BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features n TrenchMOS technology n 175 °C rated n Q101 compliant n Standard level compatible 1.3 Applications n Automotive systems n Motors, lamps and solenoids n General purpose power switching n 12 V, 24 V and 42 V loads 1.4 Quick reference data n EDS(AL)S ≤ 630 mJ n ID ≤ 100 A n RDSon = 3.7 mΩ (typ) n Ptot ≤ 333 W 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain Simplified outline mb Symbol mb D G mbb076 1 2 3 1 2 3 SOT78 (TO-220AB) SOT226 (I2PAK) S BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUK754R3-75C SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BUK7E4R3-75C I2PAK plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage VDGR drain-gate voltage (DC) VGS gate-source voltage ID drain current Conditions RGS = 20 kΩ Min Max Unit - 75 V - 75 V - ±20 V [1] VGS = 10 V; see Figure 2 and 3 limited by power dissipation at Tmb = 25 °C [2] - 192 A limited by package at Tmb = 25 °C [3] - 100 A limited by package at Tmb = 100 °C [3] - 100 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 769 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 333 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode reverse drain current IDR IDRM peak reverse drain current Tmb = 25 °C [1] limited by power dissipation [2] - 192 A limited by package [3] - 100 A Tmb = 25 °C; pulsed; tp ≤ 10 µs - 769 A unclamped inductive load; ID = 100 A; VDS ≤ 75 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C - 630 mJ - - mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [4] EDS(AL)R repetitive drain-source avalanche energy [1] Refer to document 9397 750 12572 for further information. [2] Current is limited by chip power dissipation rating. [3] Continuous current is limited by package. [4] Conditions: a) Maximum value not quoted. Repetitive rating defined in Figure 16. b) Single-pulse avalanche rating limited by Tj(max) of 175 °C. c) Repetitive avalanche rating limited by an average junction temperature of 170 °C. d) Refer to application note AN10273 for further information. BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 2 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET 03aa16 120 003aab376 200 ID (A) Pder (%) 150 80 100 (1) 40 50 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ------------------------ × 100 % P tot ( 25°C ) (1) Capped at 100 A due to package. Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature 003aab393 103 tp = 10 µs Limit RDSon = VDS / ID ID (A) 102 (1) 100 µs 10 1 ms 10 ms 1 10-1 10-1 DC 100 ms 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. (1) Capped at 100 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 3 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.45 K/W SOT78 vertical in free air - 60 - K/W SOT226 vertical in free air - 50 - K/W 003aab340 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 4 of 13 Philips Semiconductors BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 75 - - V Tj = −55 °C 70 - - V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.02 1 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 3.7 4.3 mΩ Tj = 175 °C - - 9 mΩ - 142 - nC - 36 - nC - 67 - nC - 5 - V - 8744 11659 pF - 923 1108 pF - 579 793 pF - 61 - ns - 100 - ns Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage gate-source threshold voltage drain leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; see Figure 9 and 10 VDS = 75 V; VGS = 0 V IGSS gate leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8 Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge VGS(pl) gate-source plateau voltage Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance ID = 25 A; VDD = 60 V; VGS = 10 V; see Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω td(on) turn-on delay time tr rise time td(off) turn-off delay time - 194 - ns tf fall time - 90 - ns LD internal drain inductance from drain lead 6 mm from package to center of die - 4.5 - nH from contact screw on mounting base to center of die - 3.5 - nH from upper edge of drain mounting base to center of die SOT226 - 2.5 - nH from source lead to source bonding pad - 7.5 - nH LS internal source inductance BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 5 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET Table 5. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 15 - 0.85 1.2 V trr reverse recovery time 83 - ns recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 25 V - Qr - 155 - nC 003aab377 200 ID (A) RDSon (mΩ) 20 10 8 150 003aab378 12 6 8 5.5 100 6 50 5 4 VGS (V) = 4.5 0 2 0 2 4 6 8 VDS (V) 10 5 Tj = 25 °C 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 003aab379 8 Fig 6. Drain source on-state resistance as a function of gate-source voltage; typical values 03aa28 2.4 a RDSon (mΩ) VGS (V) = 5.5 1.8 6 6 1.2 8 4 10 0.6 20 2 0 70 140 ID (A) 210 ID = 1 mA; VDS = VGS 0 -60 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature BUK75_7E4R3-75C_1 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 6 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 2 min 10−2 max typ 10−3 min 10−4 typ max 10−5 1 0 −60 0 60 120 180 10−6 0 Tj (°C) 2 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 003aab380 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab381 16000 C (pF) gfs (S) Ciss 12000 120 8000 Coss 60 4000 0 0 75 150 ID (A) 225 Tj = 25 °C; VDS = 25 V 0 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK75_7E4R3-75C_1 Product data sheet Crss © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 7 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET 003aab382 200 003aab383 10 VGS (V) 8 ID (A) VDS = 14 V VDS = 60 V 6 100 Tj = 25 °C 4 2 Tj = 175 °C 0 0 0 2 4 6 0 VGS (V) 8 50 100 150 QG (nC) 200 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aab384 250 IS (A) Fig 14. Gate-source voltage as a function of gate charge; typical values 003aab385 103 IAL (A) 200 102 (1) 150 100 (2) 10 Tj = 175 °C 50 Tj = 25 °C (3) 0 0 0.5 1 1.5 VSD (V) 2 VGS = 0 V 1 10-3 10-2 10-1 1 tAL (ms) 10 See Table note 4 of Table 3 “Limiting values”. (1) Single-pulse; Tj = 25 °C. (2) Single-pulse; Tj = 150 °C. (3) Repetitive. Fig 15. Source current as a function of source-drain voltage; typical values Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 8 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 L2 max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.45 1.00 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 05-03-22 05-10-25 Fig 17. Package outline SOT78 (TO-220AB) BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 9 of 13 BUK754R3-75C; BUK7E4R3-75C Philips Semiconductors N-channel TrenchMOS standard level FET Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 A A1 E D1 mounting base D L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D max D1 E e L L1 Q mm 4.5 4.1 1.40 1.27 0.85 0.60 1.3 1.0 0.7 0.4 11 1.6 1.2 10.3 9.7 2.54 15.0 13.5 3.30 2.79 2.6 2.2 OUTLINE VERSION SOT226 REFERENCES IEC JEDEC JEITA low-profile 3-lead TO-220AB EUROPEAN PROJECTION ISSUE DATE 05-06-23 06-02-14 Fig 18. Package outline SOT226 (I2PAK) BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 10 of 13 Philips Semiconductors BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK75_7E4R3-75C_1 20060810 Product data sheet - - BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 11 of 13 Philips Semiconductors BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 10. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BUK75_7E4R3-75C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 August 2006 12 of 13 Philips Semiconductors BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: [email protected]. Date of release: 10 August 2006 Document identifier: BUK75_7E4R3-75C_1