F and G a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. BYV36A to E Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.16 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.17 Maximum permissible junction temperature as a function of reverse voltage. MSA863 MLB599 200 10 handbook, halfpage handbook, halfpage IF (A) 8 Tj ( oC) 6 100 4 F G 2 0 0 0 1000 VR (V) 2000 0 BYV36F and G BYV36A to C Solid line = VR. Dotted line = VRRM; δ = 0.5. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.18 Maximum permissible junction temperature as a function of reverse voltage. 1996 Jul 01 1 2 VF (V) 3 Fig.19 Forward current as a function of forward voltage; maximum values. 10 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MBD424 MLB531 10 10 handbook, halfpage handbook, halfpage IF (A) IF (A) 8 8 6 6 4 4 2 2 0 0 0 1 2 3 VF (V) 0 4 1 2 VF (V) 3 BYV36F and G Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. BYV36D and E Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.20 Forward current as a function of forward voltage; maximum values. Fig.21 Forward current as a function of forward voltage; maximum values. MGC550 103 handbook, halfpage MSA868 10 2 handbook, halfpage IR (µA) Cd (pF) 102 BYV36A,B,C 10 BYV36D,E 10 1 1 0 100 Tj (°C) 1 200 102 V R (V) 103 BYV36A to E. f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.22 Reverse current as a function of junction temperature; maximum values. 1996 Jul 01 10 Fig.23 Diode capacitance as a function of reverse voltage, typical values. 11 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MBD436 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 2 10 10 3 V R (V) 10 4 MGA200 BYV36F and G. f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.24 Diode capacitance as a function of reverse voltage, typical values. DUT handbook, full pagewidth Fig.25 Device mounted on a printed-circuit board. IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.26 Test circuit and reverse recovery time waveform and definition. 1996 Jul 01 12 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.27 Reverse recovery definitions. 1996 Jul 01 13 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max BYV36 series a 28 min 0.81 max MBC880 Fig.28 SOD57. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 01 14