Order this document by MMT10V275/D SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices High Voltage Bidirectional TVS Devices BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE These transient voltage suppression (TVS) devices prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover–triggered crowbar protectors. Turn–off occurs when the surge current falls below the holding current value. Applications include current loop lines in telephony and control systems, central office stations, repeaters, building and residence entrance terminals and electronic telecom equipment. • High Surge Current Capability • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non–Semiconductor Devices • Fail–Safe. Shorts When Overstressed, Preventing Continued Unprotected Operation. CASE 416A–01 DEVICE RATINGS: – 40°C to 50°C for MMT10V275 – 40°C to 65°C for MMT10V400 (except surge) Parameter Symbol Peak Repetitive Off–State Voltage — Maximum Value VDM Volts ± 200 ± 265 MMT10V275 MMT10V400 On–State Surge Current — Maximum Nonrepetitive (MMT10V400 – 20°C to 65°C) 10 x 1000 µs exponential wave, Notes 1, 2, 3 60 Hz ac, 1000 V(rms), RS = 1.0 kΩ, 1 second 60 Hz ac, 480 V(rms), RS = 48 Ω, 2 seconds Unit ITSM1 ISTM2 ISTM3 ± 100 ± 10 ± 1.0 A(pk) A(rms) A(rms) di/dt 50 A/µs Operating Temperature Range Blocking or Conducting State TJ1 – 40 to + 125 °C Overload Junction Temperature — Maximum Conducting State Only TJ2 + 175 °C RθJC 1.5 °C/W — + 200 °C/W Rate of Change of On–State Current — Maximum Nonrepetitive Critical Damped Wave, C = 1.2 µF, L = 16 µH, R = 7.4, VCI = 1000 V, I(pk) = 100 A (short circuit), 0 to 50% I (pk) DEVICE THERMAL RATINGS Thermal Resistance, Junction to Case — Maximum Thermal Resistance, Case to Ambient, Without Heatsink This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristics Breakover Voltage (dv/dt = 100 V/µs, ISC = 10 A, Vdc = 1000 V) Symbol Min Typ Max V(BO)1 MMT10V275 MMT10V400 Unit Volts — — — — 275 400 — — — — 275 400 — 0.05 — 200 265 — — — — dV(BO)/dTJ — 0.11 — Off State Current (VD = 160 V) ID — — 3.0 µA On–State Voltage (IT = 10 A) (PW ≤ 300 µs, Duty Cycle ≤ 2%, Note 2) VT — 3.0 4.0 Volts Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) IBO — 500 — mA IH — 400 — mA dv/dt 2000 — — V/µs CO — 55 — pF Breakover Voltage (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kΩ, t = 0.5 cycle, Note 2) V(BO)2 MMT10V275 MMT10V400 Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) dV(BO)/dTJ Volts V(BR) MMT10V275 MMT10V400 Breakdown Voltage Temperature Coefficient Holding Current Note 2 (10 x 100 Ms exponential wave, IT = 10 A, V = 52 V, RS = 200 Ω) Critical Rate of Rise of Off–State Voltage (Linear waveform, VD = 0.8 x Rated VDRM, TJ = 125°C) Capacitance (f = 1.0 MHz, 50 V, 15 mV) %/°C Volts %/°C 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. 3. Requires θCS ≤ 6°C/W each side, infinite heatsink. RθS(A1) RθC(S1) RθJ(C1) TA TS1 TC1 RθJ(C2) TJ RθC(S2) RθS(A2) TC2 TS2 TA PD Terms in the model signify: TA = Ambient Temp. TS = Heatsink Temp. TC = Case Temp. TJ = Junction Temp. RθSA = Thermal Resistance, Heatsink to Ambient RθCS = Thermal Resistance, Case to Heatsink RθJC = Thermal Resistance, Junction to Case PD = Power Dissipation Subscripts 1 and 2 denote the device terminals, MT1 and MT2, respectively. Thermal resistance values are: RθCS = 6°C/W maximum (each side) RθJC = 3°C/W maximum (each side) The RθCS values are estimates for dry mounting with heatsinks contacting the raised pedestal on the package. For minimum thermal resistance, the device should be sandwiched between clean, flat, smooth conducting electrodes and securely held in place with a compressive force of 2 pounds maximum. The electrodes should contact the entire pedestal area. When the device is mounted symmetrically, the thermal resistances are identical. The values for RθSA and RθCS are controlled by the user and depend on heatsink design and mounting conditions. Figure 1. Thermal Circuit, Device Mounted Between Heatsinks 2 Motorola Thyristor Device Data 0 ∆ I H , HOLDING CURRENT TEMPERATURE COEFFICIENT (mA/ °C) 600 I H, HOLDING CURRENT (mA) 550 500 450 400 350 300 250 200 0 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (°C) 70 I BO, NORMALIZED BREAKOVER CURRENT NORMALIZED BREAKOVER VOLTAGE The thermal coefficient of VF(BR) is similar to that of a zener diode. I BO falls with temperature, reducing the zener impedance contribution to V BO. This causes the V BO temperature coefficient perature to be less than or equal to the VF(BR) coefficient. The graph allows the estimation of the maximum voltage rise of either parameter. 1.05 1 NORMALIZED TO 25°C 0.95 0.9 – 20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 Figure 4. Normalized Maximum 60 Hz VBO versus Junction Temperature Motorola Thyristor Device Data TYPICAL LOW –3 250 300 350 400 450 500 IH, HOLDING CURRENT AT 0°C (mA) 550 600 Figure 3. Holding Current Temperature Coefficient 1.2 1.1 TYPICAL –2 –4 200 80 Figure 2. Typical Holding Current 1.15 –1 140 10 Note: The behavior of the breakover current during AC operation is complex, due to junction heating, case heating and thermal interaction between the device halves. Microplasma conduction at the beginning of breakdown sometimes results in higher local current densities and earlier than predicted switching. This reduces power dissipation and stress on the device. 1 0.1 – 40 MAXIMUM IBO = 1.0 A at 25°C FIRST HALF–CYCLE f = 60 Hz VOC = 1000 V (rms) IOC = 1.0 A (rms) MINIMUM IBO UNIT – 20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE PRIOR TO TEST (°C) 160 Figure 5. Temperature Dependence of 60 Hz Breakover Current 3 PACKAGE DIMENSIONS 0.0127 (0.0005) T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION M AND P MAXIMUM MISALIGNMENT OF HALFS. –T– M C NOTE 3 A P B N R NOTE 3 R N E DIM A B C E M N P R INCHES MIN MAX 0.110 0.120 0.110 0.120 0.072 0.080 0.006 0.010 ––– 4_ 0.073 0.077 ––– 0.130 0.065 0.070 MILLIMETERS MIN MAX 2.79 3.05 2.79 3.05 1.83 2.03 0.15 0.25 ––– 4_ 1.85 1.96 ––– 3.30 1.65 1.78 CASE 416A–01 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MMT10V275/D* MMT10V275/D