Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. PINNING - SOT186A PIN BUK475-100A/B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDS ID Ptot Tj RDS(ON) BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance -100A 100 14 30 150 0.08 -100B 100 12 30 150 0.1 V A W ˚C Ω PIN CONFIGURATION SYMBOL DESCRIPTION d case 1 gate 2 drain 3 source g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS Drain-source voltage Drain-gate voltage Gate-source voltage RGS = 20 kΩ - - 100 100 30 V V V ID ID IDM Drain current (DC) Drain current (DC) Drain current (pulse peak value) Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C - Ptot Tstg Tj Total power dissipation Storage temperature Junction temperature Ths = 25 ˚C - - 55 - -100A 14 8.7 56 -100B 12 7.5 48 A A A 30 150 150 W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound Rth j-a November 1996 1 MIN. TYP. MAX. UNIT - - 4.17 K/W - 55 - K/W Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-100A/B STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA 100 - - V VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK475-100A BUK475-100B ID = 13 A 2.1 - 3.0 1 0.1 10 0.07 0.08 4.0 10 1.0 100 0.08 0.1 V µA mA nA Ω Ω MIN. TYP. MAX. UNIT VGS(TO) IDSS IDSS IGSS RDS(ON) DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 13 A 7.0 13.5 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1650 350 100 2000 500 150 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω - 15 25 100 50 30 40 160 80 ns ns ns ns Ld Internal drain inductance - 4.5 - nH Ls Internal source inductance Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT 2500 V ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink - - 10 - pF MIN. TYP. MAX. UNIT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR - - - 14 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 14 A ; VGS = 0 V - 1.3 56 1.7 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 14 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V - 90 0.70 - ns µC November 1996 2 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-100A/B AVALANCHE LIMITING VALUE Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 26 A ; VDD ≤ 50 V ; VGS = 10 V ; RGS = 50 Ω Normalised Power Derating PD% 120 100 with heatsink compound 110 MIN. TYP. MAX. UNIT - - 100 mJ ID / A BUK445-100A,B A /ID S 100 90 ) ON = VD tp = 10 us B S( 100 us RD 80 70 10 1 ms 60 10 ms 50 40 100 ms DC 1 30 20 10 0 0 20 40 60 80 Ths / C 100 120 0.1 140 1 10 with heatsink compound 110 1000 Fig.3. Safe operating area. Ths = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Normalised Current Derating ID% 100 VDS / V Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths) 120 10 Zth / (K/W) BUKx45-lv D= 100 90 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0 80 70 60 50 40 30 PD tp D= 20 10 0 0 20 40 60 80 Ths / C 100 120 0.001 1E-07 140 1E-05 1E-03 t/s t 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V November 1996 T tp T 3 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor 50 BUK475-100A/B ID / A gfs / S BUK455-100A 20 15 10 40 BUK455-100A 15 8 7 10 30 6 VGS / V = 20 5 5 10 0 4 0 2 4 6 8 0 10 0 20 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 5 4.5 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V BUK455-100A RDS(ON) / Ohm 0.5 40 ID / A VDS / V 2.0 Normalised RDS(ON) = f(Tj) a 5.5 0.4 6 1.5 VGS / V = 0.3 6.5 1.0 7 0.2 7.5 0.5 10 0.1 20 0 0 0 20 -60 -40 -20 40 0 20 ID / A Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 50 ID / A 25 80 100 120 140 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VGS = 10 V VGS(TO) / V BUK455-100A Tj / C = 40 60 Tj / C max. 4 150 40 typ. 3 30 min. 2 20 1 10 0 0 0 2 4 6 8 -60 10 VGS / V -20 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj November 1996 -40 4 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor SUB-THRESHOLD CONDUCTION ID / A 1E-01 BUK475-100A/B IF / A 60 BUK455-100A 50 1E-02 2% 1E-03 typ 40 98 % 30 Tj / C = 150 1E-04 25 20 1E-05 10 1E-06 0 0 1 2 VGS / V 3 4 0 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS C / pF 10000 1 VSDS / V 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj BUK4y5-100 120 110 WDSS% 100 90 Ciss 80 1000 70 60 Coss 50 100 40 Crss 30 20 10 0 10 0 20 20 40 40 VDS / V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 12 60 80 100 Ths / C 120 140 Fig.15. Normalised avalanche energy rating. WDSS% = f(Ths); conditions: ID = 26 A BUK455-100 VGS / V VDD + VDS / V =20 10 L 80 8 VDS - VGS 6 -ID/100 T.U.T. 0 4 2 RGS R 01 shunt 0 0 10 20 QG / nC 30 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 26 A; parameter VDS November 1996 5 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-100A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". November 1996 6 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-100A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1996 7 Rev 1.200