DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD7100 High-speed double diode Product specification 2003 Nov 07 Philips Semiconductors Product specification High-speed double diode PMBD7100 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns 1 anode (a1) • Continuous reverse voltage: max. 100 V 2 anode (a2) • Repetitive peak reverse voltage: max. 100 V 3 common connection • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching in thick and thin-film circuits. DESCRIPTION handbook, halfpage 3 3 The PMBD7100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 SMD plastic package. 1 1 MARKING Top view 2 MAM383 MARKING CODE(1) TYPE NUMBER PMBD7100 2 *3A Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMBD7100 2003 Nov 07 − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 Philips Semiconductors Product specification High-speed double diode PMBD7100 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current − 100 V − 100 V single diode loaded; see Fig.2; note 1 − 215 mA double diode loaded; see Fig.2; note 1 − 125 mA − 450 mA tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A − 250 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 2003 Nov 07 3 Philips Semiconductors Product specification High-speed double diode PMBD7100 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 25 V 30 nA VR = 100 V 2.5 µA VR = 25 V; Tj = 150 °C 60 µA VR = 100 V; Tj = 150 °C 100 µA see Fig.5 Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA to tr = 20 nA; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2003 Nov 07 4 VALUE UNIT 360 K/W 500 K/W Philips Semiconductors Product specification High-speed double diode PMBD7100 GRAPHICAL DATA MBD033 300 MDB820 300 F (mA) 250 handbook, halfpage I IF (mA) 200 200 single diode loaded 150 double diode loaded 100 100 (1) (2) (3) 50 0 0 100 T amb ( oC) 0 200 0 1.0 1.5 V (V) 2.0 F (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0.5 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Nov 07 5 104 Philips Semiconductors Product specification High-speed double diode PMBD7100 MDB821 102 handbook, halfpage MDB822 0.8 handbook, halfpage IR (µA) Cd (pF) (1) 10 0.6 (2) 1 (3) 0.4 10-1 0.2 10-2 10−3 0 50 100 0 150 T (°C) 200 j 0 5 (1) VR = 100 °C; maximum values. (2) VR = 100 °C; typical values. (3) VR = 25 °C; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 Nov 07 6 10 VR (V) 15 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode PMBD7100 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Nov 07 7 t tp output signal Philips Semiconductors Product specification High-speed double diode PMBD7100 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Nov 07 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 8 Philips Semiconductors Product specification High-speed double diode PMBD7100 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Nov 07 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp10 Date of release: 2003 Nov 07 Document order number: 9397 750 12001