Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS®-P2 Power-Transistor Product Summary V DS -40 V R DS(on) (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80P04P4L-06 PG-TO263-3-2 4P04L06 IPI80P04P4L-06 PG-TO262-3-1 4P04L06 IPP80P04P4L-06 PG-TO220-3-1 4P04L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Value -80 Unit A -68 Pulsed drain current2) I D,pulse T C=25°C -320 Avalanche energy, single pulse E AS I D=-40A 31 mJ Avalanche current, single pulse I AS - -80 A Gate source voltage V GS - ±163) V Power dissipation P tot T C=25 °C 88 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.7 Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area4) - - 40 -40 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA Gate threshold voltage V GS(th) V DS=V GS, I D=-150µA -1.2 -1.7 -2.2 Zero gate voltage drain current I DSS V DS=-32V, V GS=0V, T j=25°C - -0.05 -1 - -20 -200 V DS=-32V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=-16V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-50A - 8.2 10.8 mW V GS=-4.5V, I D=-50A, SMD version - 7.9 10.5 V GS=-10V, I D=-80A - 5.8 6.7 V GS=-10V, I D=-80A, SMD version - 5.5 6.4 Rev. 1.0 page 2 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Parameter Symbol Values Conditions Unit min. typ. max. - 5060 6580 - 1520 2280 Dynamic characteristics2) pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 60 120 Turn-on delay time t d(on) - 17 - Rise time tr - 12 - Turn-off delay time t d(off) - 61 - Fall time tf - 44 - Gate to source charge Q gs - 19 25 Gate to drain charge Q gd - 13 26 Gate charge total Qg - 80 104 Gate plateau voltage V plateau - 3.6 - V - - -80 A - - -320 - -1 -1.3 V - 56 - ns - 64 - nC V GS=0V, V DS=-25V, f =1MHz V DD=-20V, V GS=-10V, I D=-80A, R G=3.5W ns Gate Charge Characteristics2) V DD=-32V, I D=-80A, V GS=0 to -10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25°C V GS=0V, I F=-80A, T j=25°C V R=-20V, I F=-50A, di F/dt =-100A/µs 1) Current is limited by bondwire; with an R thJC = 1.7K/W the chip is able to carry -96A at 25°C. 2) Defined by design. Not subject to production test. 3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V; SMD 100 80 80 60 60 -I D [A] P tot [W] 100 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 1000 1 µs 100 0.5 10 µs 100 Z thJC [K/W] -I D [A] 100 µs 1 ms 0.1 -1 10 0.05 0.01 10 10-2 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] -V DS [V] Rev. 1.0 single pulse page 4 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 25 320 -10V -3.5V -3.2V -3V -5V 20 240 R DS(on) [mW] -I D [A] -4.5V 160 15 -4V 10 -4V -4.5V -5V -7V 80 -10V 5 -3.5V -3V -2.8V 0 0 1 2 3 4 5 0 0 6 40 -V DS [V] 80 -I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD parameter: T j 320 9 25 °C -55 °C 175 °C 8 R DS(on) [mW] -I D [A] 240 160 7 6 80 5 4 0 2 3 4 5 6 7 8 -20 20 60 100 140 180 T j [°C] -V GS [V] Rev. 1.0 -60 page 5 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.4 Ciss 2 Coss 103 1.6 C [pF] -V GS(th) [V] -1500µA -150µA 102 1.2 Crss 101 0.8 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 140 180 -V DS [V] 11 Typical forward diode characteristicis 12 Drain-source breakdown voltage IF = f(VSD) V BR(DSS) = f(T j); I D = -1 mA parameter: T j 103 45 44 43 42 -I F [A] -V BR(DSS) [V] 102 175 °C 1 25 °C 10 41 40 39 38 37 36 100 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD [V] Rev. 1.0 -60 -20 20 60 100 T j [°C] page 6 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 13 Typ. gate charge 14 Gate charge waveforms V GS = f(Q gate); I D = -80 A pulsed parameter: V DD 12 V GS 10 Qg -8V -32V -V GS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 20 40 60 80 Q gate [nC] Rev. 1.0 page 7 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2011 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Revision History Date Version Rev. 1.0 Changes 0.1 08.03.2010 Initial Target Data Sheet 1.0 03.02.2011 Final Data Sheet page 9 2011-02-14