PHILIPS BUK475-200A

Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of BUK455-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The
device is intended for use in Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
PINNING - SOT186A
PIN
BUK475-200A/B
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
VDS
ID
Ptot
Tj
RDS(ON)
BUK475
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
-200A
200
7.6
30
150
0.23
-200B
200
7
30
150
0.28
V
A
W
˚C
Ω
PIN CONFIGURATION
SYMBOL
DESCRIPTION
d
case
1
gate
2
drain
3
source
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
RGS = 20 kΩ
-
-
200
200
30
V
V
V
ID
ID
IDM
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
-
Ptot
Tstg
Tj
Total power dissipation
Storage temperature
Junction temperature
Ths = 25 ˚C
-
- 55
-
-200A
7.6
4.8
30
-200B
7
4.4
28
A
A
A
30
150
150
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
with heatsink compound
Rth j-a
June 1996
1
MIN.
TYP.
MAX.
UNIT
-
-
4.17
K/W
-
55
-
K/W
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-200A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
200
-
-
V
VDS = VGS; ID = 1 mA
VDS = 200 V; VGS = 0 V; Tj = 25 ˚C
VDS = 200 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK475-200A
BUK475-200B
ID = 7 A
2.1
-
3.0
1
0.1
10
0.2
0.22
4.0
10
1.0
100
0.23
0.28
V
µA
mA
nA
Ω
Ω
MIN.
TYP.
MAX.
UNIT
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 7 A
6
8.4
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1400
190
55
1750
250
80
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
18
35
85
35
30
60
120
50
ns
ns
ns
ns
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
2500
V
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
-
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
7.6
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 7.6 A ; VGS = 0 V
-
1.0
30
1.5
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 7.6 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
150
1.3
-
ns
µC
June 1996
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-200A/B
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 14 A ; VDD ≤ 100 V ;
VGS = 10 V ; RGS = 50 Ω
Normalised Power Derating
PD%
120
100
with heatsink compound
110
MIN.
TYP.
MAX.
UNIT
-
-
100
mJ
ID / A
BUK445-200A,B
ID
S/
100
90
)=
VD
A
B
N
tp = 10 us
O
80
70
(
DS
10
R
100 us
60
1 ms
50
40
DC
1
10 ms
100 ms
30
20
10
0
0
20
40
60
80
Ths / C
100
120
0.1
140
1
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ths)
10
with heatsink compound
110
100
VDS / V
1000
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating
ID%
120
10
Zth / (K/W)
BUKx45-lv
D=
100
90
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
80
70
60
50
40
30
PD
tp
D=
20
10
0
0
20
40
60
80
Ths / C
100
120
0.001
1E-07
140
1E-05
1E-03
t/s
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
June 1996
T
tp
T
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
30
BUK475-200A/B
BUK455-200A
ID / A
15
20
VGS / V =
gfs / S
BUK455-200A
6
10
8
7
20
10
5
10
5
4
0
0
2
4
6
8
10 12
VDS / V
14
16
18
0
20
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
1.0
5
2.4
2.2
2.0
1.8
1.6
1.4
5.5
6
0.6
0.4
10
0.2
20
12
16
ID / A
20
24
28
Normalised RDS(ON) = f(Tj)
a
0
0
0
4
8
12
16
ID / A
20
24
-60 -40 -20
28
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
28
8
1.2
1.0
0.8
0.6
0.4
0.2
8
VGS / V =
4
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
BUK455-200A
4.5
4
0.8
0
ID / A
0
20
40 60
Tj / C
80
100 120 140
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7 A; VGS = 10 V
VGS(TO) / V
BUK455-200A
max.
4
24
20
typ.
3
16
min.
2
12
Tj / C =
8
150
25
1
4
0
0
0
2
4
6
8
-60
10
VGS / V
-20
0
20
40
60
Tj / C
80
100
120
140
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
June 1996
-40
4
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
BUK475-200A/B
IF / A
30
BUK455-200A
1E-02
2%
1E-03
typ
20
98 %
Tj / C = 150
25
1E-04
10
1E-05
1E-06
0
0
1
2
VGS / V
3
4
0
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
2
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
BUK4y5-200
C / pF
10000
1
VSDS / V
120
110
WDSS%
100
90
Ciss
1000
80
70
60
50
Coss
40
100
30
Crss
20
10
10
0
0
20
20
40
40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12
60
80
100
Ths / C
120
140
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 14 A
BUK455-200
VGS / V
VDD
+
10
L
VDS / V =40
VDS
8
160
6
-
VGS
-ID/100
T.U.T.
0
4
RGS
1
0
0
10
20
QG / nC
30
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 14 A; parameter VDS
June 1996
R 01
shunt
5
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
June 1996
6
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-200A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
June 1996
7
Rev 1.200