Philips Semiconductors Product specification Breakover diodes GENERAL DESCRIPTION BR211 series QUICK REFERENCE DATA A range of bidirectional, breakover diodes in an axial, hermetically sealed, glass envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical applications include transient overvoltage protection in telecommunications equipment. SYMBOL PARAMETER MIN. MAX. UNIT V(BO) IH ITSM BR211-140 to 280 Breakover voltage Holding current Non-repetitive peak current 140 150 - 280 40 V mA A OUTLINE - SOD84 SYMBOL BR211-XXX XXX denotes voltage grade LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VD Continuous voltage ITSM1 Non repetitive peak current ITSM2 Non repetitive on-state current I2t dIT/dt I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation Peak dissipation Storage temperature Operating ambient temperature Overload junction temperature Ptot PTM Tstg Ta Tvj August 1996 CONDITIONS 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state 1 MIN. MAX. UNIT - V - 75% of V(BO)typ 40 - 15 A - 1.1 50 A2s A/µs -65 - 1.2 50 150 70 150 W W ˚C ˚C ˚C A Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-e Thermal resistance junction to envelope Thermal resistance junction to ambient Thermal impedance junction to ambient Thermal resistance envelope to tie point Thermal resistance envelope to ambient Thermal resistance tie point to ambient Rth j-a Zth j-a Rth e-tp Rth e-a Rth tp-a CONDITIONS MIN. TYP. MAX. UNIT - 22 - K/W mounted as fig:12 - 105 tp = 1 ms - 2.62 - K/W lead length = 5 mm lead length = 10 mm lead length = 5 mm lead length = 10 mm mounted as fig:12 mounted with 1 cm2 copper laminate per lead. mounted with 2.25 cm2 copper laminate per lead - 15 30 440 350 70 55 - K/W K/W K/W K/W K/W K/W - 45 - K/W MIN. TYP. MAX. UNIT - - 2.5 V 123 140 158 176 193 211 228 246 140 160 180 200 220 240 260 280 157 180 202 224 247 269 292 314 150 100 10 - +0.1 200 - 1000 10 V V V V V V V V V V %/K mA mA mA µA K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS V V(BR) V(BO) On-state voltage Avalanche voltage (min) Breakover voltage (max) ITM = 2 A I(BR) = 10mA I ≤ IS, tp = 100 µs BR211-140 BR211-160 BR211-180 BR211-200 BR211-220 BR211-240 BR211-260 BR211-280 S(br) IH2 Temperature coefficient of V(BR) Holding current Tj = 25˚C Tj = 70˚C Switching current tp = 100 µs Off-state current VD = 85% V(BR)min, Tj = 70˚C 1 TM IS3 ID4 1 Measured under pulsed conditions to avoid excessive dissipation 2 The minimum current at which the diode will remain in the on-state 3 The avalanche current required to switch the diode to the on-state 4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative humidity < 65%. August 1996 2 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Linear rate of rise of off-state voltage that will not trigger any device Off-state capacitance Cj MIN. TYP. MAX. UNIT V(DM) = 85% V(BR)min; Tj = 70 ˚C - - 2000 V/µs VD = 0 V; f = 1 kHz to 1 MHz - - 100 pF VT current 20 BR211 ITSM / A IT I ITSM2 15 time IS V(BR) IH ID V(BO) I(BR) VD 10 voltage 5 0 Symbol Symmetric BOD 1 100 Number of impulses 1000 10000 Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; Tj = 70˚C prior to surge. Fig.1. Definition of breakover diode characteristics. current 1.06 ITSM 100% 90% 10 V(BR)(Tj) V(BR)(25 C) 1.04 1.02 1.00 50% 0.98 0.96 30% 0.94 0.92 0 0.90 time 10us -40 700us Fig.2. Test waveform for high voltage impulse (ITSM1) according to CCITT vol IX-Rec K17. August 1996 -20 0 20 40 Tj / C 60 80 100 Fig.4. Normalised avalanche breakdown voltage V(BR) and V(BO) as a function of temperature. 3 Rev 1.200 Philips Semiconductors Product specification Breakover diodes 20 BR211 series IT / A 10 IH / A Tj = 25 C Tj = 150 C 1 15 max typ 10 min 0.1 0.01 5 0 1 2 VT / V 0.001 -50 4 3 Fig.5. On-state current as a function of on-state voltage; tp = 200 µs to avoid excessive dissipation. 50 Tj / C 0 Fig.8. Minimum holding current as a function of temperature. 100 ID / uA 100 Cj / pF max 10 150 100 BR211-140 typ BR211-280 10 1 0.1 -40 -20 0 20 40 Tj / C 60 80 1 1 100 10 1000 100 VD / V Fig.6. Maximum off-state current as a function of temperature. Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; Tj = 25˚C. 10 IS / A 1000 1 BR211 Zth / (K/W) 100 max typ 10 0.1 0.01 PD 1 min tp t 0.001 -50 0 50 Tj / C 100 0.1 10us 150 0.1s 10s 1000s tp / s Fig.10. Transient thermal impedance. Zth j-a = f(tp). Fig.7. Switching current as a function of junction temperature. August 1996 1ms 4 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series junction 50 Rth j-e envelope 50 Rth e-tp tie-point Rth e-a 7 Rth tp-a 2 25 3 ambient Fig.11. Components of thermal resistance, Rth j − a = Rth j − e + August 1996 Fig.12. Mounting on pcb used for Rth measurement. Rthe − a.(Rthe − tp + Rthtp − a) (Rthe − a + Rthe − tp + Rthtp − a) 5 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series MECHANICAL DATA Dimensions in mm 5 max 0.81 max 3.15 max 28 min 4.3 max 28 min Fig.13. SOD84. August 1996 6 Rev 1.200 Philips Semiconductors Product specification Breakover diodes BR211 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 7 Rev 1.200