DISCRETE SEMICONDUCTORS DATA SHEET BFQ256; BFQ256A PNP video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification PNP video transistors BFQ256; BFQ256A FEATURES DESCRIPTION • High breakdown voltages PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. 4 page PINNING PIN DESCRIPTION 1 emitter APPLICATIONS 2 base • Buffer/driver in high-resolution colour graphics monitors. 3 emitter 4 collector 1 2 Top view Fig.1 3 MSB002 - 1 Simplified outline (SOT223). QUICK REFERENCE DATA SYMBOL VCBO VCER PARAMETER collector-base voltage CONDITIONS TYP. MAX. UNIT open emitter BFQ256 − − −100 V BFQ256A − − −115 V BFQ256 − − −95 V BFQ256A − − −110 V − − −300 mA Ts ≤ 115 °C; note 1 − − 2 W 20 30 − BFQ256 1 1.3 − GHz BFQ256A 0.8 1.2 − GHz collector-emitter voltage RBE = 100 Ω IC collector current (DC) Ptot total power dissipation hFE DC current gain IC = −50 mA; VCE = −10 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz Note 1. Ts is the temperature at the soldering point of the collector lead. 1997 Oct 02 MIN. 2 Philips Semiconductors Product specification PNP video transistors BFQ256; BFQ256A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BFQ256 − −100 V BFQ256A − −115 V BFQ256 − −65 V BFQ256A − −95 V BFQ256 − −95 V BFQ256A − −110 V − −3 V − −300 mA − 2 W collector-emitter voltage collector-emitter voltage open base RBE = 100 Ω VEBO emitter-base voltage IC collector current (DC) Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C open collector Ts ≤ 115 °C; note 1; see Fig.3 Note 1. Ts is the temperature at the soldering point of the collector lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT 30 K/W thermal resistance from junction to soldering point Ts ≤ 115 °C; Ptot = 2 W; notes 1 and 2 Notes 1. Ts is the temperature at the soldering point of the collector lead. 2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm). 1997 Oct 02 3 Philips Semiconductors Product specification PNP video transistors BFQ256; BFQ256A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS collector-base breakdown voltage V(BR)CBO MIN. TYP. MAX. UNIT IC = −100 µA; IE = 0 BFQ256 −100 − − V BFQ256A −115 − − V collector-emitter breakdown voltage IC = −10 mA; IB = 0 V(BR)CEO BFQ256 −65 − − V BFQ256A −95 − − V collector-emitter breakdown voltage IC = −1 mA; RBE = 100 Ω V(BR)CER BFQ256 −95 − − V BFQ256A −110 − − V − −100 µA µA ICES collector-emitter cut-off current IB = 0; VCE = −50 V − ICBO collector-base cut-off current IE = 0; VCB = −50 V − − −20 hFE DC current gain IC = −50 mA; VCE = −10 V; see Fig.4 20 30 − Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 1.9 − pF Ccb collector-base capacitance IC = ic = 0; VCB = −10 V; f = 1 MHz; see Fig.6 − 1.6 − pF fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz; see Fig.5 1 1.3 − GHz 0.8 1.2 − GHz BFQ256 BFQ256A MRA606 −400 handbook, halfpage MRA600 3 handbook, halfpage IC (mA) Ptot (W) −300 2 −200 1 −100 BFQ256 0 0 −20 −40 −60 −80 BFQ256A 0 −100 −120 VCER (V) 0 50 100 150 Ts (oC) RBE ≤ 100 Ω. Fig.2 DC SOAR. 1997 Oct 02 Fig.3 Power derating curve. 4 200 Philips Semiconductors Product specification PNP video transistors BFQ256; BFQ256A MBB449 50 MBC970 handbook,2.0 halfpage handbook, halfpage hFE fT (GHz) 40 1.5 BFQ256 BFQ256A 30 1.0 20 −100 0 −200 IC (mA) 0.5 −300 VCE = −10 V. DC current gain as a function of collector current; typical values. Fig.5 MRA605 5 handbook, halfpage Ccb (pF) 4 3 2 −5 0 −10 −15 −20 −25 −30 −35 VCB (V) IC = 0; f = 1 MHz. Fig.6 Collector-base capacitance as a function of collector-base voltage; typical values. 1997 Oct 02 −50 −100 IC (mA) −150 VCE = −10 V; Tamb = 25 °C. Fig.4 1 0 5 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification PNP video transistors BFQ256; BFQ256A PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1997 Oct 02 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PNP video transistors BFQ256; BFQ256A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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