INTEGRATED CIRCUITS NE/SA/AU5232 Matched dual high-performance low-voltage operational amplifier Product data 2002 May 21 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 DESCRIPTION PIN CONFIGURATION The NE/SA/AU5232 is a matched, low voltage, high performance dual operational amplifier. Among its unique input and output characteristics is the capability for both input and output rail-to-rail operation, particularly critical in low voltage applications. The output swings to less than 50 mV of both rails across the entire power supply range. The NE/SA/AU5232 is capable of delivering 5.5 V peak-to-peak across a 600 Ω load and will typically draw only 700 µA per amplifier. The bandwidth is 2.5 MHz and the 1% settling time is 1.4 µs. D, N Packages OUTPUT A 1 8 V+ INVERTING INPUT A 2 7 OUTPUT B NON INVERTING INPUT A 3 6 INVERTING INPUT B V– 4 5 NON INVERTING INPUT B A –+ B +– SL01163 FEATURES • Wide common-mode input voltage range: 250 mV beyond both Figure 1. Pin configuration. rails • Output swing within 50 mV of both rails • Functionality to 1.8 V typical • Low current consumption: 700 µA per amplifier • ±15 mA output current capability • Unity gain bandwidth: 2.5 MHz • Slew rate: 0.8 V/µs • Low noise: 33 nV/√Hz • Electrostatic discharge protection • Short-circuit protection • Output inversion prevention APPLICATIONS • Automotive electronics • Signal conditioning and sensing amplification • Portable instrumentation – Test and measurement – Medical monitors and diagnostics – Remote meters • Audio equipment • Security systems • Communications – Pagers – Cellular telephone – LAN – 5 V Datacom bus • Error amplifier in motor drives • Transducer buffer amplifier ORDERING INFORMATION ORDER CODE TEMPERATURE RANGE DWG # NE5232D 8-Pin Plastic Small Outline (SO) package 0 °C to +70 °C SOT96-1 NE5232N 8-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C SOT97-1 SA5232D 8-Pin Plastic Small Outline (SO) package –40 °C to +85 °C SOT96-1 SA5232N 8-Pin Plastic Dual In-Line Package (DIP) –40 °C to +85 °C SOT97-1 AU5232N 8-Pin Plastic Dual In-Line Package (DIP) –40 °C to +125 °C SOT97-1 AU5232D 8-Pin Plastic Small Outline (SO) package –40 °C to +125 °C SOT96-1 2002 May 21 DESCRIPTION 2 853–2347 28261 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VCC Single supply voltage VESD ESD protection voltage at any pin5 human body model robot model VS Dual supply voltage VDP Voltage at any device pin1 IDP Current into any device pin1 RATING UNIT 7 V 2000 200 V V ±3.5 V VS ± 0.5 V ±50 mA 0.5 V V Vi(dif) Differential input voltage2 Vi(CM) Common-mode input voltage (positive) VCC + 0.5 Vi(CM) Common-mode input voltage (negative) VEE – 0.5 V PD Power dissipation3 500 mW Tj Operating junction temperature3 +150 °C 7 V –65 to +150 °C +230 °C VSC Supply voltage allowing indefinite output short circuit to either rail3,4 Tstg Storage temperature range Tsld Lead soldering temperature (10 sec max) θJA Thermal impedance 8-pin plastic DIP 8-pin plastic SO °C/W °C/W NOTES: 1. Each pin is protected by ESD diodes. The voltage at any pin is limited by the ESD diodes. 2. The differential input of each amplifier is limited by two internal diodes, connected in parallel and opposite to each other. For more differential input range, use differential resistors in series with the input pins. 3. The maximum operating junction temperature is +150 °C. At elevated temperatures, devices must be derated according to the package thermal resistance and device mounting conditions. Derates above +25 °C: N package at 9.5 mW/°C; D package at 6.25 mW/°C. 4. Simultaneous short circuits of two amplifiers to the positive or negative rail can exceed the power dissipation ratings and cause eventual destruction of the device. 5. Guaranteed by design. RECOMMENDED OPERATING CONDITIONS SYMBOL VCC RATING UNIT Single supply voltage PARAMETER +2 to +5.5 V Dual supply voltage ±1 to ±2.75 V Vi(CM) Common-mode input voltage (positive) VCC + 0.25 V Vi(CM) Common-mode input voltage (negative) VEE – 0.25 V Tamb Temperature NE SA AU 0 to +70 –40 to +85 –40 to +125 °C °C °C VS 2002 May 21 3 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 DC ELECTRICAL CHARACTERISTICS VCC = 2 V to 5.5 V, VEE = 0 V, Tamb = 25 °C; VEE < Vi(CM) < VCC; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS NE5232 MIN ICC Supply current VOS Offset voltage ∆VOS/∆T ∆VOS IOS ∆IOS/∆T IB ∆IB/∆T ∆IB Vi(CM) Offset voltage difference between anyy amplifiers in the same package at the same common mode level1 Offset current Input bias current1 Input bias current difference between any amplifier in the same package ackage at the same common mode level. Common-mode input range Power supplyy rejection j ratio Peak load current,, sink and source Open loop voltage gain Open-loop Output Out ut voltage swing VOUT Output voltage g swing g for VCC = 2.75 V, VEE = –2.75 V MIN TYP MAX 2.0 1.4 2.0 1.5 2.3 1.6 2.4 ±0.2 ±4 ±0.2 ±4 ±0.4 ±5 ±0.6 ±5 4 mA mV µV/°C 4 0.4 3 0.4 3 0.8 4 1.2 4 ±3 ±20 ±3 ±30 ±4 ±30 ±6 ±60 nA 0.02 ±.3 0.03 ±.3 nA/°C mV Over full temp. range Over full temp. range VEE < Vi(CM) < VEE +0.5 V –200 –90 –200 –90 Over full temp. range –225 –100 –250 –150 VEE +1 V < Vi(CM) < VCC 25 70 25 75 Over full temp. range 35 100 35 120 Input bias current drift with temperature Common-mode rejection j ratio, large signal AVOL O 1.4 Offset current drift with temperature CMRR IL VCC = 5.5V VCC = 5.5 V; over full temp. range Offset voltage drift with temperature Common-mode rejection ratio, ratio small signal PSRR MAX Over full temp. range UNIT SA5232 TYP 0.5 0.5 nA/°C VEE < Vi(CM) < VEE +0.5 V 10 30 10 30 Over full temp. range 25 50 50 70 VEE +1 V < Vi(CM) < VCC 5 20 5 20 Over full temp. range 15 30 25 VEE–0.25 VCC+0.25 VEE–0.25 VCC+0.25 VOS ≤ 6 mV; Over full temp. range VEE–0.1 VCC+0.1 VEE–0.1 VCC+0.1 VEE < Vi(CM) < VEE+0.5V; VEE+1V < Vi(CM) < VCC 80 100 80 Over full temp. range 75 100 75 VEE < Vi(CM) < VCC 65 90 65 Over full temp. range 60 80 60 VEE < Vi(CM) < VCC 80 100 80 100 Over full temp. range 80 90 80 90 10 12 10 12 5 8 5 8 90 110 90 110 Over full temp. range 90 nA 50 VOS ≤ 6 mV Over full temp. range nA V 100 dB 90 dB mA dB 90 IPEAK = 0.1 mA VEE+0.05 VCC–0.05 VEE+0.1 VCC–0.1 IPEAK = 10 mA VEE+0.25 VCC–0.25 VEE+0.25 VCC–0.25 IPEAK = 5 mA; over full temp. range VEE+0.22 VCC–0.22 VEE+0.2 VCC–0.2 RL = 2 kΩ VEE+0.2 VCC–0.2 VEE+0.2 VCC–0.2 RL = 600 Ω VEE+0.25 VCC–0.25 VEE+0.25 VCC–0.25 V V NOTE: 1. These parameters are measured for VEE < VCM < VEE+0.5 V and for VEE+1 V < VCM < VCC. By design these parameters are intermediate for common mode ranges between the measured regions. 2002 May 21 4 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 DC ELECTRICAL CHARACTERISTICS VCC = 2 V to 5.5 V, VEE = 0 V, Tamb = 25 °C; VEE < Vi(CM) < VCC; unless otherwise stated. LIMITS SYMBOL TEST CONDITIONS PARAMETER MIN ICC Supply current VOS Offset voltage ∆VOS/∆T ∆VOS IOS ∆IOS/∆T IB TYP MAX VCC = 5.5V 1.4 2.0 VCC = 5.5 V; over full temp. range 1.6 2.4 ±0.2 ±4 ±0.6 ±5 Over full temp. range Offset voltage drift with temperature Over full temp. range Offset current Over full temp. range Offset current drift with temperature Input bias current1 ∆IB Input bias current difference between anyy amplifier in the same package at the same common mode level. Common-mode input range CMRR Common mode rejection ratio, Common-mode ratio large signal IL AVOL O 4 ±3 ±30 ±6 ±60 nA 0.03 ±.3 nA/°C –90 –250 –150 25 75 35 120 0.5 Common-mode rejection j ratio,, small signal g PSRR 1.2 –200 10 30 Over full temp. range 50 70 VEE +1 V < Vi(CM) < VCC 5 20 Power supply rejection ratio Peak load current, current sink and source VEE–0.25 VCC+0.25 VOS ≤ 6 mV; Over full temp. range VEE–0.1 VCC+0.1 VEE < Vi(CM) < VEE+0.5V; VEE+1V < Vi(CM) < VCC 80 Over full temp. range 70 VEE < Vi(CM) < VCC 65 Over full temp. range 55 VEE < Vi(CM) < VCC 80 100 Over full temp. range 75 90 10 12 5 8 90 110 Over full temp. range Output Out ut voltage swing VOUT Output voltage g swing g for VCC = 2.75 V, VEE = –2.75 V nA nA 50 VOS ≤ 6 mV Over full temp. range Open loop voltage gain Open-loop 25 mV nA/°C VEE < Vi(CM) < VEE +0.5 V Over full temp. range Vi(CM) 3 Over full temp. range Input bias current drift with temperature mV 0.4 VEE < Vi(CM) < VEE +0.5 V VEE +1 V < Vi(CM) < VCC mA µV/°C 4 Offset voltage g difference between any y amplifiers in the same package at the same common mode level1 Over full temp. range ∆IB/∆T UNIT AU5232 V 100 dB 90 dB mA dB 90 IPEAK = 0.1 mA VEE+0.1 VCC–0.1 IPEAK = 10 mA VEE+0.25 VCC–0.25 IPEAK = 5 mA; over full temp. range VEE+0.2 VCC–0.2 RL = 2 kΩ VEE+0.2 VCC–0.2 RL = 600 Ω VEE+0.25 VCC–0.25 V V NOTE: 1. These parameters are measured for VEE < VCM < VEE+0.5 V and for VEE+1 V < VCM < VCC. By design these parameters are intermediate for common mode ranges between the measured regions. 2002 May 21 5 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 AC ELECTRICAL CHARACTERISTICS Tamb = +25 °C; VCC = 2 V to 5.5 V; RL = 10 kΩ; CL = 100 pF; unless otherwise stated. LIMITS SYMBOL PARAMETER NE5232 TEST CONDITIONS MIN TYP SR Slew rate Over full temperature range 0.5 0.8 BW Unity gain bandwidth: –3 dB Over full temperature range 2 2.5 θM Phase Margin tS 1% settling time VN Input referred voltage noise THD Total harmonic distortion SA/AU5232 MAX 4.0 MIN TYP 0.5 0.8 2 2.5 UNIT MAX V/µs 4.0 MHz CL = 50 pF 55 55 AV = 1, 1 V step 1.4 1.4 deg µs AV = 1, RS = 0 Ω, at 1 kHz 33 33 nV/Hz1/2 10 kHz, 1VP-P, AV = 1 0.1 0.1 % OUTPUT INVERSION PREVENTION VIN VCC VIN VCC VOUT VCC VOUT 47 kΩ 5V 5V + – VIN VGND t VOUT t VGND 47 kΩ VGND CONVENTIONAL OP AMP PHILIPS NE5232 Figure 2. Output inversion prevention. 2002 May 21 6 SL01617 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 SO8: plastic small outline package; 8 leads; body width 3.9 mm 2002 May 21 7 SOT96-1 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 DIP8: plastic dual in-line package; 8 leads (300 mil) 2002 May 21 8 SOT97-1 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 NOTES 2002 May 21 9 Philips Semiconductors Product data Matched dual high-performance low-voltage operational amplifier NE/SA/AU5232 Data sheet status Data sheet status [1] Product status [2] Definitions Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Date of release: 06-02 For sales offices addresses send e-mail to: [email protected]. Document order number: 2002 May 21 10 9397 750 09837