PHILIPS BR211-260

Philips Semiconductors
Product specification
Breakover diodes
GENERAL DESCRIPTION
BR211 series
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed, glass envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
capability.
Typical
applications
include
transient
overvoltage
protection
in
telecommunications equipment.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V(BO)
IH
ITSM
BR211-140 to 280
Breakover voltage
Holding current
Non-repetitive peak current
140
150
-
280
40
V
mA
A
OUTLINE - SOD84
SYMBOL
BR211-XXX
XXX denotes voltage grade
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VD
Continuous voltage
ITSM1
Non repetitive peak current
ITSM2
Non repetitive on-state current
I2t
dIT/dt
I2t for fusing
Rate of rise of on-state current
after V(BO) turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
Ptot
PTM
Tstg
Ta
Tvj
August 1996
CONDITIONS
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
tp = 10 µs
Ta = 25˚C
tp = 1 ms; Ta = 25˚C
off-state
on-state
1
MIN.
MAX.
UNIT
-
V
-
75% of
V(BO)typ
40
-
15
A
-
1.1
50
A2s
A/µs
-65
-
1.2
50
150
70
150
W
W
˚C
˚C
˚C
A
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-e
Thermal resistance junction to
envelope
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
Thermal resistance envelope to
tie point
Thermal resistance envelope to
ambient
Thermal resistance tie point to
ambient
Rth j-a
Zth j-a
Rth e-tp
Rth e-a
Rth tp-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
22
-
K/W
mounted as fig:12
-
105
tp = 1 ms
-
2.62
-
K/W
lead length = 5 mm
lead length = 10 mm
lead length = 5 mm
lead length = 10 mm
mounted as fig:12
mounted with 1 cm2 copper
laminate per lead.
mounted with 2.25 cm2 copper
laminate per lead
-
15
30
440
350
70
55
-
K/W
K/W
K/W
K/W
K/W
K/W
-
45
-
K/W
MIN.
TYP.
MAX.
UNIT
-
-
2.5
V
123
140
158
176
193
211
228
246
140
160
180
200
220
240
260
280
157
180
202
224
247
269
292
314
150
100
10
-
+0.1
200
-
1000
10
V
V
V
V
V
V
V
V
V
V
%/K
mA
mA
mA
µA
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
V
V(BR)
V(BO)
On-state voltage
Avalanche voltage (min)
Breakover voltage (max)
ITM = 2 A
I(BR) = 10mA
I ≤ IS, tp = 100 µs
BR211-140
BR211-160
BR211-180
BR211-200
BR211-220
BR211-240
BR211-260
BR211-280
S(br)
IH2
Temperature coefficient of V(BR)
Holding current
Tj = 25˚C
Tj = 70˚C
Switching current
tp = 100 µs
Off-state current
VD = 85% V(BR)min, Tj = 70˚C
1
TM
IS3
ID4
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative
humidity < 65%.
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
dVD/dt
Linear rate of rise of off-state
voltage that will not trigger any
device
Off-state capacitance
Cj
MIN.
TYP.
MAX.
UNIT
V(DM) = 85% V(BR)min; Tj = 70 ˚C
-
-
2000
V/µs
VD = 0 V; f = 1 kHz to 1 MHz
-
-
100
pF
VT
current
20
BR211
ITSM / A
IT
I
ITSM2
15
time
IS
V(BR)
IH
ID
V(BO)
I(BR)
VD
10
voltage
5
0
Symbol
Symmetric BOD
1
100
Number of impulses
1000
10000
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
Fig.1. Definition of breakover diode characteristics.
current
1.06
ITSM
100%
90%
10
V(BR)(Tj)
V(BR)(25 C)
1.04
1.02
1.00
50%
0.98
0.96
30%
0.94
0.92
0
0.90
time
10us
-40
700us
Fig.2. Test waveform for high voltage impulse (ITSM1)
according to CCITT vol IX-Rec K17.
August 1996
-20
0
20
40
Tj / C
60
80
100
Fig.4. Normalised avalanche breakdown voltage V(BR)
and V(BO) as a function of temperature.
3
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
20
BR211 series
IT / A
10 IH / A
Tj = 25 C
Tj = 150 C
1
15
max
typ
10
min
0.1
0.01
5
0
1
2
VT / V
0.001
-50
4
3
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
50
Tj / C
0
Fig.8. Minimum holding current as a function of
temperature.
100 ID / uA
100
Cj / pF
max
10
150
100
BR211-140
typ
BR211-280
10
1
0.1
-40
-20
0
20
40
Tj / C
60
80
1
1
100
10
1000
100
VD / V
Fig.6. Maximum off-state current as a function of
temperature.
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
10 IS / A
1000
1
BR211
Zth / (K/W)
100
max
typ
10
0.1
0.01
PD
1
min
tp
t
0.001
-50
0
50
Tj / C
100
0.1
10us
150
0.1s
10s
1000s
tp / s
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
Fig.7. Switching current as a function of junction
temperature.
August 1996
1ms
4
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
junction
50
Rth j-e
envelope
50
Rth e-tp
tie-point
Rth e-a
7
Rth tp-a
2
25
3
ambient
Fig.11. Components of thermal resistance,
Rth j − a = Rth j − e +
August 1996
Fig.12. Mounting on pcb used for Rth measurement.
Rthe − a.(Rthe − tp + Rthtp − a)
(Rthe − a + Rthe − tp + Rthtp − a)
5
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
MECHANICAL DATA
Dimensions in mm
5
max
0.81
max
3.15
max
28
min
4.3
max
28
min
Fig.13. SOD84.
August 1996
6
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
7
Rev 1.200